DATA SHEET

MOS FIELD EFFECT TRANSISTORS

2SK2941
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
This product is n-Chanel MOS Field Effect Transistor designed high current switching application. PACKAGE DIMENSIONS inmillimeters

3.00.3

FEATURE
Low On-Resistance RDS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A) RDS(on)2 = 22 m Typ. (VGS = 4 V, ID = 18 A) Low Ciss Ciss = 1250 pF Typ.

10.6 MAX. 3.60.2 10.0

5.9 MIN. 12.7 MIN. 15.5 MAX.

4.8 MAX. 1.30.2

4 1 2 3 1.30.2

6.0 MAX.

Built-in G-S Protection Diode

0.50.2 2.80.2

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Maximum Voltages and Currents Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)* Maximum Power Dissipation Total Power Dissipation (TA = 25 C) Total Power Dissipation (TC = 25 C) Maximum Temperature Channel Temperature Storage Temperature * PW 10 s, Duty Cycle 1% Tch Tstg 150 55 to + 125 C C PT PT 1.5 60 W W VDSS VGSS ID(DC) ID(Pulse) 30 20 35 140 V V A A

0.750.1 2.54 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220)

Drain

Gate

Dody Diode

Gate Protection Diode Source

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exeeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Document No. D11007EJ1V0DS00 (1st edition) Date Published May 1997 N

1997

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ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBLO RDS(on)1 RDS(on)2 VGS(off) I yfs I IDDS IGSS Ciss Coss Crss td(on) tr td(off) tr QG QGS QGD VF(S-D) trr Qrr 1250 900 460 40 430 160 220 50 4.5 21 1.0 65 90 1.0 8.0 MIN. TYP. 14 22 1.5 25 10 10 MAX. 20 33 2.0 UNIT m m V S TEST CONDITION VGS = 10 V, ID = 18 A VGS = 4 V, ID = 18 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 18 A VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, VGS = 0, f =1 MHz

A A
pF pF pF ns ns ns ns nC nC nC V ns nC

ID = 18 A, VGS(on) = 10 V VDD = 15 V, RG = 10

ID = 35 A, VDD = 24 V, VGS = 10 V

IF = 35 A, VGS = 0 IF = 35 A, VGS = 0, di/dt = 100 A/s

Test Circuit 1 Switching Time

Test Circuit 2 Gate Charge

D.U.T. RL VGS PG RG RG = 10
Wave Form

VGS 0 ID 10 % VGS(on)

D.U.T. IG = 2 mA 90 % PG 50

RL VDD

VDD 90 % ID
Wave Form

VGS 0 t t = 1 s Duty Cycle 1 % 0

90 % ID 10 % tf toff

10 % td(on) ton

tr td(off)

2SK2941
ELECTRICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W PT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

100 80 60 40 20

100 80 60 40 20

20

40 60 80 100 120 140 160 TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE

20

40 60 80 100 120 140 160 TC - Case Temperature - C

FORWARD BIAS SAFE OPERATING AREA 1000 Tc = 25 C Single Pulse ID(Pulse) 100 ID(DC)
10

200

Pulsed

160 ID - Drain Current - A VGS = 10 V ID - Drain Current - A 120

PW
10 m

=
s

1m

80 40 VGS = 4 V

10

DC

s
20

0.5 1.0 1.5 VDS - Drain to Source Voltage - V

0.1

1 10 VDS - Drain to Source Voltage - V

100

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000

rth(t) - Transient Thermal Resistance - C/W

Rth(ch-a) = 83.3 (C/W) 100

10 Rth(ch-c) = 2.08 (C/W) 1 Single Pulse Tc = 25 C 0.1 1m 10m 100m 1 10 100 1 000 10 000

PW - Pulse Width - s

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VGS(off) - Gate to Source Cutoff Voltage - V

2.0 VDS = 10 V ID = 1 mA 1.5

RDS(on) - Drain to Source On - State resistance - m

GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE

DRAIN TO SOURCE ON - STATE RESISTANCE vs. DRAIN CURRENT 30 VGS = 4 V 20

1.0

VGS = 10 V 10

0.5

50 0 50 100 T ch - Channel Temperature - C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

150

10 100 ID - Drain Current - A

RDS(on) - Drain to Source On - State Resistance - m

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 100 ID = 7 A 18 A 35 A

100
|yfs| - Forward Transfer Admittance - S

TA = 25 C 25 C 75 C 125 C 10

V DS= 10 V Pulsed

50

10

100

1000

ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 1000 VDS = 10 V Pulsed TA = 25 C 25 C 75 C 125 C 10 000
Ciss, Coss, Crss - Capacitance - pF

5 10 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

VGS = 0 f =1 MHz

ID - Drain Current - A

100

1000

Ciss

Coss Crss 100

10

5 VGS - Gate to Source Voltage - V

10

10 0.1

1 10 VDS - Drain to Source Voltage - V

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SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

1000

1000

SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed

ISD - Diode Dorward Current - A

tr tf t d(off) 100 t d(on)

100 VGS = 4V 10 VGS = 0V

10
VDD = 15 V VGS =10 V Rin =10

1.0

1 0.1 1 10 I D - Drain Current - A

100

0.1 0

0.8 1.2 1.6 2.0 0.4 VSD - Source to Drain Voltage - V

2.4

RDS(on) - Drain to Source On - State Resistance - m

DRAIN TO SOURCE ON-RESISTANCE vs. CHANNEL TEMPERATURE

DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 35 A VGS VDD = 24 V 15 V 6V 16

VDS - Drain to Source Voltage - V

100 80 60 40 20 0 VGS = 4 V

30

12 10 8 6

20

10 VDS 0 20 40 60 Q g - Gate Charge - nC 80

4 2 0

VGS = 10 V

50 0 50 100 150 T ch - Channel Temperature - C

REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000

di/dt = 100 A/s VGS = 0

trr - Reverse Recovery Diode - ns

100

10

1 0.1

10

100

I D - Drain Current - A

VGS - Gate to Source Voltage - V

ID = 18 A Pulsed

14

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ELECTRICAL REFERENCE (TA = 25 C)
Ducument Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Application circuits using Power MOS FET Safe operating area of Power MOS FET Ducument No. C11745E C11531E C10535E C10943X MEI-1202 TEA-1035 TEA-1037

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[MEMO]

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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5