FET

SJTU J.
Chen 1 2013/9/13
Chapter 5
Field-Effect Transistors (FETs)
2013/9/13 SJTU J. Chen
2
Content
Physical operation and current-voltage
characteristics
Structure & construction
Physical operation and
characteristics
N- CHANNEL JFET
FET ( Field Effect Transistor)
1. Unipolar device i. e. operation depends on only one
type of charge carriers.
2. Voltage controlled Device (gate voltage controls drain
current)
3. Very high input impedance (~10
9
-10
12
O)
4. Source and drain are interchangeable in most Low-
frequency applications
5. Low Voltage Low Current Operation is possible (Low-
power consumption)
6. Less Noisy as Compared to BJT
7. No minority carrier storage (Turn off is faster)
8. Self limiting device
9. Very small in size, occupies very small space in ICs
10. Low voltage low current operation is possible in
MOSFETS
Few important advantages of FET over
conventional Transistors
5
FET: Field Effect Transistor
There are two types
MOSFET: metal-oxide-semiconductor FET
JFET: Junction FET
MOSFET is also called the insulated-gate FET or
IGFET.
Quite small
Simple manufacturing process
Low power consumption
Widely used in VLSI circuits(>800 million on a single IC chip)
Introduction to FET
6
The direction of
The channel is an inversion
layer
The value of V
GS
at which a
sufficient number of mobile
electrons accumulate to form a
conducting channel is called the
threshold voltage (V
t

P-CHANNEL JFET
Gate
Drain
Source
7
L = 0.1 to 3 m
W = 0.2 to 100 m
T
ox
=2 to 50 nm
P-CHANNEL CHARACTERISTICS
Cross-section view

8
According to the type of the channel, FETs can
be classified as
MOSFET
N channel

P channel

JFET
P channel

N channel

Classification of FET
Enhancement type
Depletion type
Enhancement type
Depletion type
9
Drain current under small voltage v
DS
An NMOS transistor with v
GS
> V
t
and with a small v
DS

applied.
The channel depth is uniform and the device acts as a
resistance.
The channel conductance is
proportional to effective voltage,
or excess gate voltage, (v
GS
V
t
) .
Drain current is proportional to
(v
GS
V
t
) and v
DS
.
10

Drain current under small voltage v
DS
11
The induced channel acquires a tapered shape.
Channel resistance increases as v
DS
is increased.
Drain current is controlled by both of the two voltages.
Operation as v
DS
is increased
B
12
When V
GD
= V
t
or V
GS
- V
DS
= V
t
, the channel is
pinched off
Inversion layer disappeared at the drain point
Drain current does not disappeared!
Channel pinched off
13
Drain current under pinch off
The electrons pass through the pinch off area at very
high speed so as the current continuity holds, similar to
the water flow at the Yangtze Gorges
Pinched-off channel
14
Drain current is saturated and only controlled by
the v
GS
Drain current under pinch off
15
v
GS
creates the channel.
Increasing v
GS
will increase the conductance of
the channel.
At saturation region only the v
GS
controls the
drain current.
At subthreshold region, drain current has the
exponential relationship with v
GS

Drain current controlled by v
GS
16
Two reasons for readers to be
familiar with p channel device
p channel device

Existence in discrete-circuit.
More important is the
utilization of complementary
MOS or CMOS circuits.
17
Structure of p channel device
The substrate is n type and the inversion layer is p type.
Carrier is hole.
Threshold voltage is negative.
All the voltages and currents are opposite to the ones of n
channel device.
Physical operation is similar to that of n channel device.
p channel device
18
The PMOS transistor is formed in n well.
Another arrangement is also possible in which an n-type body is used and
the n device is formed in a p well.
CMOS is the most widely used of all the analog and digital IC circuits.
Complementary MOS or CMOS
19
Circuit symbol
Output characteristic curves
Channel length modulation
Characteristics of p channel device
Body effect
Temperature effects and Breakdown Region
Current-voltage characteristics
20
(a) Circuit symbol for the n-channel enhancement-type MOSFET.
(b) Modified circuit symbol with an arrowhead on the source terminal to
distinguish it from the drain and to indicate device polarity (i.e., n channel).
(c) Simplified circuit symbol to be used when the source is connected to the
body or when the effect of the body on device operation is unimportant.
Circuit symbol
21
(a) An n-channel enhancement-
type MOSFET with v
GS
and v
DS

