CHAPTER 1:

OVERVIEW OF POWER
ELECTRONIC DEVICES


SCR
Structure
Terminals
Operation
Symbol
SCR
pnpn
devices
(thyristor)
family
Terminals
Gate(G)
Anode(A)
Cathode(C).
Application
s
relay control
time-delay
circuit
regulated
power supplier
static
switches
motor control
chopper
inverter
battery
charges
phase control
the anode must be positive with respect to
the cathode and no gate signal junction j1
and j3 are forward biased and j2 is reversed
biased.

cathode positive with respect to the anode,
j2 is forward-biased and j1 and j3 are
reverse biased. Again only leakage current
flows.
Using 2 transistor (NPN and PNP).
From 0 ke t1 ,Vgate = 0V.
Vb2 =Vgate =0V
Base current, Ib2 =0 and Ic2 almost same to Ic0.
Base current for Q1 , Ib1=Ic2=Ic0.
The current too smal to on the Q1.
So that, both transistor will OFF .
The resistance for each transistor are high
between the collector and emitter.
So that, the circuit will open.

When t= t1, Vg is trigger to the gate terminal.
The value is enough to on Q2(Vbe2=Vg).
Current collector Q2 will increase and will on
Q1(Ib1=Ic2).
When Q1 on, Ic1 will increase and also increase the Ib2.
Ib2 at Q2 increase and it also increase the Ic2.
This process is called Regeneration Concept where the
current collector for each transistor will increase and this
will make the process continuous for each transistor.
The resistance between anode and cathode is low.
So that, the anode current (IA) is almost same with the
cathode current (IK).
In this condition, we can assume that the SCR will on.

Forward Breakover voltage
Minimum forward voltage, gate being open, SCR
starts conducting to turn ON (50 500V)
Holding current
Minimum anode current, to maintain SCR in the
ON state

Latching Current
Minimum anode current required
maintaining SCR in ON state immediately
after SCR has been turn on and gate current
has been removed

Reverse Breakover Voltage
Maximum reverse voltage can applied to
SCR without conducting in reverse direction

Forward current rating
Maximum anode current that SCR is capable
of passing without destruction
Gate triggering voltage
Minimum values of gate voltage at which
SCR is turned ON

Gate triggering current
Resulting gate current

Increase the forward biased voltage more or
equal to forward breakdown
Trigger positive supply when the device in
forward biased condition, Gate control
method are trigger with
(i)DC signal
(ii)AC signal
(iii)beat signal
Method to off SCR
1)natural Commutation
2)Reverse Bias Turn Off
3)Get turn Off.
#To turn off SCR, the anode-cathode
current must be reduced to less than
the holding current, Ih
Requirement to off SCR
1) Cut off the current connection of SCR.
2) Short anode and cathode.
3) Switch off the positive voltage supply at anode.
4) Change the polarity of anode to negative.
GTO
Structure
Terminals
Operation
Symbol
4 layers of semi-conductor material
Has 3 terminals, anode, cathode and Gate.
Behave like normal thyristor, but can be
turned off using gate signal.
However turning off is difficult. Need very
large reverse gate current (normally 1/5 of
anode current).


- Can turn on by giving positive supply to the gate.
- GTO still function without positive supply.
- GTO can turn off by supply negative supply at
the gate and this will cause negative Ig flow
drastically.
- Negative Ig only flow in just a few microsecond.
-When Ig reach the maximum level, current at
anode will fall down and VAK voltage will
increase
i. Traction
ii. inverters
iii. motor drives
iv. pulsed power
v. distribution lines
vi. induction heating
vii. flexible ac transmission
systems


TRIAC
Structure
Terminals
Operation
Symbol
Has three terminal semiconductor for controlling
current in either direction.
The symbol looks like two SCRs in parallel(
opposite direction) with one trigger or gate
terminal.

n
n
n
p

n
p
n
MT2
MT1
G
The main or power terminals are designated
as MT1 and MT2 .

Bidirectional electronic switch which can
conduct current in either direction when it is
triggered (turned on). Doesn't have any
polarity.

