MV AC Drive Topology Analysis 1143643595

Medium Voltage AC Drive Topology
Comparisons & Feature-Benefits
TM GE AUTOMATION SYSTEMS
Typical AC Inverter System

Transformation
AC TO DC
OR OR OR OR
Conversion
DC TO AC
Utilization
Load
AC MOTOR
Utility Supply
RECTIFICATION
ENERGY STORAGE
SWITCHING
AC Inverter Technology Up To 97% Efficiency, including transformers
05-31-05
Copyright & Proprietary to TM GE Automation Systems
AC Drive Topology:
A map-like diagram showing the elements of an AC drive and the relationships between them.
Two Basic AC Drive Topologies

Current source drive: ENERGY STORAGE section between converter and inverter consists of an inductor. Voltage Source Drive: ENERGY STORAGE section between converter and inverter consists of capacitors.
05-31-05 Copyright & Proprietary to TM GE Automation Systems 3
Evolution of Power Devices

Leads the pace of AC drive development
The Common Threads:

Advances in All AC Drives rectify AC to DC Power All AC Drives use switches to create Semiconductor AC from DC Technology Lead the Way in Drive topologies were created as power rectifiers and switches grew MV Drive in ratings and capabilities. Development
Each new or uprated device opens up new applications A quick look at the device development timeline is useful
Development Time Line of Power Semiconductors

Transistor Devices
Bipolar Power Transistor Low Voltage Insulated Gate Bipolar Transistor Medium Voltage Insulated Gate Bipolar Transistor Injection Enhanced Gate Transistor
(BPT)
(LV IGBT)
(MV IGBT)
(IEGT)
1955
1965 Silicon Controlled Rectifier (SCR)
1975
1985 Gate Turn Off Thyristor (GTO)
1995 Integrated Gate Commutated Thyristor (IGCT)
2005 Symmetrical Gate Commutated Thyristor (SGCT)
Diode (D)
Thyristor Devices
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Device
Operation
Description
Silicon Diode Family of Devices
Diode and Thyristor Families of Devices
Diode
Conducts positive current
Thyristor Family of Devices

Silicon Controlled Rectifier (SCR) Gate current triggers the flow of positive current. After loss of gate signal, turns off the positive current at next zero cross over. Small positive gate signal turns on positive current, a large reverse gate turns off the positive current. A GTO w ith electronics for gate control integrated onto a printed circuit w rapped around the device. Blocks voltage in one direction.
Gate Turn Off Thyristor (GTO)
Integrated Gate Commutated Thyristor (IGCT)
Symmetrical Gate Commutated Thyristor (SGCT)
A GTO thyristor similar to the IGCT except that it blocks voltage in both directions.
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Device
Operation
Description
Transistor Family of Devices

Bipolar Power Transistor (BPT) Controls the flow of positive current with current injected into its base.
Transistor Family of Devices
Insulated Gate Bipolar Transistor (IGBT)
A hybrid device with very a high input resistance gate transistor providing current to turn it on.
Injection Enhanced Gate Transistor (IEGT)
A high-power advanced form of the IGBT with a very low onstate voltage and even lower losses than the thyristor.
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Power Device Comparison Detailed Overview
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Comparison Areas Comparison Areas for Drive Power Devices

Gate power to turn device on & off External circuitry [firing & protection]
Impact
Number of control devices & system reliability System efficiency & cooling Number of power devices, & system reliability Packaging & system Size
10
Switching speed, switching losses On-state forward drop and losses
Continuous current ratings Forward & reverse blocking voltage
Physical mounting & thermal characteristics

05-31-05 Copyright & Proprietary to TM GE Automation Systems
Comparing Gate Power of Devices - 1

Voltage
Current
Switching of GTO I gate

Voltage
Large Gate Current (800A)

Current
Switching of IGCT I gate
Faster Switching Speed
Brief but Very Large Gate Current (4000A)

