J.

Appenzeller
Purdue University & Birck Nanotechnology Center
West Lafayette, IN 47907
Purdue Summer School 2009, July 22
Graphene field-effect transistors
The materials impact
a
2
a
1
One layer of graphite (graphene)- different from graphite
8
0
-8
k
x
k
y
( )
F
E k v k =
The materials impact
8
0
-8
k
x
k
y
Graphene is a gapless semiconductor
2
2 2
2
( )
D lin
F
D E E
v

E
DOS
( )
F
E k v k =
Material Bulk
Mobility
Bandgap Effective
Mass
cm
2
/Vs eV m*/m
o
GaN 2,000
4
3.47
5
0.2
5
Si 1,400
1,3
1.12
1,2
0.19
1,2
Ge 3,900
1,3
0.661
1,2,3
0.082
1,2
GaAs 8,500
1,3
1.424
1,2,3
0.067
1,2,3
InGaAs 12,000
6
0.74
7
0.041
8
InAs 40,000
1
0.354
1,3
0.023
1,3
InSb 70,000
1,3
0.17
1,3
0.014
1,3
1 Handbook Series on Semiconductor Parameters,
Levinshtein et al., 1996.
2 Advanced Semiconductor Fundamentals, Pierret, 2003.
3 Compound Semiconductor Bulk Materials and Characterizations,
Oda, 2007.
4 Private communication, T. Sands, 2009.
5 Properties of Advanced Semiconductor Materials, Bougrov et al., 2001.
6 J.D. Oliver et al., J. Cryst. Growth, 54, 64 (1981).
7 K.-H. Goetz et al., J Appl. Phys., 54, 4543 (1983).
8 GaInAsP alloy semiconductors, John Wiley & Sons 1982.
The materials impact
Material Bulk
Mobility
Bandgap Effective
Mass
cm
2
/Vs eV m*/m
o
GaN 2,000
4
3.47
5
0.2
5
Si 1,400
1,3
1.12
1,2
0.19
1,2
Ge 3,900
1,3
0.661
1,2,3
0.082
1,2
GaAs 8,500
1,3
1.424
1,2,3
0.067
1,2,3
InGaAs 12,000
6
0.74
7
0.041
8
InAs 40,000
1
0.354
1,3
0.023
1,3
InSb 70,000
1,3
0.17
1,3
0.014
1,3
The materials impact
graphene 100,000
9
0 0
9 cond-mat 0805.1830v1 2008.
2
1
d tot
I C
L

The materials impact
2 2 *
dd
delay
d scatt
tot
V L L m
I
C

=
*
g
L m E const =
Direct tunneling probability from
source to drain (WKB) is constant if:
*
*
1 1
g
delay
g sc scat t t at
m
m E E

The materials impact

1
delay
g scatt
E

The materials impact

1
delay
g scatt
E

The quantum capacitance

impact:
0
0

f

g f

0
q ox
C C <<
ox q
C C <<
:
:
{
0
ox
f g
ox q
C
C C
=
+
C
q
C
ox
0
tot
q
f
Q
C e

ox q
tot
tot
g ox q
C C
Q
C e
C C

= =
+
2
2 q D
C e LW DOS

Advantages of 1D / 2D
but there is more
C
q
C
ox
classical limit
quantum capacitance limit
ox tot
C C
q tot
C C
2
~
L
C
I
tot
d
2
~ L
I
V C
d
dd tot
=
2
~ L
I
V C
d
dd tot
=
L C
q
~
ox
ox
t
L
C ~
diffusive:
2
~
tot
ox
L
P C V
t
=
2
~
tot
P C V L =
Advantages of the quantum capacitance limit
ox q
tot
tot
g ox q
C C
Q
C e
C C

= =
+
Graphene field-effect transistors
content not available at this time
Purdue Summer School 2009, July 22
improved electrostatics allows to
reduce the device length
body
ox body
ox
t t

=
Advantages of 1D / 2D
Nano allows for improved
electrostatics
Graphene and graphene nanoribbons are ultra-thin body
devices with a t
body
0.5nm
Advantages of 1D / 2D
Advantages of graphene and
graphene nanoribbons
8
0
-8
k
x
k
y
300nm
reduced scattering
top-down approach
ultra-thin body
1:1 band movement
improved scaling
Switching in graphene versus carbon nanotubes
The energy dependence of the
density of states is the key for
current modulation in G-FETs
Graphene field-effect transistors
content not available at this time
Purdue Summer School 2009, July 22
2
1
2 2
ln 1 exp
gs
B
gs
B
eV
ek T e
I V
h h k T
| |
(
= + +
|
(
|

\ .
Source to drain through conduction band:
(1)
Note: In our calculations, we will consider only one k
F
-point.
All currents need to be multiplied by 2 for carbon nanotubes.
One-dimensional transport in the QCL limit
( ) ( ) ( ) ( )
1 1
,
gs
D s
eV
I e dE D E v E f E T

