MOS CAPACITANCES

Praveen Aggarwal, Assistant Professor, ECE Department, BBDIT Ghaziabad.

MOSFET CAPACITANCES
No. of capacitances are found as function of:
Layout geometry. Fabrication process. Most of them are distributed in nature and exact calculation is complex. Thus one needs some simple model for hand calculation.

Two types of capacitances : Device related. Interconnect related.

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Device related parasitic capacitances:

LEFF = Lm 2 LD(0.1m)
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MOSFET CAPACITANCES (contd. )

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MOSFET CAPACITANCES (contd. ) OXIDE Capacitances :

Cox = ox / tox
1. Overlap Caps :

CGS0 = Cox W LD CGD0 = Cox W LD CGB0 = Cox Wov L

Do not depend upon bias condition. Voltage Independent.

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MOSFET CAPACITANCES (contd. )

2. Gate-channel Capacitances:

Three Cgs, Cgd, Cgb.

Cgb : distributed and voltage dependent in real life. Cgs : gate-to-channel capacitance between gate and source terminal. Cgd : gate-to-channel capacitance between gate and drain terminal.
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Gate-channel Caps (contd. )

These caps are bias dependent Cgs, Cgd, Cgb.

To calculate them consider three biasing region.

1. CUT-Off Region: no inversion, S/D not connected. Cgb = Cox W L. Cgs = Cgd = 0.
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Gate-channel Caps (contd. )

2. Linear- Region: inversion layer exists and shields the bulk from gate electric field. Cgb = 0. Cgs = Cgd =

= Cox W L.
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Gate-channel Caps (contd. )

3. Saturation- Region: inversion is not upto drain. Source is connected to channel and shielded from bulk.

Cgb = cgd = 0.
Cgs = 2/3 Cox W L.

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Total Oxide Caps (contd. )

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Total Oxide Caps (contd. )

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Junction Capacitances
Csb and Cdb source-substrate and drain-substrate caps. Exists because of depletion region embedded in the bulk. Voltage dependent and is function of applied terminal voltage.

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Junction Capacitances (contd.)

Simplified picture of diffusion to calculate Caps. Abrupt junction is assumed for simplicity. 2,3,4 junctions are surrounded by sidewall. 1 is facing channel and 5 is bottom jn and facing bulk.

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Junction Capacitances (contd.)

P+ is 10 x NA thus caps associated with this are different than other junction caps.

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Junction Capacitances (contd.)

Reverse biased N+P junctions depletion layer width caculation. NA and ND doping densities and applied voltage is V.

V is External Potential
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Junction Capacitances (contd.)

The charge stored in this area and capacitance are

The final expression for Cj is

Cj(V) = A Cj0 / ( 1- V/ 0 )m where

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Junction Capacitances (contd.)

This junction capacitance depends upon biasing. With changing bias its estimation is difficult. Thus large signal average junction cap, known as equivalent cap, is calculated between two known voltages.

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Junction Capacitances (contd.)

Sidewall Junction Capacitancs.

Zero-bias Sidewall cap per unit length is

Since all sidewalls have junction depth Xj.

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Junction Capacitances (contd.)

Again one has to calculate equivalent large signal Sidewall Junction Capacitances.

P is equal to sum of three sides.

Total junction capacitance is equal to

Cdb = A Cj0 Keq + P Cj0sw Xj Keqsw

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EXAMPLE
Calculate the total junction capacitance at drain side for NMOST. Given :

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EXAMPLE
Assume Bulk is at zero-bias and drain voltage varies from 0.5V to 5V.

Solution : Cdb = A Cj0 Keq + P Cj0sw Xj Keqsw

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EXAMPLE

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EXAMPLE

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EXAMPLE

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EXAMPLE

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