23rd Symposium on Microelectronics Technology and Devices: SB Micro 2008 IEEE / EDS Mini Colloquium September 1, 2008, Gramado,

Brazil

23rd Symposium on Microelectronics Technology and Devices: SB Micro 2008 IEEE / EDS Mini Colloquium September 1, 2008, Gramado, Brazil

Physics of Nanoscale Transistors:

An Introduction to Electronics from the Bottom Up Mark Lundstrom
Network for Computational Nanotechnology Birck Nanotechnology Center Discovery Park, Purdue University West Lafayette, Indiana USA
NCN
nanoHUB.org

technology trends..

5 m
log L

Moores Law
10 9 log # chip 10 3
2005

50 nm 5 nm 1975

models for devices (conceptual and computational)

Macroscopic dimensions

0.1 mm 10 m 1m 0.1 m 10 nm 1 nm 0.1 nm

drift-diffusion drift-diffusion + velocity saturation Boltzmann for velocity overshoot quasi-ballistic

Atomic dimensions

quantum mechanical

21st Century electronic devices

molecular electronics Al Gate
D
HfO2

10 nm SiO2

p++ Si
SWNT

nanonets

carbon nanotube electronics

CoFeB (3) MgO (0.85) Insulator CoFeB (3) Ru (0.85) CoFe (2.5) NCN
nanoHUB.org

nanowire PV
spin torque devices
5

nanowire bio-sensors

Electronics from the Bottom Up

1) Introduction 2) Generic model of a nanodevice 3) The ballistic MOSFET 4) Scattering in nano-MOSFETs 5) Discussion 6) Summary

generic model Gate

EF1

D(E U )

EF 2

S. Datta, Quantum Transport: Atom to Transistor, Cambridge, 2005 7 (Concepts of Quantum Transport nanohub.org)

filling states from the left contact Gate

Assumption: Each energy channel is independent

EF1

D( E U )

includes spin

N (E) = D(E U ) f1 (E)

0 1

d N(E) N10 (E) N = dt 1 8

filling states from the right contact Gate

D( E U )

EF 2

0 N 2 (E) = D(E U) f2 (E)

0 d N(E) N 2 (E) N = dt 2

steady-state
0 d N(E) N10 N N 2 N = + =0 1 2 dt

(1 1 )N10 (1 1 )N + (1 2 )N 20 (1 2 )N = 0

(1 1 ) N 0 (E ) + (1 2 ) N 0 (E ) N (E ) = (1 1 )+ (1 2 ) 1 (1 1 )+ (1 2 ) 2
N10 ( E ) D (E U ) f1 (E )
0 N 2 ( E ) D (E U ) f2 (E )
10

1 = h 1 1 = h 2

steady-state electron number, N(E)

N (E ) =

1 + 2

D (E U ) f1 (E ) +

1 + 2

D (E U ) f2 (E )

N (E ) = D1 (E U ) f1 (E ) + D2 (E U ) f2 (E )
1

D1 (E U ) = D2 (E U ) =

1 + 2 1 + 2 2

D (E U ) D (E U )

DOS that can be filled by contact 1 DOS that can be filled by contact 2
11

steady-state current, I
Gate

ID

ID

EF1
f1 (E )
N10 (E) N (E )

D(E U )

EF 2
f2 (E )

VDS

d N(E) = dt 1

0 d N(E) N 2 (E) N = dt 2 2

d N(E) d N(E) I D (E ) = +q = q dt 1 dt 2
12

result
q 1 2 I (E ) = D (E U )( f1 f2 ) h 1 + 2

1 = 2 =
2q I D = I (E )dE = 2 D (E U )( f1 f2 )dE h D (E U ) N = N (E )dE = ( f1 (E ) + f2 (E )) dE 2

13

final results

1 = 2 = = h
D (E U ) D (E U ) = 2
density-of-states per spin

2q ID = D (E U )( f1 f2 )dE h
N = D (E U )( f1 + f2 )dE

14

determining ()
energy channels are independent:
2q I D (E ) = D (E U )( f1 f2 ) h N (E ) = D (E U ) f1 (E ) + f2 (E )

if f1 >> f2 (source injects, drain collects), then:

qN h = = ID

stored charge ID = = transit time

15

Nanoelectronics and the Meaning of Resistance

1) What and where is the resistance? 2) Microscopic model for electrical resistance 3) Spins and magnets 4) Energy conversion 5) Beyond the one-electron picture

Supriyo Datta
Electronics from the Bottom Up on nanoHUB.org
16

outline

1) Introduction 2) Generic model of a nanodevice 3) The ballistic MOSFET 4) Scattering in nano-MOSFETs 5) Discussion 6) Summary