Comparing Gate Power of Devices - 2

Voltage Current Quick Switching Speed Small Gate Power and Current (1.5A) Voltage Current Quick Switching Speed Small Gate Power and Current (1.5A)
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Switching of IGBT I gate
Switching of IEGT
I gate
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GTO Gate Driver & Cell Stack Equipment

1990s GE GTO-IMD Example
Isolation Transformer Gate Power Supply
Liquid-cooled configuration Many discrete parts in firing and auxiliary parts Snubber network also shown Physically quite large
4.5kV-4kA
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GCT Gate Driver Equipment

Covers on
Isolation Transformer Gate Power Supply
Integrated Gate Signal Unit
GCT
4.5kV-4kA
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Example GCT & Gate Driver Board

Covers off
4.5kV-4kA 4.5kV-800 A
36 Electrolytic caps 21 FET Switches

Typical IGBT & IGBT Gate Driver Circuit

IGBT
400 amp 3300 volt dual package Larger ratings have 1/package
Typical MV IGBT Dual Gate Driver

Each board has 2 drivers, & fires 2 IGBTs
2 in, 50 mm
Approximate Size: 4 inches x 4.5 inches
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IEGT Latest Generation Voltage Switched Power Device
IEGT = Injection Enhanced Gate Transistor Ratings to 4000 volts, 4500 amps Press pack or single sided Lower forward drop than IGBT, meaning higher power density, more efficiency.
IEGT Gate Driver Equipment

Gate Drive Board
IEGT
4.5kV-4kA
IEGT = Injection Enhanced Gate Transistor
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Reliability of R ates of IG C T vs Calculatedvs. GCT Current Fired [Electrolytic Type G ate D rivers IEG T C alculated FailureGate Drivers IEGT Voltage Fired Caps]
Failures per Billion Hours
3500 3000 2500 2000 1500

IC LE D F IL M C AP AC IT O R E L E C T R O L YT IC R E S IS T O R (1 /4 ) R E S IS T O R (P W R ) D IO D E FET
FITs
1000 500 0
T R AN S IS T O R
IG C T
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IE G T
Copyright & Proprietary to TM GE Automation Systems 19
Power Device Losses

Generally
Volts across device X Current Through Device = Power Lost in Device
Two Categories of Device Loss:

1. Losses During Turn-on & Turn-off Minimized by faster switching Equals area under volt-amp product curve 2. Losses during conduction Minimized by reducing device forward drop Equals device forward volts x amps
Power Device Losses

Forward amps Volts across device
Turn-off loss
Open Circuit volts
On-state volts
Turn-on loss
Conduction Losses
Power loss in device

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Example Power Device Switching Losses

Current Switched [IGCT] vs. Voltage Switched MV IGBT
DEVICE
Device rating
IGCT
750 AMP
IGBT
800 AMP
Turn On Joules Lost / pulse Turn-Off Joules Lost / pulse Total Switching Energy Joules Lost / Pulse
2.15 12 14.15
1.92 1.02 2.94
Almost 5:1 higher switching losses IGCT vs MV IGBT!

IGCT Rated Amps = 750 SOURCE: Mitsubishi FGC1500-130DS IGBT Rated Amps =800 SOURCE: EUPEC FZ 800 R33 KF2
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Example Power Device On-State Losses

IGCT vs MV IGBT
IGCT Rated Amps = 750 Forward Volts ~ 4.5 to 4.75 SOURCE: Mitsubishi FGC1500-130DS
IGBT Rated Amps =800 Fwd Volts ~ 3.35 to 4.25

SOURCE: EUPEC FZ 800 R33 KF2
750 amp IGCT Forward v = 4.5 - 4.75

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800 amp MV IGBT Forward v = 3.35 - 4.25

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Comparing Large Inverter Efficiencies: IEGT vs IGCT / SGCT vs GTO
[Less transformer]
High Efficiency from light load to rated load
Note: IGBT drive efficiencies typically equivalent to IEGT

