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AN-9742
Device Selection Guide for Half-Bridge Welding Machine (IGBT & Diode)
Summary
Various topologies; including two SW-forward, half-bridge and full-bridge, have been used for low-voltage / highcurrent DC-ARC welding machines for system minimization and efficiency improvement. Of these topologies, halfbridge is the most commonly used for small form factor, less than 230A capacity welding machines. Compared to fullbridge topology with the same power rating, half-bridge requires more transformer wiring and higher current capacity of inverter; but requires fewer power devices. Taking a Fairchild evaluation board as the example, this article presents a device selection guide for a half-bridge welding machine application.

Duty Cycle of a Welding Machine

In the welding industry; duty cycle refers to the minutes out of a 10-minute period a welder can be operated at maximum rated output without overheating or burning up the power source. For instance, a 140A welder with a 60% duty cycle must be rested for at least 4 minutes after 6 minutes of continuous welding at maximum rated output current 140A.

Allowable Duty Cycle

If actual current in use is smaller than a rated output current, the welder internal heating decreases. The welder then can be used at a higher rate than the specified duty cycle. Its allowable duty cycle can be calculated as:
rated output current = using output current duty cycle of welding machine
2

Description of Welding Machine

Generally, based on the type of welding machine, the output voltage can be calculated as shown in Table 1. Table 1. Welding Machine Output Voltage Output Voltage
0.04IAC+15 0.04IAC+10 0.04IAC+20

(1)

Welding Machine
CO2 TIG DC ARC

Example
0.04200A+15=23V 0.04200A+10=18V 0.04200A+20=28V

For example, since only 80A to 130A current would be required to weld a 3.2 welding rod, a 140A welder with a 60% duty cycle can operate for a longer time for this application. Assuming 100A is used to weld a 3.2 welding rod, actual duty cycle is more than 78.4%. Besides the actual output current, the temperature also affects the allowable duty cycle of a welding machine. Do NOT overheat welder machines.

Table 2.

Feasible Welding Materials by Welding Machine Gas

CO2 He + Ar

Welding Machine
CO2 MIG MAG DC-TIG AC-TIG Mixed TIG DC-ARC AC-ARC

Welding Type Steel

Mild, High Tensile Aluminum, SUS, Aluminum Alloy Sheet Metal, Low Alloy, High Tensile Stainless, Mild, Copper Alloy, Nickel Alloy, Titanium Alloy, Low Alloy Aluminum Alloy, Magnesium Alloy, Bass Light Alloy, Clad Plate Steel, Nonferrous Metals Aluminum

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APPLICATION NOTE

Fairchild DC-ARC Welding Machine Evaluation Board

Evaluation Board Features
Input Stage: 50A Bridge Diode (600V, 50A, SquareBridge Type) Input Filter Stage: Designed Under Consideration of Conductive Noise and Radiation Noise Controller: PIC16F716 (8-Bit ADC and 10-Bit PWM) Inverter Stage: FGH40N60SMD (within Co-Pak Diode) Single or Parallel Output Rectifier: FFA60UP30DN * Six Units (Three Ultra-Fast Diode in Parallel) Gate Driver: Opto-Coupler for the Isolation between Switching Devices and Controller Dual Power Supply +15V, -5V for IGBT Gate Voltage AUX Power Supply: Lower Standby Consumption Green Integrated PWM IC Input Voltage and Frequency: 220VAC 60Hz Output Voltage (VOUT) and Output Current (IWEL): 26VDC, 140A Efficiency: > 80% Idle Power: < 4W Switching Frequency: 20KHz Figure 2 shows the main block diagram of the welding machine evaluation board. The output current and output voltage of the DC-ARC welding machine evaluation board are 26V and 140A, which constitutes a 3kW-class welding machine. Various Fairchild Semiconductor components are used to meet the design requirements. The switching frequency of the machine is 20KHz. Due to their size; the transformer and inductor are installed beside the board. An air fan is attached for cooling.

