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Rohit Singh M.Tech (VST) Shiv Nadar University
What is an LED?
Light-emitting diode Semiconductor Has polarity
Negative electrons move one way and positive holes move the other way
The color of the light is determined by the fall of the electron and hence energy level of the photon
E=hc/
1.240 ( m) E g (eV)
Kinds of LEDs
Stimulated Emission
E2 h h E2 h In E2 h Out h E1 E1 E1
(a) Absorption
In stimulated emission, an incoming photonemission andh Absorption, spontaneous (random photon) with energy stimulated emission. stimulates the emission process by inducing electrons in E2 to transit down to E1.Kasap, Optoelectronics (Prentice Hall) 1999 S.O. While moving down to E1, photon of the same energy h will be emitted Resulting in 2 photons coming out of the system Photons are amplified one incoming photon resulting in two photons coming out.
Population Inversion
Non equilibrium distribution of atoms among the various energy level atomic system To induce more atoms in E2, i.e. to create population inversion, a large amount of energy is required to excite atoms to E2 The excitation process of atoms so N2 > N1 is called pumping It is difficult to attain pumping when using two-level-system. Require 3-level system instead
N2> N1 N2
E2
N1
E1
E3 E2
E1
Principles of Laser
E h 1 3
3
h 3 2
3
E
Metastable state
IN
OUT
h 2 1 E
h 2 1 E
Coherent photons
1
E ( a)
(b )
(c)
(d )
In actual case, excite atoms from E1 to E3. Exciting atoms from E1 to E3 optical pumping . Atoms from E3 decays rapidly to E2 emitting h3 If E2 is a long lived state, atoms from E2 will not decay to E1 rapidly Condition where there are a lot of atoms in E2 population inversion achieved! i.e. between E2 and E1.
p+ E c E E Ev Fp g Holes in VB Electrons
E
E c eV
Fn
E Electrons in CB E Fn c
E E ( a)
Fp
(b)
P-n junction must be degenerately doped. Fermi level in valance band (p) and conduction band (n). No bias, built n potential; eVo barrier to stop electron and holes movement
Forward bias, eV> Eg Built in potential diminished to zero Electrons and holes can diffuse to the space charge layer
EFn eV Eg EFp
EFn-EfP = eV eV > Eg eV = forward bias voltage Fwd Diode current pumping injection pumping
Holes in VB VB
There is therefore a population inversion between energies near EC and near EV around the junction. This only achieved when degenerately doped p-n junction is forward bias with energy > Egap
Thank You !