Contents

Doping. Doping techniques.

Diffusion.
Doping profiles. Diffusion process steps
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Doping
The process of adding impurities to a semiconductor is known as Doping. Doping material is either(a)Pentavalent atoms(i.e Bismuth , antimony ,arsenic , phosphorus) which have 5 valence electrons. (b)Trivalent atoms(i.e gallium , indium , alluminium , boron) which have three valence electrons.

Doping Techniques
There are two doping techniques(1) Diffusion (2)Ion Implantation

The usual way to form junctions in the semiconductor wafer is by thermal diffusion or ion implantation.

Diffusion
Diffusion is the movement of one material through another. There are two necessary conditions for diffusion to occur: (1)One of the materials must be at higher concentration than the other. (2)There must be sufficient energy in the system for the higher concentration material to move into or through the other.

Diffusion doping profiles

Considering a p-type crystal in which ptype dopants (+) are incorporated during the crystal growing process and they are uniformly distributed throughout the wafer. (1)Opposite type doping Here the wafer is exposed to a concentration of N-type dopants at a higher temperature.
Thus

the N type dopants are diffused into the wafer surface and has converted the top layer from p type to n type.
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Contd...
Dopant Gas flow
--------+ + + -+- -+- + + + + + + + + -+ -+- -+ + + ++++++++++ -

d diffusion tube

This process goes deeper into the wafer and a level comes where same no. of N type and P type atoms are present. This level is the location of the JUNCTION.

Contd...

(2)Same type doping In this doping profile the same type of dopant i.e. a p- type dopant is put on P-type wafer.

When this situation happens,the added dopant atoms simply increase the concentration of the dopant atoms in the localized region. Hence no Junction is formed.
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Diffusion Process Steps

Wafers require two steps:

(a)Deposition. (b)Drive-in Oxidation

Deposition
The

first step of a diffusion process is called Deposition. It takes place in a tube furnace in which the wafer is placed. A source of of dopant atoms is located in the source cabinet and their vapours are transferred into the tube. Then the dopant atoms diffuse into the exposed wafer.
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Mechanism of movement of dopant atoms

The dopant atoms move by two different mechanisms:

(1)Vacancy movement (2)Interstitial movement

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Contd...

In vacancy model the dopant atoms move by filling empty crystal positions called Vacancies.

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Contd...

In interstitial movement the dopant atom moves trough the spaces between the crystal sites.i.e intersite.

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Deposition steps
A deposition process requires four steps. They are(1)Pre-clean and etch.

(2)Tube deposition.
(3) Deglaze. (4) Evaluation.
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Drive-in Oxidation
The second major part of the diffusion process is the drive-in-oxidation step also called as re-oxidation. The purpose of this step is two fold: (1) Redistribution of the dopant in the wafer. (2) Growth of a new oxide on the exposed silicon surface.

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Contd...
(1)The rst step is redistribution of the dopant deeper into the wafer.
In

the drive-in, there is no dopant source. heat alone drives the dopant atoms deeper and wider into the wafer.
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The

Contd...
(2)The second purpose of drive-in oxidation is the oxidation of the exposed silicon surfaces. The atmosphere in the tube is oxygen or water vapour, which performs the oxidation simultaneously as the dopants are being driven deeper into the wafer. Generally, the drive-in- oxidation step takes place at a higher temperature than the deposition step.
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Conclusion

Thus

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References

Peter van Zant , Microchip Fabrication,, Tata McGraw Hill , 2nd edition, 2012.

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Thank you

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