applied and with the normal
directions of current flow
indicated.
(b) The i
D
v
DS
characteristics for a
device with k
n
(W/L) = 1.0
mA/V
2
.
Output characteristic curves of NMOS
22
Three distinct region
Cutoff region
Triode region
Saturation region
Characteristic equations
Circuit model
Output characteristic curves of NMOS
23
Biased voltage

The transistor is turned off.

Operating in cutoff region as a switch.

t GS
V v <
0 =
D
i
Cutoff region
24
Biased voltage

The channel depth changes from uniform to tapered
shape.
Drain current is controlled not only by v
DS
but also
by v
GS

t GS DS
t GS
V v v
V v
<
>
DS t GS n
DS DS t GS n D
v V v
L
W
k
v v V v
L
W
k i
) ( '
2
1
) ( '
2
~
(
=
Triode region
process transcon-
ductance parameter
25
Assuming that the draint-source voltage is
sufficiently small, the MOS operates as a linear
resistance

OV n
t GS n
V v
D
DS
DS
V
L
W
k
V V
L
W
k
i
v
r
GS GS
'
1
) ( '
1
=
=
=
Triode region
26
Biased voltage

The channel is pinched off.
Drain current is controlled only by v
GS

Drain current is independent of v
DS
and behaves as
an ideal current source.

t GS DS
t GS
V v v
V v
>
>
2
2
1
) '
t GS n D
V v
L
W
k i =
Saturation region
27
The i
D
v
GS
characteristic for
an enhancement-type NMOS
transistor in saturation
V
t
= 1 V, k
n
W/L = 1.0
mA/V
2

Square law of i
D
v
GS

characteristic curve.
Saturation region
28
Explanation for channel length modulation
Pinched point moves to source terminal with the
voltage v
DS
increased.
Effective channel length reduced
Channel resistance decreased
Drain current increases with the voltage v
DS

increased.
Current drain is modified by the channel
length modulation

) 1 ) '
2
2
1
DS t GS n D
v V v
L
W
k i =
29
The MOSFET parameter V
A
depends on the process technology and, for a
given process, is proportional to the channel length L.
30
MOS transistors dont behave an ideal current
source due to channel length modulation.
The output resistance is finite.

The output resistance is inversely proportional to
the drain current.

D
A
D
const v
DS
D
o
I
V
I v
i
r
GS
= =
(
c
c
1
.
1
31
Large-signal equivalent circuit model of the n-channel
MOSFET in saturation, incorporating the output resistance
r
o
. The output resistance models the linear dependence of i
D

on v
DS

Large-signal equivalent circuit model
32
(a) Circuit symbol for the p-channel enhancement-type MOSFET.
(b) Modified symbol with an arrowhead on the source lead.
(c) Simplified circuit symbol for the case where the source is connected to the
body.
33
The MOSFET with voltages applied and the directions of
current flow indicated.
The relative levels of the terminal voltages of the
enhancement-type PMOS transistor for operation in the triode
region and in the saturation region.
34
Large-signal equivalent circuit model of the p-channel
MOSFET in saturation, incorporating the output resistance
r
o
. The output resistance models the linear dependence of i
D

on v
DS
35
In discrete circuit usually there is no body effect due
to the connection between body and source terminal.
In IC circuit the substrate is connected to the most
negative power supply for NMOS circuit in order to
maintain the pn junction reversed biased.
The body effect---the body voltage can control i
D
Widen the depletion layer
Reduce the channel depth
Threshold voltage is increased
Drain current is reduced