Power Switch Voltage and Current Ratings

Continuous current ratings AFFECTS Forward & reverse blocking voltage Number of power devices, & system reliability
Higher device voltage ratings mean fewer devices are needed to match load voltage rating Higher current ratings mean fewer devices can be used without requiring paralleling
3 Level VFD Line-Line Output & Reference Sine Wave
PEAK RMS
1.08 1.0
Tradeoff: Using fewer, higher voltage-rated devices gives output waveform fewer levels with larger voltage change. For >4 kv drives, this requires 5 level 4000 volt Output 3 level 4000 volt Output No sine filter needed large output filters. Large sine filter needed As of March 2005: GCT: 4500 A, 6.0 kV IGBT: 1200 A, 4500 V IEGT: 4000 A, 4500 V
0.7
Red = 3-level PWM Voltage output

200 250 300 350
0.2
50
100
150
400
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Power Switching Devices

Final Comparisons & Conclusions Current switched devices [SGCT, IGCT] require many more parts in firing / gate control than voltage switched devices [IGBT, IEGT]. Voltage switched devices [IGBT, IEGT] have MUCH lower switching losses than current switched. Conduction losses are nearly equal for equivalent volt & amp-rated device SGCT, IGCT vs IGBT, IEGT Voltage switched devices allow higher switching rates and can give better output waveforms
Comparisons of Major Drive Type Topologies
Comparing Topologies
Current Source Drives
LCI Load Commutated Inverter GTO/SGCT Current Source Induction Motor Drive
Voltage Source Drives

LV IGBT Paice Multilevel PWM MV IGCT PWM Diode or Active Source MV IGBT PWM Integrated package MV IEGT PWM Active or Diode Source
Current Source Drives
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LCI Current Source Load Commutated Inverter

SCR SCR
Volts
UTILITY
DC Link Inductor
Sync Motor
Alternate: Multi-pulse/ Multi-channel Converter
Example: GE-Innovation
Inverter Topology Current source Load-Commutated Inverter SCR = Silicon Controlled Rectifier, Thyristor

Series LCI
Advantages Limitations
Requires a controlled front end extra complexity High motor current THD Slow transient response Limited starting performance Poor PF at low motor speeds High harmonics unless multiple channels used; filters may be needed.
Energy stored in Link Inductor
Practical Power Range Above 6 MW Synchronous Motors Only
Low Parts Count Full Regen is inherent Rugged ultra reliable Economical High HP N+1 SCR device redundancy possible
05-31-05
Primarily being offered by: TM GE, ABB, Siemens

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Alternate LCI Configurations

SM
SM
12-Pulse input 12-Pulse output
6-Pulse input 6-Pulse output 24-Pulse input 12-Pulse output

SM
SM
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Current Source GTO / SGCT Induction Motor Drive

GTO / GCT
Volts
UTILITY
SCR
DC Link Inductor
Induct Motor
Example: GE-GTO IMD Induction Motor Drive

Inverter Topology
Current Source GTO or SGCT PWM Inverter GTO = Gate Turn Off Thyristor SGCT = Symmetrical Gate-Controlled Thyristor

Practical Power Range
Advantages
Low power device (GTO/SGCT) parts count Low motor THD Low motor insulation stress IF input isolation transformer is used
Limitations
Requires a controlled front end extra complexity Poor input power factor, with SCR front end Slow transient response Narrow speed range Potential torsional resonance between motor & caps Complex firing circuit High switching losses
2 - 15 MW Primarily induction motor load
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Primarily being offered by: Allen Bradley 32
Current Source SGCT Induction Motor Drive With Isolation Reactor in Place of Transformer
Volts UTILITY "Isolation" Inductor

SCR or GCT
DC Link Inductor
Induct Motor*
* nonstandard
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LCI Current Source Load Commutated Inverter

SCR SCR
Volts
UTILITY
DC Link Inductor
Sync Motor
Example: GE-Innovation
Inverter Topology Current source Load-Commutated Inverter SCR = Silicon Controlled Rectifier, Thyristor

