Semiconductor

STK0825F
Advanced Power MOSFET

DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features

High Voltage: BVDSS=250V(Min.) Low Crss : Crss=13pF(Typ.) Low gate charge : Qg=15nC(Typ.) Low RDS(on) :RDS(on)=0.43(Max.)
Type NO. STK0825F Marking STK0825 Package Code TO-220F-3L

Ordering Information

Outline Dimensions
3.05~3.35 9.80~10.20

unit : mm
2.60~3.00

15.40~15.80

12.20~12.60

9.10~9.30

12.40~13.00

1.07 Min. 0.90 Max. 0.60 Max.

2.54 Typ.

2.54 Typ.

0.60 Max.

3.46 Typ.

4.70 Max.

2.70 Max.

PIN Connections 1. Gate 2. Drain 3. Source

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STK0825F
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed)
*

(Tc=25C)

Symbol
VDSS VGSS ID (Tc=25) (Tc=100) IDM PD IAS EAS IAR EAR TJ Tstg

Rating
250 30 8 5.6 32 25 8 285 8 7.4 150 -55~150

Unit
V V A A A W A mJ A mJ C

Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* Limited by maximum junction temperature

Characteristic
Thermal resistance Junction-case Junction-ambient

Symbol
Rth(J-C) Rth(J-a)

Typ.
-

Max
5.0 62.5

Unit
/W

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STK0825F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge

(Tc=25C)

Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd

Test Condition
ID=250A, VGS=0 ID=250A, VDS= VGS VDS=250V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=4.0A VDS=10V, ID=4.0A VGS=0V, VDS=25V, f=1MHz

Min.
250 2.0 -

Typ.
0.35 4.2 510 76 13 15 85 90 65 15 3 6

Max.
4.0 1 100 0.43 770 120 20 23 5 9

Unit
V V A nA S pF

VDD=125V, ID=8A RG=25

VDS=125V, VGS=10V ID=8A

ns

nC

Source-Drain Diode Ratings and Characteristics

Characteristic
Source current Source current(Plused) Forward voltage Reverse recovery time Reverse recovery charge

(Tc=25C)

Symbol
IS ISM VSD trr Qrr

Test Condition
Integral reverse diode in the MOSFET VGS=0V, IS=8A Is=8A, VGS=0, diS/dt=100A/us

Min
-

Typ
222 1.45

Max
8 32 1.4 -

Unit
A V ns uC

Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=5.9mH, IAS=8A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature

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Electrical Characteristic Curves
Fig. 1 ID - VDS

Fig. 2 ID - VGS

Fig. 3 RDS(on) - ID

Fig. 4 IS - VSD

Fig. 5 Capacitance - VDS

Fig. 6 VGS - QG

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Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ

Fig. 9 ID - TC

Fig. 10 Safe Operating Area

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Fig. 11 Gate Charge Test Circuit & Waveform

Fig. 12 Resistive Switching Test Circuit & Waveform

Fig. 13 EAS Test Circuit & Waveform

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Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

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The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.

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