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2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.0 0.3 3.2 0.2 4.5 0.2 2.7 0.2
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.
15.0 0.3
3 0.1 4 0.2
Low On-Resistance RDS (on) 1 = 40m Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60m Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. Low Ciss Built-in G-S Protection Diode Isolated TO-220 Package
13.5MIN.
12.0 0.2
FEATURES
1 2 3
Body Diode
Source
The information in this document is subject to change without notice. Document No. D10623EJ2V0DS00 (2nd edition) Date Published April 1996 P Printed in Japan
1994
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TEST CONDITIONS VGS = 10 V, ID = 13 A VGS = 4 V, ID = 13 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 13 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 13 A VGS (on) = 10 V VDD = 30 V RG = 10 ID = 25 A VDD = 48 V VGS = 10 V IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di/dt = 100 A/s
MIN.
TYP. 28 45
MAX. 40 60 2.0
UNIT m m V S
1.0 8.0
1.6 18
IDSS IGSS Ciss Coss Crss td (on) tr td (off) tf QG QGS QGD VF (S-D) tr r Qr r
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
VGS 0 10 % ID 90 % 90 % ID ID
Wave Form
RL
VDD
VDD
10 % tr
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100 80 60 40 20
20
40
60
80
TC - Case Temperature - C
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS=20V VGS=10V Pulsed
ID(DC)
ID - Drain Current - A
10
DS
n (o
ID - Drain Current - A
1m 10 m
=1
00
100
s
80 60 40 20
DC
VGS=4V
10
100
ID - Drain Current - A
100
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W Rth(ch-a)=62.5C/W
100
10 Rth(ch-c)=5.0C/W 1
0.1
PW - Pulse Width - s RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT yfs - Forward Transfer Admittance - S 1000 VDS=10V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60
100
40
ID=13A
10
20
10
20
30
VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 VGS(off) - Gate to Source Cutoff Voltage - V Pulsed 2.0
VDS = 10 V ID = 1 mA
60 VGS=4V 40
1.5
1.0
20
VGS=10V
0.5
10 ID - Drain Current - A
100
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80 VGS=4V
60
VGS = 0 f = 1 MHz
1 000
Ciss Coss
100
Crss
10 0.1
10
100
1 0.1
VGS
12 10 8 6
100
40
10
20 VDS 0 10 20 30 40
4 2 0
1 0.1
10
100
IF - Dionde Current - A
QG - Gate Charge - nC
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REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 C10535E C10943X MEI-1202 X10679E TEA-1034 TEA-1035 TEA-1037
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[MEMO]
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: Standard, Special, and Specific. The Specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in Standard unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11