Series LCI
Advantages Limitations
Requires a controlled front end extra complexity High motor current THD Slow transient response Limited starting performance Poor PF at low motor speeds High harmonics unless multiple channels used; filters may be needed.
Practical Power Range Above 6 MW Synchronous Motors Only
Low Parts Count Full Regen is inherent Rugged ultra reliable Economical High HP N+1 SCR device redundancy possible
05-31-05
Primarily being offered by: TM GE, ABB, Siemens

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Alternate LCI Configurations

SM
SM
6-Pulse input 6-Pulse output 24-Pulse input 12-Pulse output

SM
SM
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Voltage Source Drives
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Voltage Source General Drive Arrangements

Volts
Diode Rectifier Converter Fed Energy stored in DC Link Capacitors
Motor UTILITY
Volts Motor
Active Rectifier Converter Fed
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PWM: Pulse Width Modulation

A method of varying voltage by changing the average ON time of switches between source and load.
Example Pulse-Width-Modulated [PWM] Waveform

PEAK DC SOURCE VOLTAGE
Voltage: The Average of the time the Voltage is ON Plus the time the Voltage is OFF.
Current: The Motor tends to smooth the resulting current
EXAMPLE SIMULATED SINE WAVE PRODUCED BY 2-LEVEL PWM INVERTER
Example Two-Level Voltage Source Inverter

Rectified 3-Phase
1.2 1 0.8 0.6
0.4
3 Phase Diode Bridge
PWM Motor Volts

0 50 100 150 200 250 300 350 400
0.2
[+] AC Incoming Line

Three Phase Input
1.2
DC Buss Rectified Power
Cap Bank
DBR
a b c
0.7
0.2 0 -0.3 50 100 150 200 250 300 350 400
-0.8
-1.3
[- ] Motor Amps
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Multi-level Voltage Source PWM MV Inverter using LV IGBTs
Example: GE Innovation Series Type H

Diode Rectifier
Fixed DC Bus Inverter (IGBT)
Typical Power Cell
Energy stored in electrolytic caps

Major Limitations Practical Power Range
0.5 - 15 MW Per Channel Sync or Induction motor
Inverter Topology
Major Advantages
Multi-level Voltage Low motor current THD Source LV IGBT PWM Fast transient response Inverter Wide motor frequency range No significant torque pulsations LV IGBT = Low-voltage High starting torque. Insulated Gate Bipolar Multi-pulse converter for very Transistor low AC line harmonics High true pf over all speeds Power Cell redundancy available
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Large parts count Redundancy option adds parts and decreases MTBF Electrolytic capacitors degrade with time and are sensitive to overvoltage No regen or DB possible Large footprint in high HP
Primarily being offered by: Robicon, Toshiba Japan 40
Power Cell N+1 Redundancy

N+1 redundancy originated in LCI drive design, defined as having an extra SWITCHING DEVICE per leg, with no other added parts. Another method re-defines N+1 as including failed-cell detection control, firing circuit & SCR bypass switch PER SERIES MODULE:
Cell must be intact and control 100% functional to work Added parts decrease drive component MTBF
Traditionally, increased reliability comes from reducing parts count and conservative design.
DC link reactor Load converter
Source converter
LCI drive
N+1 requires 12 SCRs
MV Drive with LV IGBTs

N+1 [extra voltage capacity power cells] adds
Control failed-cell detection, Firing circuits & 12 bypass SCRs still having single point failure mode in power supplies and controls
TYPICAL LV IGBT POWER MODULE FOR REDUNDANT USE
Feed Transformer
Sync Motor
Fixed DC Bus
Added Power Devices for Redundancy Shaded Green
BYPASS SCR
Diode Rectifier
ELECTROLYTIC CAPS
Inverter (IGBT)
Failed Cell Detect
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IGCT PWM Voltage Source Inverter

Fixed DC Bus AC Input Diode or IGCT Rectifier Inverter (IGCT)
Filter Option
Induction Motor or sync Motor [req field exciter]
Example: TMEIC TMdrive 80 IGCT Drive