17

controlling current with energy barriers

electron energy vs. position
VGS VDS = 0.05 V

VDS = 1.0 V

E = qV
VGS

E.O. Johnson, The Insulated-Gate Field Effect Transistor: A Bipolar Transistor in Disguise, RCA 18 Review, 34, pp. 80-94, 1973.

top of the barrier MOSFET model

U = EC = EC 0 q S

energy

low drain bias:

EF1

device

EC (0 )

LDOS
L
contact 1 contact 2

EF 2
EC (x )

1 = 2 =
19

position

top of the barrier MOSFET model

U = EC (0 ) = EC 0 (0 ) q S

energy

high drain bias:

EF1

device

EC (0 )

EF 2
<< L
contact 1 contact 2

EC (x )

1 = 2 =
20

position

electron density
U = EC (0)
y

W
contact 1

x
contact 2

N = D (E U )( f1 + f2 )dE
m* Wl D = 2 2 h

f1 (E ) =

1 1 + e(EF1 EC (0)) kB T
21

f2 (E ) =

1 1 + e(EF1 qVDS EC (0)) kB T

electron density
N = D (E U )( f1 + f2 )dE
N N2D F 0 (F1 ) + F 0 (F 2 ) nS (0 ) = = 2 Wl
N 2 D = m * k BT h2

F1 [EF1 EC (0)] kB T
F 2 = F1 qVDS kBT
22

current
U = EC (0)
y

W
contact 1

x
contact 2

2q ID = D ( f1 f2 )dE h

h x = = l h
23

m* D = Wl 2 2 h

current (cont.)
U = EC (0)
y

W
contact 1

x
contact 2

h x = = l h

x = cos = 2 (E EC ) m* cos
x =

/2

/2

cos d =

2 (E EC ) 2 m*

24

current (cont.)
2q ID = D ( f1 f2 )dE h

h 2 (E EC ) 2 m* D (E ) = Wl * 2 l m 2 h

D (E ) = W

2m * (E EC )

= M (E )

W M (E) = ( 2 )

2q ID = M (E )( f1 f2 )dE h
25

current (final result)

2q ID = M (E )( f1 f2 )dE h

N2 D I D = Wq T F 1/ 2 (F1 ) F 1/2 (F 2 ) 2

N 2 D = m * k BT h2

F1 [EF1 EC (0)] kB T
F 2 = F1 qVDS kBT
26

T = 2kBT m*

re-cap

N2 D I D = Wq T F 1/ 2 (F1 ) F 1/2 (F 2 ) 2

(1)

N2 D F 0 (F1 ) + F 0 (F 2 ) nS (0 ) = 2
Solve (2) for N2D, then insert in (1):

(2)

27

I-V characteristic
F 1/2 (F1 ) F 1/2 (F 2 ) I D = WqnS (0 )T F 0 (F1 ) + F 0 (F 2 ) F 1/2 (F1 ) 1 F 1/2 (F 2 ) F 1/2 (F1 ) I D = WQI (0 )T F 0 (F1 ) 1 + F 0 (F 2 ) F 0 (F1 )

qnS (0 ) Cox (VGS VT )

(simple, 1D MOS electrostatics VGS > VT)

28

final result

1 - F 1/2 (F 2 ) F 1/2 (F1 ) % I D = WCox (VGS VT )T 1 + F 0 (F 2 ) F 10 (F1 )

% T

2k BT F 1/2 (F1 ) m * F 0 (F1 )

29

Boltzmann limit

F j (F ) e

1 - e qVDS / kB T I D = WCox (VGS VT )T 1 + e qVDS / kB T

T =

2kBT m*
30

on-current
1 - F 1/2 (F 2 ) F 1/2 (F1 ) % (VGS VT ) I D = WCoxT 1 + F 0 (F 2 ) F 10 (F1 )

% I D WCoxT (VDD VT )

I DS
% T 2kBT F 1/2 (F1 ) m* F 0 (F1 )
VGS = VDD

(100) [110] Si (single subband)

31

VDSAT k BT q

VDS

velocity saturation in a ballistic MOSFET

1 - F 1/2 (F 2 ) F 1/2 (F1 ) % I D = WCoxT (VGS VT ) = WQI (0) (0 ) 1 + F 0 (F 2 ) F 10 (F1 )

(0)
T
ballistic injection velocity

I DS
VGS = VDD

[EF1 EC (0)] q

VDS
32

VDS

channel resistance of a ballistic MOSFET

1 - F 1/2 (F 2 ) F 1/2 (F1 ) % (VGS VT ) I D = WCoxT 1 + F 0 (F 2 ) F 10 (F1 )

I DS
finite channel resistance
VGS = VDD

as T 0
GCH 2q 2 1 = M (EF1 ) h RCH
33

VDSAT k BT q

VDS

is a nanoscale MOSFET really ballistic?