Figure 1. Evaluation Board

Figure 2. Main Block Diagram

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APPLICATION NOTE

Half-Bridge Inverter Design

The turn ratio of the primary and secondary of the transformer in a half-bridge topology can be obtained from the equation:
N1 = VIN ( MIN ) DMAX 4 B Ae f SW

IGBT Selection for Welding Machine

Among various power switching components, Insulated Gate Bipolar Transistor (IGBT) is the most suitable device for welding machines thanking for its high current handling capability and high switching speed. IGBT is a voltagecontrolled power transistor, similar to the power MOSFET in operation and construction. This device offers superior performance to the bipolar-transistors. It is the most costeffective solution for high power and wide frequency-range applications. Table 3 shows the characteristics comparison of IGBT with BJT and MOSFET. Table 3.
(4)

(2) (3)

N1 =

(VO + VF + VI ) N1 DMAX VIN ( MIN )

where VI = VS, IWEL = output current, Id1 & Id2 = diode current (output high side & output low side). Output voltage under no load condition is given by:
Vnolaod =

Device Characteristics Comparison BJT

Current Complex Low High Slow( s) Low Narrow Low

(VO + VF = VI )
DMAX

Features
Drive Method Drive Circuit Input Impedance Drive Power Switching Speed Operating Frequency S.O.A Saturation Voltage

MOSFETS
Voltage Simple High Low Fast(ns) Fast (less than 1MHz) Wide High

IGBT
Voltage Simple High Low Middle Middle Wide Low

where: VO=output voltage; VF=diode drop voltage; and VI=inductor voltage drop. Transformers primary and secondary current can be obtained by:
I1rms = N2 IWEL N1

(2 DMAX ) (1 + 2 DMAX )

(5) (6)

1 I 2rms = IWEL 2

Current running through the IGBT and secondary-side rectifier diode can be calculated by:
IGBT Current : I D =
N2 IWEL N1

(7)

Output rectifier diode voltage and current:

Vr = N2 VIN ( MAX ) , IWEL = I d12 + I d 2 2 N1

(8)

Power losses of an IGBT include conduction loss and switching loss. The conduction loss is determined by IGBTs Vce(sat) value and the duty rate. The switching loss is determined by turn-on and turn-off action during IGBTs switching transient. For IGBTs, there are technical trade-off characteristics between the Vce(sat) and the switching loss. If Vce(sat) is high, switching loss becomes low and vice versa. Therefore, the designer should select an IGBT based on the system configuration and its switching frequency. The total loss of an IGBT can be expressed as:
Total 1 Pulse Switching Switching Conduction Loss = X + (9) Loss Loss (EON + EOFF) Frequency (VCS(SAT) X IC X Duty)

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APPLICATION NOTE

Total Switching Loss[Eon+Eoff], Ets[mJ]

Figure 3 curves show the characteristics comparison between PT IGBT and field-stop IGBT. PT IGBT has NTC temperature characteristic: as temperature rises, Vce(sat) decreases. Field-stop IGBT has PTC temperature characteristic: as temperature rises, Vce(sat) increases. Therefore, PT IGBT with NTC characteristic is more suitable for the application where IGBT is operated solely. However, if parallel operation of IGBTs is required for current sharing, field-stop IGBT with PTC characteristic would be more appropriate.
80 70 60 50 40 30 20 10 0

The following figures show that the switching loss becomes the dominant factor over conduction loss in 25kHz and above switching frequency area.
2.0

1.5

FGH40N60SMD FGH40N60UFD FGH40N60SFD HGTG20N60A4D

Tc=25deg.C Tc=125deg.C

1.0

FGH40N60SMD FGH40N60UFD FGH40N60SFD HGTG20N60A4D

Tc=25deg.C Vge=15V

0.5

Collector Current, Ic[A]

0.0 10 20

Test Condition : Vcc=400V, Rg=10 ohm, Vge=15V

30 40

Collector Current, Ic[A]

Figure 5. Total Switching Loss Ets vs. Collector Current IC

250

Total power loss of IGBT, Pd [W]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

200

Collector-Emitter Voltage, Vce(sat)[V]