The body effect can cause the performance
degradation.
The body effect
36
Temperature effects and breakdown region
Drain current will decrease when the
temperature increase.
Breakdown
Avalanche breakdown
Punched-through
Gate oxide breakdown

2
2
1
) '
t GS n D
V v
L
W
k i =
SJTU J. Chen 37 2013/9/13
DC analysis
Biasing in MOS amplifier circuit and basic
configuration
38
1. Assuming device operates in saturation thus i
D

satisfies with i
D
~v
GS
equation.
2. According to biasing method, write voltage loop
equation.
3. Combining above two equations and solve these
equations.
4. Usually we can get two value of v
GS
, only the one of
two has physical meaning.
MOSFET amplifier: DC analysis
39
5. Checking the value of v
DS
i. if v
DS
v
GS
-V
t
, the assuming is correct.
ii. if v
DS
v
GS
-V
t
, the assuming is not correct. We shall
use triode region equation to solve the problem
again.
DC analysis
40
The NMOS transistor is
operating in the saturation
region due to

t GD
V V <
Examples of DC analysis
t
V 2V =
41
Assuming the MOSFET operate in the saturation region
Checking the validity of the assumption
If not to be valid, solve the problem again for triode region
Examples of DC analysis
42
The MOSFET as an amplifier
Graph determining the
transfer characteristic
of the amplifier
Basic structure of the
common-source amplifier
43
The MOSFET as an amplifier and as a switch
v
i
Time
v
I
Time
v
o
Transfer characteristic
showing operation as an
amplifier biased at point Q.
Three segments:
XA---the cutoff region
segment
AQB---the saturation
region segment
BC---the triode region
segment
44
Voltage biasing scheme
Biasing by fixing voltage
(constant V
GS
)
Biasing with feedback
resistor
Current-source biasing
scheme
Biasing in MOS amplifier circuits
Disadvantage of fixing biasing
Fixing biasing may result in large I
D
variability due to deviation
in device performance
Current becomes temperature dependent
Unsuitable biasing method
45
Biasing using a resistance in the source lead can reduce the
variability in I
D
Coupling of a signal source to the gate using a capacitor C
C1

Biasing in MOS with feedback resistor
46
Implementing a constant-current
source using a current mirror
Biasing in MOS with current-source
Biasing the MOSFET using a
constant-current source I
47
The ac characteristic
Definition of transconductance
Definition of output resistance
Definition of voltage gain
Small-signal model
Hybrid model
T model
Modeling the body effect
Small-signal operation and models
48
Conceptual circuit utilized to study
the operation of the MOSFET as a
small-signal amplifier.
Small signal condition
gs GS t
v 2(V V ) <<
The conceptual circuit
49
With the channel-length
modulation the effect by
including an output resistance
The small-signal models
Without the channel-length
modulation effect
OV n
V v
GS
D
m
V
L
W
k
v
i
g
GS GS
' =
c
c
=
DS A
o
D D
i I
D D
v V
r
i I
=
c
=
c
transconductance
50
An alternative representation
of the T model
The small-signal models
The T model of the MOSFET
augmented with the drain-to-
source resistance r
o

51
Small-signal equivalent-circuit model of a MOSFET in
which the source is not connected to the body.
Modeling the body effect
52
Characteristic parameters
Three configurations
Common-source configuration
Common-drain configuration
Common-gate configuration
Single-stage MOS amplifier
53
Input resistance with no load
Input resistance
Open-circuit voltage gain
Voltage gain
=
L
R
i
i
i
i
v
R
i
i
in
i
v
R
=
L
R
i
o
vo
v
v
A
i
o
v
v
v
A
Definitions
54
Short-circuit current gain
Current gain
Short-circuit transconductance gain
Open-circuit overall voltage gain
Overall voltage gain
Output resistance

0 =
L
R
i
o
is
i
i
A
i
o
i
i
i
A
0 =
L
R
i
o
m
v
i
G
Definitions
=
L
R
sig
vo
v
v
G
0
sig
v
v
v
G
0

