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FDFS2P102A

August 2001

FDFS2P102A
Integrated P-Channel PowerTrench MOSFET and Schottky Diode
General Description
The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Features
3.3 A, 20V RDS(ON) = 125 m @ VGS = 10 V RDS(ON) = 200 m @ VGS = 4.5 V VF < 0.39 V @ 1 A (TJ = 125C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET pinout for design flexibility

D C C

A 1 A 2
G

8 C 7 C 6 D 5 D

S 3 G 4

SO-8
Pin 1

S A A

Absolute Maximum Ratings


Symbol
VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current Continuous Pulsed

TA=25oC unless otherwise noted

Parameter

Ratings 20
20
(Note 1a)

Units
V V A W

3.3 10
2 1.6 1 0.9

Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)

TJ, TSTG VRRM IO

Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current
(Note 1a)

55 to +150
20 1

C V A

Package Marking and Ordering Information


Device Marking FDFS2P102A Device FDFS2P102A Reel Size 13 Tape width 12mm Quantity 2500 units

2001 Fairchild Semiconductor Corporation

FDFS2P102A Rev A1(W)

FDFS2P102A

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 20 V, VGS = 20 V, VGS = 0 V VDS = 0 V VDS = 0 V

Min
20

Typ

Max Units
V

Off Characteristics
23 1 100 100 1 1.8 4.4 96 152 137 10 4.6 182 60 24 5 14 11 2 VDS = 10 V, VGS = 5 V ID = 3.3 A, 2.1 1.0 0.6 1.3
(Note 2)

mV/C A nA nA V mV/C 125 200 190 m

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 3.3 A VGS = 4.5 V, ID = 2.5 A VGS=10 V, ID =3.3A, TJ=125C VGS = 10 V, VDS = 5 V VDS = 5V, ID = 3.3 A

ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD IR VF

A S pF pF pF 10 52 20 4 3.0 ns ns ns ns nC nC nC A V A mA V

Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,

Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 10 V, VGS = 10 V,

ID = 1 A, RGEN = 6

DrainSource Diode Characteristics and Maximum Ratings


Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage Reverse Leakage Forward Voltage VGS = 0 V, VR = 20 V IF = 1 A IF = 2 A IS = 1.3 A 0.8 1.2 50 18 0.47 0.39 0.58 0.53

Schottky Diode Characteristics


TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C

FDFS2P102A Rev A1(W)

FDFS2P102A

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

78 40

C/W C/W

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a)

78C/W when mounted on a 2 0.5in pad of 2 oz copper

b)

125C/W when mounted on a 0.02 in2 pad of 2 oz copper

c)

135C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDFS2P102A Rev A1(W)

FDFS2P102A

Typical Characteristics

10 -ID, DRAIN-SOURCE CURRENT (A) -7.0V -6.0V -5.0V -4.5V -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V 8

2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 5 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) - ID, DRAIN CURRENT (A) -4.5V -5.0V -6.0V -7.0V -10V

VGS = -4.0V

-3.5V

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.


0.52 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -3.3A VGS = -10V

0.46 0.4 0.34 0.28 0.22 0.16 0.1 0.04 TA = 25oC TA = 125oC

ID = -1.7A A

1.4

1.2

0.8

0.6 -50 -25 0 25 50 75 100


o

125

150

10

TJ, JUNCTION TEMPERATURE ( C)

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.


10 VDS = -5V -ID, DRAIN CURRENT (A) 8 25oC 125oC 6 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.


100 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC VGS = 0V

0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDFS2P102A Rev A1(W)

FDFS2P102A

Typical Characteristics

10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.3A 8 -15V 6 VDS = -5V -10V CAPACITANCE (pF)

300 250 CISS 200 150 100 50 CRSS 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V

COSS

Figure 7. Gate Charge Characteristics.


IR, REVERSE LEAKAGE CURRENT (A)

Figure 8. Capacitance Characteristics.

IF, FORWARD LEAKAGE CURRENT (A)

10 TJ = 125oC 1 TJ = 25oC 0.1

1.0E-02 TJ = 125oC 1.0E-03 1.0E-04 1.0E-05 1.0E-06 1.0E-07 0 5 10 15 20 VR, REVERSE VOLTAGE (V) TJ = 25oC

0.01

0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V)

Figure 9. Schottky Diode Forward Voltage.


1
D = 0.5

Figure 10. Schottky Diode Reverse Current.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

R JA (t) = r(t) + R JA R JA = 135 C/W P(pk) t1


0.05 0.02 0.01 SINGLE PULSE

0.2

0.1

0.1

t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2

0.01 0.001

0.01

0.1

1 t 1 , TIME (sec)

10

100

1000

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDFS2P102A Rev A1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC

OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START

STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX

STAR*POWER is used under license

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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H3