Inverter Topology Major Advantages
Low power switch device count IGCT PWM Voltage Source Inverter Three Level Very high power levels possible when largest IGCT devices are used Fast transient response & good low motor frequency range High starting torque Regen possible with active IGCT converter
Energy stored in liquid filled caps

Major Limitations
Drive 3-level output above 3.3 kV requires output filter for low motor voltage transients. If full sine filter is used, potential exists for resonance between load and filter. Max switching frequency limits top motor frequency Complex firing circuit Higher switching losses than IEGT or IGBT topology

0.5 12 MVA per inverter channel 4.8 48 MVA, multiple channels
05-31-05
Primarily being offered by: TMEIC, ABB
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IGCT PWM Voltage Source Inverter

Details & Alternate Configurations
Motor
Alternate IGCT converter and 24-pulse diode converter
12 pulse diode converter & IGCT PWM Drive [Typical Entry Level Offering]
24 Pulse Diode Converter IGCT Active Converter

05-31-05 Copyright & Proprietary to TM GE Automation Systems
B
43
MV IGBT NPC Voltage Source Drive

Multi-Winding Transformer
1
Ind or Sync Motor
Example: TM GE Dura-Bilt5i MV
Inverter Topology
Three / Five Level Voltage Source MV IGBT PWM Inverter MV IGBT = MediumVoltage Insulated Gate Bipolar Transistor
Multi-Pulse 2 Diode Rectifier Liquid Filled MV-IGBT Power Caps NPC Inverter
Major Advantages
Minimum parts count for voltage rating & waveform Simple firing circuit. High efficiency Low motor current THD Fast transient response Wide motor frequency range No significant torque pulsations High starting torque. Multi pulse converter for very low AC line harmonics High true pf over all speeds
Major Limitations
No regeneration available Fast rise time IGBT switching may require dv/dt output filter in some cases Power Device redundancy not practical

0.5 4.8 MVA per inverter, air cooled 4.8 9.6 MVA, dual channel Sync or Induction Motors
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Primarily being offered by: TM GE, Siemens
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MV IGBT NPC Voltage Source Drive Details

24-P Source 24-P Source 24-Pulse Source W-Phase Leg V-Phase Leg U-Phase Leg Assembly
M N
Neutral Point Clamped [NPC] reduces voltage to ground 5 / 9 level waveform < 3% motor current distortion 24 pulse diode converter <2% line current distortion, better than IEEE 519 limits
Example 5/9 level motor voltage & current waveforms
460 Vac
Voltage Detection Module
Optical Link Module
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IEGT PWM Voltage Source Inverter

AC Input Fixed DC Bus Converter (IEGT) Inverter (IEGT) Induction Motor or sync Motor [req field exciter]
Example: TM GE 10 MW TMdrive 70 IEGT drive with active IEGT Source

Inverter Topology
Three Level Voltage Source IEGT PWM Inverter IEGT = Injection Enhanced Gate Transistor
Energy stored in liquid filled caps

Major Limitations Practical Power Range
6 to 40 MW, water cooled, one or two channel At 3300 volts Sync or Induction Motor
Major Advantages
Minimum power device count 24 for IEGT device limits complete 10 mw regen system in 126 motor output to 3300 inch footprint. volt [European and Simple firing circuit and very high Asian Standard] system MTBF. 3300 volts is not as Low motor current THD common as 4160 volts Fast transient response & wide motor in North American frequency range applications. High starting torque with no significant torque pulsations Active front end for IEEE-519 compliant harmonics, regeneration, unity or leading PF
Primarily being offered by: TM GE

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IEGT PWM Voltage Source Inverter & Active Converter

Circuit Details & Alternate Diode Converter Configuration
10 MW IEGT Inverter with active regen-capable source
Transformer & Feed Reactor 20% Z
IEGT PWM Voltage Source Inverter with Diode Converter

Induction Motor or sync Motor [req field exciter]
AC Input
Fixed DC Bus Diode Rectifier Inverter (IEGT)