0 =
sig
v
x
x
out
i
v
R
55
Voltage divided coefficient

Hence the appropriate configuration should be
chosen according to the signal source and load
properties, such as source resistance, load resistance,
etc
sig in
in
sig
i
R R
R
v
v
+
=
o L
L
vo v
R R
R
A A
+
=
o m vo
R G A =
o L
L
vo
sig in
in
v
R R
R
A
R R
R
G
+ +
=
vo
sig i
i
vo
A
R R
R
G
+
=
out L
L
vo v
R R
R
G G
+
=
Relationships
56
Basic structure of the circuit
used to realize single-stage
discrete-circuit MOS
amplifier configurations.

Basic structure of the circuit
57
The simplest common-source
amplifier biased with constant-
current source.
C
C1
And C
C2
are coupling
capacitors.
C
S
is the bypass capacitor.
The common-source amplifier
58
Equivalent circuit of the CS amplifier
59
Small-signal analysis performed directly on the amplifier circuit
with the MOSFET model implicitly utilized.
Equivalent circuit of the CS amplifier
60
Input resistance
Voltage gain
Output resistance

G in
R R =
) // // (
L D o m v
R R r g A =
) // // (
o L D m
sig G
G
v
r R R g
R R
R
G
+
=
D o out
R r R // =
Characteristics of CS amplifier
Summary of CS amplifier
Very high input resistance
Moderately high voltage gain
Relatively high output resistance
61
The CS amplifier with a source resistance
62
Small-signal equivalent circuit with r
o
neglected
Voltage gain


S m
L D m
v
R g
R R g
A
+
=
1
) // (
S m
L D m
sig G
G
v
R g
R R g
R R
R
G
+ +
=
1
) // (
R
S
takes the effect of
negative feedback
Gain is reduction by
(1+g
m
R
S
)
63
Biasing with constant
current source I
Input signal v
sig
is
applied to the source
Output is taken at the
drain
Gate is signal grounded
C
C1
and C
C2
are coupling
capacitors
The Common-Gate amplifier
64
The CG amplifier
A small-signal equivalent
circuit
T model is used in
preference to the model
R
o
is neglecting
65
The CG amplifier fed with a current-signal input
Voltage gain


) // (
L D m v
R R g A =
sig m
L D m
v
R g
R R g
G
+
=
1
) // (
66
Noninverting amplifier
Low input resistance
Relatively high output resistance
Current follower
Superior high-frequency performance
Summary of CG amplifier
67
Biasing with current source
Input signal is applied to gate, output signal is taken at the source
The common-drain or source-follower amplifier
68
The CD or source-follower amplifier
Small-signal equivalent-
circuit model
T model makes analysis
simpler
Drain is signal grounded
1
1
//
//
~
+
+
=
m
L o
L o
sig G
G
v
g
R r
R r
R R
R
G
69
Circuit for determining the output resistance
70
Very high input resistance
Voltage gain is less than but close to unity
Relatively low output resistance
Voltage buffer amplifier
Power amplifier
Summary of CD or source-follow amplifier
71
The CS amplifier is the best suited for obtaining the
bulk of gain required in an amplifier.
Including resistance R
S
in the source lead of CS
amplifier provides a number of improvements in its
performance.
The low input resistance of CG amplifier makes it useful
only in specific application. It has excellent high-
frequency response. It can be used as a current buffer.
Source follower finds application as a voltage buffer and
as the output stage in a multistage amplifier.
Summary and comparisons
72
Internal capacitances
The gate capacitive effect
Triode region
Saturation region
Cutoff region
Overlap capacitance
The junction capacitances
Source-body depletion-layer capacitance
drain-body depletion-layer capacitance
High-frequency model
The internal capacitance and high-frequency model
73
MOSFET operates at triode region