Typical N-channel MOSFET:
I ON 1 mA/m
% I ON (ballistic ) = WQ I (0 ) T

QI (0) q = Cinv (VDD VT )

about 50% of the ballistic limit

0.8 1013 cm -2

T 1.8 10 7 cm/s
I ON W (ballistic ) 2 mA/m

(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)

about 10% of the ballistic limit.

34

outline

1) Introduction 2) Generic model of a nanodevice 3) The ballistic MOSFET 4) Scattering in nano-MOSFETs 5) Discussion 6) Summary

35

scattering in Si n-channel nano-MOSFETs

ID =

W nCox (VGS VT )VDS ? L

36

top of the barrier MOSFET model

(ballistic) low drain bias:
=
2 (E EC ) m
*

energy

(cos x + sin y )

EF1

device

EC (0 )

LDOS
L
contact 1 contact 2

EF 2
EC (x )

1 = 2 =
37

position

diffusive current
U = EC (0) W
contact 1

y
x

contact 2

L
2q ID = D ( f1 f2 )dE h
h x = = L h

ballistic

=
38

= ? diffusive

L2 = 2Dn

between ballistic and diffusive

h 1 h = = B +D 1+D B B

2 Dn (E) = 0 = 0 2 2
D = 0 + L 0
B D

T=

0 + L

0 1 - F 1/2 (F 2 ) F 1/ 2 (F1 ) % I D = WCox (VGS VT ) T 1 + F ( ) F ( ) 0 + L 0 F2 10 F1

39

linear-region current
Boltzmann statistics:

0 1 - e qVDS / kB T I D = WCox (VGS VT ) T 1 + eqVDS / kB T 0 + L

Low VDS:

0 T I D = WCox (VGS VT ) 2 (k T q )VDS 0 + L B

W ID = nCox (VGS VT )VDS L + 0

40

scattering in Si n-channel nano-MOSFETs

on-current

W W I D = n Cox (VGS VT )VDS I D = nCox (VGS VT )VDS L L + 0

41

where scattering matters (the most)

EC vs. x for VGS = 0.5V

EC vs. x for VGS = 0.5V

--->

EC (eV)

EC (eV)

--->

Increasing VDS

<< L
-10 -5 0 5 10

-10

-5

10

X (nm) --->

X (nm) --->

T=

0 + L

T=
42

0 + l

outline

1) Introduction 2) Generic model of a nanodevice 3) The ballistic MOSFET 4) Scattering in nano-MOSFETs

5) Discussion

6) Summary

43

Physics of Nanoscale Transistors

1) 2) 3) 4) 5) 6) 7) Review of MOSFET Fundamentals Elementary Theory of the Nanoscale MOSFET Theory of the Ballistic MOSFET Scattering in Nanoscale MOSFETs Application to State-of-the-Art MOSFETs Quantum Transport in Nanoscale MOSFETs Connection to the Bottom Up Approach

Mark Lundstrom

Electronics from the Bottom Up on nanoHUB.org

44

S/D quantum mechanical tunneling

4)

3)

2)

1)

45 from M. Luisier, ETH Zurich

generic model to NEGF Gate

EF1

HE [D(] [US)]

EF 2

[ ]/ [ ]
1

[ ]/ [ ]
2

S. Datta, Quantum Transport: Atom to Transistor, Cambridge, 2005 46 (Concepts of Quantum Transport nanohub.org)

randomness is the rule - not the exception! Random dopant fluctuations

side view

top view

nanonets
47

Percolation in Electronic Devices

1) Percolation in Electronic Devices 2) Thresholds, Islands, and Fractals 3) Nonlinear Electrical Conduction in Percolative Systems 4) Stick Percolation and Nanonet Electronics 5) 2D Nets in 3D World: Sensors, Solar Cells, and Antennas

M. Ashraf Alam
Electronics from the Bottom Up on nanoHUB.org
48

outline

1) Introduction 2) Generic model of a nanodevice 3) The ballistic MOSFET 4) Scattering in nano-MOSFETs 5) Discussion
6) Summary

49

summary

1) The bottom-up view provides a simple, but rigorous approach to nanoelectronics. 2) Its useful for familiar devices, like MOSFETs. 3) Its also a good starting point for new devices. 4) You can learn more on nanoHUB.org or by attending the annual Electronics from the Bottom Up summer schools at Purdue University.
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nanoHUB.org

Electronics from the Bottom Up

51

Questions & Answers

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