Figure 3. HGTG20N60A4D(PT) vs. FGH40N60UFD/SFD (Field-Stop Gen1)

80 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

ss r lo we po Vcc=400V, Rg=10 ohm, tal 150 Vge=15V, Ic=40A, Tc=125deg.C To

Test Condition :

FGH40N60SMD FGH40N60UFD FGH40N60SFD HGTG20N60A4D

FGH40N60SMD FGH40N60UFD FGH40N60SFD HGTG20N60A4D

Tc=125deg.C Vge=15V

100

50

ing itch Sw

+E on s[ E los

] off

Collector Current, Ic[A]

Conduction loss
0 20.0k 40.0k 60.0k 80.0k 100.0k

Switching Frequency, Fsw[KHz]

Figure 6. Total Power Loss of IGBT Pd vs. Switching Frequency

Collector-Emitter Voltage, Vce(sat)[V]

Figure 4. FGH40N60SMD (Field-Stop Gen2)

The gate resistor is also very critical to the switching loss. High gate resistance results in high switching loss. On the other hand, high gate resistance improves EMI performance as the di/dt is lower during the switching transient. A properly selected gate resistor should minimize the switching loss without sacrificing system EMI performance.

Reduction of conduction loss and total device cost with better thermal performance would be the advantage of the parallel operation of IGBTs. However, for such kind application, the following must be considered: Using high-temperature PTC characteristic IGBT Using gate resistor with 1% tolerance for each IGBT Proper gate PCB layout for symmetrical current paths Identical heat sink size and airflow for each IGBT Same threshold voltage and saturation voltage characteristics
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APPLICATION NOTE

Below are the IGBT turn-off characteristics measurements with JIG testing. Under the same conditions, FS Planar Gen2 IGBT FGH40N60SMD shows faster switching characteristic, lower Vce(sat), and tremendously lower turn-off loss compared to previous technology devices - PT and FS Planar Gen1 IGBT.
1.0

Figure 9 and Figure 10 show the IGBT operation waveforms of the evaluation board with R-load and welding load. These waveforms reveal that welding load consumes three times the current that R-load consumes. Therefore, it is important to select IGBT with suitable Icm parameter to avoid saturation at peak-current condition.

Switching Loss, Eoff[mJ]

0.8

FGH40N60SMD FGH40N60UFD FGH40N60SFD HGTG20N60A4D

Tc=25deg.C Tc=125deg.C

0.6

0.4

0.2 5 10

Test Condition : Vcc=400V, Ic=40A, Vge=15V

15 20 25 30

Gate Resistance, Rg[ohm]

Figure 7. Turn-Off Loss EO vs. Gate Resistance Rg

16

Figure 9. R-Load Test at IOUT=14A

Tc=25deg.C FGH40N60UFD

Switching loss, Eoff / A[uJ]

12

HGTG20N60A4D

FGH40N60SMD
8 1.6 1.8 2.0

FGH40N60SFD

2.2

2.4

Collector-Emitter Voltage, Vce(sat)[V]

Figure 8. Turn-Off Loss EOFF vs. Collector-Emitter Vce(sat)

Figure 10. Welding-Load Test at 3.2 Pie Welding Rod

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APPLICATION NOTE

Figure 11 through Figure 16 show turn-off switching loss EOFF measurement with welding load and R-load. Due to the leakage inductance and capacitor element, there is huge

difference in EOFF measurement compared with the JIG test result. The EOFF of FGH40N60SMD shows the lowest loss from the test.