MOSFET operates at saturation region

MOSFET operates at cutoff region
ox gd gs
WLC C C
2
1
= =
=
=
0
3
2
gd
ox gs
C
WLC C
=
= =
ox gb
gd gs
WLC C
C C 0
The gate capacitive effect
74
Overlap capacitance results from the fact that the source and
drain diffusions extend slightly under the gate oxide.
The expression for overlap capacitance
Typical value

ox ov ov
C WL C =
L L
ov
1 . 0 05 . 0 =
Overlap capacitance
This additional
component should be
added to C
gs
and C
gd
in
all preceding formulas
75
Source-body depletion-layer capacitance

drain-body depletion-layer capacitance

o
SB
sb
sb
V
V
C
C
1
0
=
o
DB
db
db
V
V
C
C
1
0
=
The junction capacitances
76
77
The equivalent circuit model with
C
db
neglected (to simplify analysis)
The equivalent circuit for the
case in which the source is
connected to the substrate
(body)
78
Current gain

Unity-gain frequency
) (
gd gs
m
i
o
C C s
g
I
I
+
=
) ( 2
gd gs
m
T
C C
g
f
+
=
t
The MOSFET unity-gain frequency
79
The depletion-type MOSFET
Physical structure
The structure of depletion-type MOSFET is
similar to that of enhancement-type MOSFET with
one important difference: the depletion-type
MOSFET has a physically implanted channel

There is no need to
induce a channel
The depletion MOSFET
can be operated at both
enhancement mode and
depletion mode
80
Simplified circuit symbol applicable
for the case the substrate (B) is
connected to the source (S).
Circuit symbol for the n-channel depletion-MOS
Circuit symbol for the n-
channel depletion-type
MOSFET
81
Characteristic curves
Expression of characteristic equation

Drain current with

2
2
1
) '
t GS n D
V v
L
W
k i =
0 =
GS
v
2
2
1
'
t n DSS
V
L
W
k I =
the i
D
v
GS
characteristic
in saturation
82
Sketches of the i
D
v
GS
characteristics for MOSFETs of enhancement and
depletion types
The characteristic curves intersect the v
GS
axis at V
t
.
The i
D
v
GS
characteristic in saturation
83
The output characteristic curves
84
N
-
c
h
a
n
n
e
l

Depletion
layer
G
D
S
G
D
S
n-type
Semiconductor
The junction FET
P
+
P
+
85
U
GS
= 0
U
GS
< 0
U
GS
= U
GS(off)
D
S
P
+
Physical operation under v
DS
=0
G
P
+
D
S
P
+
G
P
+
D
S
G
P
+
P
+
86
The effect of U
DS
on I
D
for U
GS(off)
<U
GS
< 0

SJTU J. Chen 87 2013/9/13
Summary of semiconductor devices
88
Diode, BJT and FET are nonlinear devices
made of semiconductor, mostly silicon
Diode
A diode allows current to flow in forward direction
and hence can perform functions such as
rectification, demodulation/detection, switch etc.
The reverse current may become dramatically
large at breakdown, such phenomena can be used
as voltage regulator
89
Bipolar Junction Transistor
A BJT has three terminals: base, emitter and collector
The collector current is controlled by voltage/ current on
the base-emitter junction and is almost independent on
collector voltage.
It can perform functions such as amplification and switch,
etc.
A BJT should be properly biased for normal operation
There are three basic configurations, each has different
performance (input/output resistance, gain, high frequency
response, etc)
90
Field Effect Transistor
A FET has three terminals: gate, source and drain
The drain current is controlled by gate voltage and
is almost independent on drain voltage.
It can perform functions such as amplification,
logic calculation and switch, etc.
A FET should be properly biased for normal
operation
There are three basic configurations, each has
different performance (input/output resistance,
gain, high frequency response, etc)
91
As the microelectronics develops, more and
more functions are fulfilled by IC chips
The discrete devices and circuits, however, are
still very important not only for practical
applications, but also for better understanding
and design of LSICs
Quantitative calculation is sometimes
complicated but not difficult
As long as you know the parameter definitions
clearly, results can be derived KCL, KVL, etc

FET

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