2
1
2 2
ln 1 exp
gs
B
gs
B
eV
ek T e
I V
h h k T
| |
(
= + +
|
(
|

\ .
Source to drain through conduction band:
2 2
2
2 2 2
ln 1 exp
gs
ds B
ds gs
B B
eV
eV ek T e e
I V V
h h h k T k T
| |
(
= +
|
(
|

\ .
Drain to source through conduction band:
(1) (2)
One-dimensional transport in the QCL limit
One-dimensional transport in the QCL limit
2 2
3
2 2 2
2
ln 1 exp
ds gs
gs
ds B
B
g
B B
g
e e e
I V V
h h h
eV
eV ek T
h k
E
T k T
E
T k
=
| |
(
+ + +
|
(
|

\ .
Drain to source through valence band:
Source to drain through valence band:
2
4
2 2 2
ln 1 exp
gs
B
gs
B
g
B
g
eV
ek T e e
I V
h h h k
E
E
T k T
| |
(
= + + +
|
(
|

\ .
(1) (2)
(3) (4)
One-dimensional transport in the QCL limit
One-dimensional transport in the QCL limit
Contributions from I
1
to I
4
2 2
3
2 2 2
2
ln 1 exp
ds gs
gs
ds B
B
g
B B
g
e e e
I V V
h h h
eV
eV ek T
h k
E
T k T
E
T k
=
| |
(
+ + +
|
(
|

\ .
Drain to source through valence band:
Source to drain through valence band:
2
4
2 2 2
ln 1 exp
gs
B
gs
B
g
B
g
eV
ek T e e
I V
h h h k
E
E
T k T
| |
(
= + + +
|
(
|

\ .
(1) (2)
(3) (4)
One-dimensional transport in the QCL limit
One-dimensional transport in the QCL limit
E
g
-dependence of output characteristics
One-dimensional transport in the QCL limit
CNFET with E
g
=0.1eV
Graphene field-effect transistors
content not available at this time
Purdue Summer School 2009, July 22
1D and 2D transport in the QCL limit
CNFET with E
g
=0.1eV G-FET with E
g
=0eV
One-dimensional transport in the QCL limit
( )
2
1
tot g ds s Th d
C V
L
V I V =
On the operation of different FETs
Silicon MOSFET (with gap)
( )
d gs
Q I V
| |
1
( , ) ( , ( ) ) ( )
s d D d
Vgs
f I e dE D E T f E T E v E =

Carbon nanotube FET (with gap)

| |
( , ) ( , )
d
V
s d
gs
f E T f I E E T d

Graphene FET (without gap)

| |
2
( ) ( , ) ( , ( ) )
D d s d
Vgs
I e L dE v E D f E E T f E T =

2
( )
D d
Vgs
D E I dE

Silicon nanowire FET Carbon nanotube FET

(with gap)
Graphene FET
(without gap)
( )
d gs
Q I V
| |
( , ) ( , )
d
V
s d
gs
f E T f I E E T d

2
( )
D d
Vgs
D E I dE

On the operation of different FETs

The quantum capacitance
Large area graphene devices
for quantum capacitance
characterization
Graphene field-effect transistors
content not available at this time
Purdue Summer School 2009, July 22
Sample fabrication
AFM height: 0.4nm
1m
Single layer graphene through peeling
IEDM Technical Digest, 509 (2008)
Graphene capacitance measurements
Similar I
d
-V
gs
are obtained for single and multi-layer graphene
IEDM Technical Digest, 509 (2008)
Graphene capacitance measurements
C
q
~ DOS
E
2 2
2
graphene
F
E
DOS

=

2
2
multi graphene
m
DOS

However, C-V
gs
characteristics are very different
IEDM Technical Digest, 509 (2008)
Graphene capacitance measurements
Including a trap capacitance contribution allows to
Graphene capacitance measurements
extract the quantum capacitance C
q
IEDM Technical Digest, 509 (2008)
Graphene capacitance measurements
Scaled graphene devices will operate in the QCL!
C
ox
(2nm Al2O3)
Graphene mobility
Intrinsic and extrinsic
contributions in graphene
devices
Graphene device characteristics
short channel characteristics long channel characteristics
mobility extraction from g
m
carrier concentration in g
m
- region: n
s
~10
12
cm
-3
2
0
ds m ox
gs ox ds ds r
I g d L
V C V WV
L

= =

Graphene device characteristics

Mobility decrease
is evidence of
transition into the
ballistic transport
regime
( )
1
) (
ox ox
gs th ds gs th inj
C C
I V V V V
L L
V
L L

= =
+
0
L
L

=
+
Graphene device characteristics
( )
0 ( )
ds ox
ball gs th inj
ball
V C
I L V V
R L
= =
Graphene device characteristics
Graphene device characteristics
0
0
/(1 )
c
a L
L L
R

= +
+ +
300
c
R m =
( )
o
gs th
ox
W
a V V
d

=
300nm =
IEDM Technical Digest, 509 (2008)
Summary
Graphene devices can operate in the
quantum capacitance regime
Graphene offers a number of intrinsic
materials related properties that make
it particularly suited for electronic applications
Contact effects need to be considered in
graphene even in the absence of a bandgap