Figure 11. EOFF Comparison Under R-Load (FGH40N60SMD)

Figure 12. EOFF Comparison Under R-Load (FGH40N60UFD)

Figure 13. EOFF Comparison Under R-Load (FGH40N60SFD)

Figure 14. EOFF Comparison Under Welding Load (FGH40N60SMD)

Figure 15. EOFF Comparison Under Welding Load (FGH40N60UFD)

Figure 16. EOFF Comparison Under Welding Load (FGH40N60SFD)

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APPLICATION NOTE

Rectifier Diode for Welding Machine

Fairchild Semiconductor provides five kinds of diodes that cater to different applications. Diodes with lower Vf, Irr, and Trr characteristics are ideal for welding applications; however, the common P_N theory dictates that the lower the Vf, the longer the Trr and vice versa. A designer chooses a diode with a trade-off point where Vf and Trr benefit the system efficiency the most. The following figures show performance comparisons for 600V/8A diodes from each Fairchild Semiconductor diode technology.
2.8 2.6 2.4 2.2

Qrr =

1 I rr t rr 2

(10)

Generally, the rectifier diode of welding machine has higher conduction loss than reverse recovery loss. Therefore, the diode VF value is more critical for a welding application. For this reason, ultra-fast diode FFA60UP30DN (30A dual diode) is used for this evaluation board. Three diodes are used in parallel for each tap of transformer to lower the VF. The figures below show the performance of diodes used in single and parallel configuration. Although the reverse recovery loss increases, Vf is reduced with parallelized diodes and better thermal performance can be expected. Designer caution is required for parallel diode application to ensure that the air flow does not cause unbalanced current conditions, as the Vf of diode tends to decrease when the temperature rises.
100

FCS Rectifier Diode Vf vs Qrr, 600V 8A

Stealth2 Stealth

Ulrafast Hyperfast Hyperfast2 Stealth Stealth2

Hyperfast

Hyperfast2

VF [V]

2.0 1.8

Tc=25deg.C

Diode I-V charateristic Tc=25deg.C Tc=125deg.C

1.6

Ultrafast
1.4 1.2 1.0 0 20 40 60 80

80

IF, Forward Current [A]

Qrr [nC]

60

Figure 17. VF vs. Qrr Trade-Off

10 8 6 4 2

FSC Rectifier performance @ 600V, 8A Ultrafast Hyperfast Hyperfast2 Stealth Stealth2 Tc=125deg.C

40

FFA60UP30DN-Dual
20

FFA60UP30DN-single
0 0.0 0.6 1.2 1.8

IF [A]

0 -2 -4 -6 -8 -10

VF, Forward Voltage [V]

Figure 20. Diode I-V Characteristic

360
-12 -80.0n -40.0n 0.0 40.0n 80.0n 120.0n 160.0n

FFA60UP30DN Qrr charateristic VR = 150V IF = 30A Single Dual Tc=125deg.C

Figure 18. Reverse Recovery Performance

Stored Recovery charge Qrr [nC]

Time [sec]

300

240

180

120

60

Tc=25deg.C

0 100

200

300

400

500

di/dt [ A/us]

Figure 21. Stored Recovery Charge Qrr vs. Diode Current Slop di/dt

Figure 19. Test Circuit and Waveforms

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APPLICATION NOTE

Figure 22 shows the diode switching loss when the board is operating at 20KHz. The conduction loss is about 336J, while the reverse recovery loss is only about 4J.

Figure 24. UIS Test Circuit

Figure 22. Diode Conduction Loss During Welding Figure 25. FFA60UP30DN Immunity Capability

Blocking Capacitor
For half-bridge topology; if the two series DC bank capacitors or the turn-on time of IGBTs are not matched, DC flux occurs in the transformer. The accumulated DC flux eventually drives transformer into saturation. The IGBTs can be destroyed by sharply increased current due to the saturated transformer. To block the DC flux in the transformer core, a small DC blocking capacitor is placed in series with the transformer primary. The value of the DC blocking capacitor is given by:
Figure 23. Diode Reverse Recovery Loss During Welding

Cblocking =

Avalanche occurs in a diode with sudden current increase when the voltage across a diode exceeds the specified Vr value. Here, the area (Vr(AVL)*Isa) that diode does not fail is called avalanche energy and the equation is:

where VP is the permissible droop in primary voltage due to the DC blocking capacitor. Below is the waveform of the transformer primary current. The current abruptly rise due to the saturated transformer caused by DC bias.

