SEMITOP

3
IGBT Module
SK45GH063
Preliminary Data
Features

Compact design

One screw mounting

Heat transfer and isolation

through direct copper bonded
aluminium oxide ceramic (DCB)

N channel, homogeneous Silicon

structure (NPT-Non punchtrough
lGBT)

High short circuit capability

Low tail current with low

temperature dependence

UL recognized, file no. E63532

Typical Applications

Switching (not for linear use)

lnverter

Switched mode power supplies

UPS
GH
Absolute Maximum Ratings
T
s
= 25 C, unless otherwise specified
Symbol Conditions Values Units
IGBT
V
CES
T
j
= 25 C 600 V
l
C
T
j
= 125 C T
s
= 25 C 45 A
T
s
= 80 C 30 A
l
CRM
l
CRM
= 2 x l
Cnom
100 A
V
GES
20 V
t
psc
V
CC
= 300 V; V
GE
20 V;
VCES < 600 V
T
j
= 125 C 10 s
Inverse Diode
l
F
T
j
= 150 C T
s
= 25 C 57 A
T
s
= 80 C 38 A
l
FRM
l
FRM
= 2 x l
Fnom
100 A
l
FSM
t
p
= 10 ms; half sine wave T
j
= 150 C 440 A
Module
l
t(RMS)
A
T
vj
-40 ... +150 C
T
stg
-40 ... +125 C
V
isol
AC, 1 min. 2500 V
Characteristics
T
s
= 25 C, unless otherwise specified
Symbol Conditions min. typ. max. Units
IGBT
V
GE(th)
V
GE
= V
CE
, l
C
= 1 mA 4,5 5,5 6,5 V
l
CES
V
GE
= 0 V, V
CE
= V
CES
T
j
= 25 C 0,15 mA
T
j
= 125 C mA
l
GES
V
CE
= 0 V, V
GE
= 30 V T
j
= 25 C 120 nA
T
j
= 125 C nA
V
CE0
T
j
= 25 C 1 V
T
j
= 125 C 1,1 V
r
CE
V
GE
= 15 V T
j
= 25C 20 mO
T
j
= 125C mO
V
CE(sat)
l
Cnom
= 50 A, V
GE
= 15 V T
j
= 25C
chiplev.
2,1 2,5 V
T
j
= 125C
chiplev.
V
C
ies
2,2 nF
C
oes
V
CE
= 25, V
GE
= 0 V f = 1 MHz nF
C
res
0,2 nF
Q
G
V
GE
= 0 ... 20 V 155 nC
t
d(on)
45 ns
t
r
R
Gon
= 22 O V
CC
= 300V 35 ns
E
on
l
Cnom
= 30A 1,4 mJ
t
d(off)
R
Goff
= 22 O T
j
= 125 C 250 ns
t
f
V
GE
=15V 25 ns
E
off
1,2 mJ
R
th(j-s)
per lGBT 1 K/W
SK45GH063
1 13-02-2007 DIL by SEMIKRON
SEMITOP

3
IGBT Module
SK45GH063
Preliminary Data
Features

Compact design

One screw mounting

Heat transfer and isolation

through direct copper bonded
aluminium oxide ceramic (DCB)

N channel, homogeneous Silicon

structure (NPT-Non punchtrough
lGBT)

High short circuit capability

Low tail current with low

temperature dependence

UL recognized, file no. E63532

Typical Applications

Switching (not for linear use)

lnverter

Switched mode power supplies

UPS
GH
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
V
F
= V
EC
l
Fnom
= 30 A; V
GE
= 0 V T
j
= 25 C
chiplev.
1,3 1,5 V
T
j
= 125 C
chiplev.
1,2 1,45 V
V
F0
T
j
= 125 C 0,85 0,9 V
r
F
T
j
= 125 C 8 16 mO
l
RRM
l
Fnom
= 30 A T
j
= 125 C 30 A
Q
rr
di/dt = -500 A/s 3 C
E
rr
V
CC
= 300V 0,9 mJ
R
th(j-s)D
per diode 1,2 K/W
M
s
to heat sink M1 2,25 2,5 Nm
w 30 g
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SK45GH063
2 13-02-2007 DIL by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (I
C
) Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 6 Typ. gate charge characteristic
SK45GH063
3 13-02-2007 DIL by SEMIKRON
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 10 CAL diode forward characteristic
SK45GH063
4 13-02-2007 DIL by SEMIKRON
UL recognized file no. E 63 532
Case T19 (Suggested hole diameter, in the PCB, for solder pins and plastic mounting pins: 2mm)
Case T 19 GH
SK45GH063
5 13-02-2007 DIL by SEMIKRON