TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor

November 2008

TIP47/TIP48/TIP49/TIP50
NPN Silicon Transistor
High Voltage and Switching Applications High Sustaining Voltage : VCEO(sus) = 250 - 400V 1A Rated Collector Current

TO-220 2.Collector 3.Emitter

1.Base

Absolute Maximum Ratings*

Symbol VCBO Collector-Base Voltage

T a = 25C unless otherwise noted

Parameter : TIP47 : TIP48 : TIP49 : TIP50 : TIP47 : TIP48 : TIP49 : TIP50

Ratings 350 400 450 500 250 300 350 400 5 1 2 0.6 40 2 150 - 65 ~ 150

Units V V V V V V V V V A A A W W C C

VCEO

Collector-Emitter Voltage

VEBO IC ICP IB PC TJ TSTG

Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 1

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TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor

Electrical Characteristics* Ta=25C unless otherwise noted

Symbol VCEX(sus) Parameter Collector-Emitter Sustaining Voltage : TIP47 : TIP48 : TIP49 : TIP50 Collector Cut-off Current : TIP47 : TIP48 : TIP49 : TIP50 Collector Cut-off Current : TIP47 : TIP48 : TIP49 : TIP50 Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Test Condition IC = 30mA, IB = 0 Min. 250 300 350 400 1 1 1 1 1 1 1 1 1 30 10 150 1 1.5 10 V V MHz Typ. Max. Units V V V V mA mA mA mA mA mA mA mA mA

ICEO

VCE = 150V, IB = 0 VCE = 200V, IB = 0 VCE = 250V, IB = 0 VCE = 300V, IB = 0 VCE = 350V, VBE = 0 VCE = 400V, VBE = 0 VCE = 450V, VBE = 0 VCE = 500V, VBE = 0 VEB = 5V, IC = 0 VCE = 10V, IC = 0.3A VCE = 10V, IC = 1A IC = 1A, IB = 0.2A VCE = 10V, IC = 1A V CE =10V, IC = 0.2A, f = 1MHz

ICEX

IEBO hFE VCE(sat) VBE(sat) fT

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 2

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TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor

Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000

10

VCE = 10V

IC = 5 IB

hFE, DC CURRENT GAIN

100

VBE (sat)

VCE (sat)
0.1

10

1 0.01

0.1

0.01 0.01

0.1

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage

10

50

PC[W], POWER DISSIPATION

IC[A], COLLECTOR CURRENT

40

s 0m 10 ms 500

30

s 1m

C D.

20

0.1

0.01

TIP47 TIP48 TIP49 TIP50

1 10 100 1000

10

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area

Figure 4. Power Derating

2007 Fairchild Semiconductor Corporation TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 3

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TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor

Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation TIP47/TIP48/TIP49/TIP50 Rev. 1.0.0 4

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TIP47/TIP48/TIP49/TIP50 TIP47/TIP48/TIP49/TIP50 NPN Silicon Transistor

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2008 Fairchild Semiconductor Corporation TIP47/TIP48/TIP49/TIP50 Rev. A1 5

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