D max ID VP Fsw

(12)

1 Vr ( AVL ) ] EAVL = L Isa 2 [ 2 (Vr ( AVL ) VDD)

Q1 = IGBT ( BV ces ) > DUT (Vr ( AVL ))

(11)

Avalanche energy is occurred by the second output inductor, as shown in the equation. The immunity capability is proportional to the inductance. The inductance of a welding machine is generally designed as small value as several H, and diode immunity capability value becomes an important factor for choosing a device. Avalanche can occur in the secondary-side rectifier of a welding machine; especially when the welding work is completed and the reverse pass occurs by inductor. Immunity capability is measured using a circuit as shown in Figure 24 with the graph in Figure 25 showing avalanche energy test result waveform.
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Figure 26. IGBT Saturation Current

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APPLICATION NOTE

Figure 27. Zoom of IGBT Saturation Current

Figure 28. PWM Convert 40KHz to 20KHz

Power Supply Structure and Design

MOSFET integrated IC FSMG0465R is used for power supply. Its simple peripheral circuit and 66KHz switching frequency reduce the PCB and transformer size. In addition, the efficiency of power has been maximized by the minimization of idling power that can be achieved from low power consumption in Standby Mode (<1W at 230VAC input at 0.5W load). There are transformer type and SMPS type for the substitute power supply. SMPS type, compared to linear transformer type, has stable output power over the influence of input serge, sag, and noise; and minimal design of size and weight is possible. In addition, transformer type has a fixed input voltage, whereas SMPS has a wide input voltage range of 80VAC~264VAC, which can be used for free voltage welding machine without additional operation. However, it is necessary to consider counter measures for noise as the switching noise may affect main inverter. For further information about Fairchild Power Switches (FPS), refer to the application note AN-4150 found at: http://www.fairchildsemi.com/an/AN/AN-4150.pdf.

Gate Driver Design

A transformer, opto-coupler, or HVIC can be used for a gate driver. Necessary supply voltages for different gate drivers are listed as:
HVIC Driver: +15V, 0V (High and Low Gate), + 24V, 0V (Output Detect), +5V, 0V (Controller) Otpo-Coupler Driver : +15V, 0V, -5V (High-Side Gate), +15V, 0V, -5V (Low-Side Gate), +24V, 0V (Output Detect), +5V, 0V (Controller) Pulse Transformer: +24V, 0V (Output Detect), +5V, 0V (Controller)

Controller Design
The evaluation board uses PIC16f716 for the control circuits. PIC16f716 controller consists of four ports of 8-bit AD converter and one port PWM timer with 9-bit, 40KHz resolution. To generate two PWM pulses from one PWM signal, a D flip-flop and an AND gate are used to divide the 40KHz PWM into 20KHz PWM pulse (see Figure 28).
R2 +5V 27k D1 1N4937 D2 1N4937 R1 10 ohm/3W C1 22uF/10V R3 1k C2 104 +5V 1 17 18 U1 PIC16C711 C10 104

The opto-coupler and transformer provide isolation between the control circuit and IGBTs. However, a transformer may cause half bridge cross-conduction due to the offset voltage of gate-pulse dead-time stage. Through an by integrated high-voltage MOSFET, the HVIC provides isolations between the control circuit and the high-side IGBT. This does not work with negative supply voltage. A negative supply voltage is necessary for HVIC during a fast commutation in a half-bridge topology to prevent dv/dt shoot-through. The shoot-through is linked to a fast voltage variation across one of the two IGBTs. A current flowing through collector-emitter capacitor can bring the gate voltage of an IGBT, when turned off, to rise due to Miller effect and obtain a cross conduction into the leg.
+5V +5V C11 10uF/10V R19 330 C12 104 2 D 4 U2A U3A 5 6 1 3 2 7409 7474 C13 470P +5V R20 330 2n3904d/ON -15V R17 1K Q2 Q U5 2 PS2501 3 5 4 C15 104 8 6 Gate1_1 gate1_2 +15V

