MegaMOSTM IRFP 460 VDSS = 500 V

Power MOSFET ID(cont) = 20 A

RDS(on) Ω
= 0.27Ω
N-Channel Enhancement Mode, HDMOSTM Family

Symbol Test Conditions Maximum Ratings TO-247 AD

VDSS TJ = 25°C to 150°C 500 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V
VGS Continuous ±20 V D (TAB)
VGSM Transient ±30 V
ID25 TC = 25°C 20 A
G = Gate, D = Drain,
IDM TC = 25°C, pulse width limited by TJM 80 A S = Source, TAB = Drain
IAR 20 A
EAR TC = 25°C 28 mJ
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 3.5 V/ns
TJ ≤ 150°C, RG = 2 Ω
Features
PD TC = 25°C 260 W l Repetitive avalanche energy rated
TJ -55 ... +150 °C l Fast switching times
l Low RDS (on) HDMOSTM process
TJM 150 °C l Rugged polysilicon gate cell structure
T stg -55 ... +150 °C l High Commutating dv/dt Rating
Md Mounting torque 1.15/10 Nm/lb.in.
Weight 6 g Applications
Maximum lead temperature for soldering 300 °C l Switching Power Supplies
1.6 mm (0.062 in.) from case for 10 s l Motor controls

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)
min. typ. max.

VDSS VGS = 0 V, ID = 250 µA 500 V

VGS(th) VDS = VGS, ID = 250 µA 2 4 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = 0.8 • VDSS TJ = 25°C 25 µA

VGS = 0 V TJ = 125°C 250 µA

R DS(on) VGS = 10 V, ID = 12 A 0.25 0.27 Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXYS reserves the right to change limits, test conditions, and dimensions. 92825D (5/98)
© 2000 IXYS All rights reserved 1-4
 IRFP 460

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) TO-247 AD Outline
min. typ. max.

gfs VDS = 10 V; ID = 12 A, pulse test 13 21 S

Ciss 4200 pF 1 2 3

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 450 pF

Crss 135 pF

t d(on) 23 35 ns
tr VGS = 10 V, VDS = 250 V, ID = 20 A 81 120 ns
td(off) RG = 4.3 Ω, (External) 85 130 ns Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
tf 65 98 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
Q g(on) 135 210 nC
A 4.7 5.3 .185 .209
Q gs VGS = 10 V, VDS = 200 V, ID = 20 A 28 40 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Q gd 62 110 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
R thJC 0.45 K/W b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
R thCK 0.25 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values
∅ P 3.55 3.65 .140 .144
(TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IS VGS = 0 V 20 A

ISM Repetitive; pulse width limited by TJM 80 A

VSD IF = 20 A, VGS = 0 V, 1.8 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

t rr IF = 20 A, -di/dt = 100 A/µs, VR = 100 V 570 860 ns

Q rr 5.7 µC

© 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
2-4
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
 IRFP 460

50
VGS=10V
TJ = 25OC VGS=10V
9V TJ = 125OC
9V
8V 30 8V
40 7V
7V
6V 6V
ID - Amperes

ID - Amperes
30
20

20 5V
5V
10
10

0 0
0 4 8 12 16 20 0 4 8 12 16 20
VDS - Volts VDS - Volts

Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC

2.8 6
VGS = 10V VGS = 10V

2.4 5
RDS(ON) - Normalized

Tj=1250 C RDS(ON) - Normalized

ID = 24A
2.0 4

1.6 3
Tj=250 C
ID = 12A
1.2 2

0.8 1
0 10 20 30 40 50 25 50 75 100 125 150

ID - Amperes TJ - Degrees C

Figure 3. RDS(on) normalized to value at ID = 12A Figure 4. RDS(on) normalized to value at ID = 12A

25
24

20 20
ID - Amperes

ID - Amperes

16
15

12
10 TJ = 125oC
8
5 TJ = 25oC
4

0
0
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8
TC - Degrees C VGS - Volts
Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

© 2000 IXYS All rights reserved 3-4

 IRFP 460

12 5000
Ciss
VDS = 400V
10 ID = 15A 2500
f = 1MHz

Capacitance - pF
8
VGS - Volts

Coss
1000
6
500
4 Crss
250
2

0 100
0 50 100 150 200 0 5 10 15 20 25

Gate Charge - nC VDS - Volts

Figure 7. Gate Charge Figure 8. Capacitance Curves

50 100

40
0.1ms
10
ID - Amperes

ID - Amperes

30
1ms
TJ = 125OC

20 10ms
TJ = 25OC 1
TC = 25OC 100ms
10 DC

0 0.1
0.2 0.4 0.6 0.8 1.0 1.2
10 100 500
VSD - Volts
VDS - Volts
Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area

1
R(th)JC - K/W

Single pulse
0.1

0.01
10-4 10-3 10-2 10-1 100 101

Pulse Width - Seconds

Figure 11. Transient Thermal Resistance

© 2000 IXYS All rights reserved 4-4