3 Level VFD Line-Line Output & Reference Sine Wave
1.08 1.0
PEAK RMS Red = 3-level PWM Voltage output
0.7
0.2 0 50 100 150 200 250 300 350 400
Simulated Inverter Voltage Waveforms of 3 / 5 level NPC PWM

Sync Field [If Applic] INDUCTION OR SYNC MOTOR
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Summary MV Drives & topologies have grown up [and passed on] as new devices appeared. Each topology offers strengths and limitations. As developments continue, complexity and cost / kW will continue to fall.
Global Office Locations: TM GE Automation Systems, USA 1501 Roanoke Blvd. Salem VA, 24153 USA TEL: +1-540-387-5741; FAX: +1-540-387-7060 www.tmge.com Toshiba-Mitsubishi Electric Industrial Systems Corp. Mita 43 Mori Bldg. 13-16 Mita 3 chome, Minato-ku Tokyo 108-0073 Japan TEL: +81-3-5444-3828; FAX: +81-3-5444-3820 www.tmeic.co.jp
Innovation Series, Dura-Bilt5, and Dura-Bilt5i are registered trademarks of the General Electric Company
05-31-05
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MV AC Drive Topology Analysis 1143643595

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Medium Voltage AC Drive Topology

Comparisons & Feature-Benefits

Typical AC Inverter System

AC Inverter Technology Up To 97% Efficiency, including transformers

Copyright & Proprietary to TM GE Automation Systems

Two Basic AC Drive Topologies

Evolution of Power Devices

The Common Threads:

Development Time Line of Power Semiconductors

1965 Silicon Controlled Rectifier (SCR)

1985 Gate Turn Off Thyristor (GTO)

1995 Integrated Gate Commutated Thyristor (IGCT)

2005 Symmetrical Gate Commutated Thyristor (SGCT)

Copyright & Proprietary to TM GE Automation Systems

Silicon Diode Family of Devices

Diode and Thyristor Families of Devices

Conducts positive current

Thyristor Family of Devices

Gate Turn Off Thyristor (GTO)

Integrated Gate Commutated Thyristor (IGCT)

Symmetrical Gate Commutated Thyristor (SGCT)

Copyright & Proprietary to TM GE Automation Systems

Transistor Family of Devices

Transistor Family of Devices

Insulated Gate Bipolar Transistor (IGBT)

Injection Enhanced Gate Transistor (IEGT)

Copyright & Proprietary to TM GE Automation Systems

Power Device Comparison Detailed Overview

Copyright & Proprietary to TM GE Automation Systems

Comparison Areas Comparison Areas for Drive Power Devices

Switching speed, switching losses On-state forward drop and losses

Continuous current ratings Forward & reverse blocking voltage

Physical mounting & thermal characteristics

Comparing Gate Power of Devices - 1

Switching of GTO I gate

Large Gate Current (800A)

Switching of IGCT I gate

Faster Switching Speed

Brief but Very Large Gate Current (4000A)

Comparing Gate Power of Devices - 2

Switching of IGBT I gate

GTO Gate Driver & Cell Stack Equipment

Copyright & Proprietary to TM GE Automation Systems

GCT Gate Driver Equipment

Integrated Gate Signal Unit

Copyright & Proprietary to TM GE Automation Systems

Example GCT & Gate Driver Board

36 Electrolytic caps 21 FET Switches

Typical IGBT & IGBT Gate Driver Circuit

Typical MV IGBT Dual Gate Driver

Approximate Size: 4 inches x 4.5 inches

Copyright & Proprietary to TM GE Automation Systems

IEGT Latest Generation Voltage Switched Power Device

IEGT Gate Driver Equipment

IEGT = Injection Enhanced Gate Transistor

Copyright & Proprietary to TM GE Automation Systems

3500 3000 2500 2000 1500

Power Device Losses

Two Categories of Device Loss:

Power Device Losses

Open Circuit volts

Power loss in device

Copyright & Proprietary to TM GE Automation Systems