J3 CT 2 1

VD D

14

RA0/AN0 RA1/AN1

2 BD1 +5V +5V +5V +5V +5V 1 +5V C19 C20 C21 C22 C23 104 104 104 104 104 R6 1K 2 1 R7 1K C4 104 J2 Output 2 1 VR2 5k 2 Temp R8 D5 VR3 5k J1 3 2 1 Current Limit C3 104 VR1 5k +5V

Temp

RA2/AN2 OSC1/CLKIN

16 X1 20Mhz C8 22P C9 22P +15V

OSC2/CLKOUT R4 36k R5 4 560 C5 104 MCLR/VPP RB7 RB6 RB5 2 RA3/AN3/VREF RB4 RB0/INT

15

+5V

C LR

D3 1N4937

D4 1N4937

RB3

CLK Q

PRE

U6 2 PS2501 3

8 6 5 4

C16 104 Gate2_1 gate2_2

R11 13 R12 12 R13

330 U4B 330 330 7409 4 6 5 R18 1K Q1

J1 TH

ZD! 1 1N4099

11 R14 10 R15 6 R16 330 3 330 330

2n3904d/ON C14 470P

-15V

10k

1N4937

R9 1k +5V LVD R10 1K 7 8 RB1 RB2

RA4/TOCKI GND

C6 105

PC1 PC817 C7 104 2 3

G1 Cont+

G2 Cont-

RD1 SD

G3 PWR

Y1 WLD

RD2 ERR

Figure 29. Controller Schematic

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APPLICATION NOTE

ICG = dv/ dt CCG

Q I CG = G CG dV / dt
Vge = Rg ICG

Figure 30. Effect on dv/dt to VGE

Figure 34. Opto-Driver Gate Waveform

DC Reactor Design
DC reactor helps stabilize arc current during welding operation. As DC reactance grows, specter occurs smaller. On the contrary, if the mobility of arc is lowered and the LDC value gets too large, it is harder to create an arc. Therefore, an appropriate reactor choice is necessary. If considering VOPEN as output no-load voltage, VWEL and IWEL as rated output voltage or current; the maximum LDC value can be obtained from the equation:

: LDC
Figure 31. Effect on dV/dt to Gate Wave

Based on the above considerations, an opto-coupler is used for this welding machine evaluation board. Figure 32 and Figure 33 present the gate waveforms captured with different types of gate drivers. It is clear the opto-coupler is the best choice for this welding application.

R tR IWEL In(1 R) Vopen

(13)

where R is the equivalent resistance of welding load and Tr is the rising time of the output current from 0 to the rated current. Once the maximum LDC value is obtained; the optimum LDC value can be finalized through testing.

Figure 32. HVIC Gate Waveform

Figure 35. Soft-Start During Welding Operating

Figure 33. Transformer Gate Waveform

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Figure 36. Welding Operating

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APPLICATION NOTE

Conclusion
Better performance is expected for a DC-ARC welding machine when the inverter devices are selected properly based on the inverter topology and its switching frequency. This article presents a power device selection guide for a half-bridge welding machine application.

When to chose an IGBT, its Vce(sat), Eoff turn-off loss, gate driver resistor, and Icm characteristics are the critical factors that require a designers careful attention. For the secondary -side rectifier diodes, it is important to determine which is the dominant factor, Vf or reverse recovery loss, based on system switching frequency. The evaluation board uses three ultra-fast diodes (FFA60UP30DN) in parallel for each tap of the transformer to lower the Vf and therefore the conduction loss.

References
Aspandiar, Raiyo, Voids in Solder Joints, SMTA Northwest Chapter Meeting, September 21, 2005, Intel Corporation. [2] Bryant, Keith, Investigating Voids, Circuits Assembly, June 2004. [3] Comley, David, et al, The QFN: Smaller, Faster, and Less Expensive, Chip Scale Review.com, August / September 2002. [4] Englemaier, Werner, Voids in solder joints-reliability, Global SMT & Package, December 2005. [5] IPC Solder Products Value Council, Round Robin Testing and Analysis of Lead Free Solder Pastes with Alloys of Tin, Silver, and Copper, 2005. [6] IPC-A-610-D, Acceptance of Electronic Assemblies, February 2005. [7] IPC J-STD-001D, Requirements for Soldered Electrical and Electronic Assemblies. [8] IPC-SM-7525A, Stencil Design Guidelines, May 2000. [9] JEDEC, JESD22-B102D, Solderability, VA, Sept. 2004. [10] Syed, Ahmer, et al, Board-Level Assembly and Reliability Considerations for QFN Type Packages, Amkor Technology, Inc., Chandler, AZ. [1]

Related Resources
FGH40N60SMD 600V, 40A Field Stop IGBT FFA60UP30DN 300V Ultrafast Recovery Power Rectifier FSGM0465R SMPS Power Switch, 4A, 650V (Green)

Appendix Circuit Diagrams

R6 10 + BUS C23 102 L5 P10 1 P3 1 P11 1 C62 472M 1 FAN 2 - BUS RV3 20D431K 3 LF1R FILTER RV1 20D431K L6 GND2 GBP5006 C55 472M RV2 20D431K C54 1uF M275V 4 2 Gate1 BD1 + 1 C1 400V 560uF C2 400V 560uF GND1 Gate2 ZD3 1N4744 ZD4 1N4733 R7 4.7k R8 10/3W Z3 FGA40N60SMD Gate2 ZD8 1N4744 ZD9 1N4733 R9 R5 4.7k D17 FGA60UP30DN 10/3W 10 102 ZD1 1N4744 ZD2 1N4733 R1 R2 4.7k 10/3W Gate1 ZD6 1N4744 ZD7 1N4733 R3 R4 4.7k 10/3W C61 CT1 T1 1 1 630V Z4 FGA40N60SMD 3 JF3250G 4 C51 10uF 630V 5 6 L4 8 D16 TRANSFORMER CT R39 FGA60UP30DN C24 C52 10nF 630V 52uH + Output D7 FGA60UP30DN Z1 FGH40N60SMD Z2 FGA40N60SMD C50 10uF 630V D3 FGA60UP30DN

D18

FGA60UP30DN

C53 10nF 630V

D19

FGA60UP30DN - Output

Figure 37. Main Circuit

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R211 10 C209 102 D203 T101 EER3940S 1 10 R212 R207 43K/1W R206 75K NTC1 AC220V H 2 R208 BD201 LF201 30mH TNR 10D471k C202 275Vac 100nF R201 1M/1W 3 4 + 1 C203 400V 100uF R203 150K 4 FB D201 GND Vcc 3 UF4004 R209 100 ohm/0.5W 2 Q201 2N2222 C205 33nF 100V ZD201 1N4745A 1 C206 100nF C207 47uF 50V 15 1 D38 1N4744 R210 1W 5 14 D206 13 R214 10 C212 102 R202 270K 6 2KBP06M3N25 U201 Vstr 1k FGM0465R Drain 1 8 12 MBRF10H100 1N4007 7 R21310 C211102 D205 C208 3.3nF 630V D202 3 11 C210

APPLICATION NOTE

L1 10uH +15v

MBRF10H100 C223 470uF 35V C224 470uF 35V GND1 C211 470uF 35V L2 10uH -15V MBRF10H100 C222 470uF 35V

10 D204 102

NTC
5D-9

L3 10uH 15+v C219 470uF 35V C220 470uF 35V GND2 C217 470uF 35V L4 10uH -15V C218 470uF 35V

C201 275Vac 100nF

AC220V N F201 250V 2A R204 C204 R205 47nF 1K 1K 2 PC1 2

MBRF10H100 R215 10 C213 L5 5v 16 XY MBRF10H100 C215 470uF 10V 4.9uH C216 1000uF 10V gnd 4.7nF/1KV R216 620 4 1 PC2 817 3 2 R217 1.2k R218 18K 1 2 C214 47nF R220 8K R219 8K

D207102

U202 TL431

Figure 38. Auxiliary Power Supply

Figure 39. Controller

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

2011 Fairchild Semiconductor Corporation Rev. 1.0.0 9/9/11

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