When the voltage on the MT2 is positive
with regard to MT1 and a positive gate voltage
is applied, the left SCR conducts.

When the voltage is reversed and a negative
voltage is applied to the gate, the right SCR
conducts.

Minimum holding current, Ih, must be
maintained in order to keep a triac conducting.

Operates in the same way as the SCR however it
operates in both a forward and reverse
direction.
It can be triggered into conduction by either (+)
or (-) gate signal.
TRIAC is capable of conducting current in both
directions and assuring that it switches "off"
during the brief zero-crossing of current can be
difficult.

Application
1) Phase control
2) Inverter design
3) AC switching
4) Relay replacement
Two main categories of transistors:
bipolar junction transistors (BJTs) and
field effect transistors (FETs).
Transistors have 3 terminals where the
application of current (BJT) or voltage (FET) to
the input terminal increases the amount of
charge in the active region.
The physics of "transistor action" is quite
different for the BJT and FET.


In analog circuits, transistors are used in
amplifiers and linear regulated power
supplies.
In digital circuits they function as
electrical switches, including logic gates,
random access memory (RAM), and
microprocessors

BJT
Structure
Terminals
Operation
Symbol

A bipolar transistor
essentially consists of
a pair of PN Junction
diodes that are joined
back-to-back.

There are therefore
two kinds of BJT, the
NPN and PNP
varieties.

The three layers of the sandwich are
conventionally called the Collector, Base,
and Emitter.

The term bipolar was tagged onto the
name to distinguish the fact that both
carrier types play important roles in the
operation
-Energy levels in an NPN
transistor under no externally
applying voltages.
-In each of the N-type layers
conduction can take place by
the free movement of electrons
in the conduction band.
In the P-type (filling) layer
conduction can take place by
the movement of the free holes
in the valence band.
-However, in the absence of any
externally applied electric field,
we find that depletion zones
form at both PN-Junctions, so
no charge wants to move from
one layer to another.
What happens when we
apply a moderate voltage
between the collector
and base parts.
The polarity of the
applied voltage is chosen
to increase the force
pulling the N-type
electrons and P-type
holes apart.
This widens the depletion
zone between the
collector and base and so
no current will flow.
In effect we have
reverse-biassed the Base-
Collector diode junction.
Apply a relatively small
Emitter-Base voltage whose
polarity is designed to
forward-bias the Emitter-Base
junction.
This 'pushes' electrons from the
Emitter into the Base region
and sets up a current flow
across the Emitter-Base
boundary.
As a result the electrons which
get into the Base move swiftly
towards the Collector and
cross into the Collector region.
Hence a Emitter-Collector
current magnitude is set by the
chosen Emitter-Base voltage
Some electron fall into a hole
-Some of free electrons
crossing the Base encounter a
hole and 'drop into it'.
-As a result, the Base region
loses one of its positive
charges (holes).
-The Base potential would
become more negative
(because of the removal of the
holes) until it was negative
enough to repel any more
electrons from crossing the
Emitter-Base junction.
The current flow would then
stop.
Normal operation
B-E junction forward biased; B-C junction reverse
biased.

fet

FET
Structure
Terminals
Operation
Symbol
FET Field Effect Transistor
-are unipolar transistors since their operation
depends primarily on a single carrier type.

There are two main types of FETs:
a) Junction Field-Effect Transistor (JFET)
b) Metal Oxide Semiconductor Field Effect Transistor
(MOSFET)

The JFET and MOSFET are voltage controlled devices:
that is a small change in input voltage causes a large
change in output current.


FET operation involves an electric field which
controls the flow of a charge (current ) through
the device.
Bipolar transistor employs a small input current
to control a large output current.
The source, drain, and gate terminal of the FET
are analogous to the emitter, collector, and base
of a bipolar transistor .
N-channel and P-channel refer to the material
which the drain and source are connected.
The JFET channel is controlled
by the size of the depletion
region of the reverse-biased PN
junction.
Identify the characteristics of FET
Identify the characteristics of FET



MOSFET have two types:
a) Depletion type MOSFET ( DE MOSFET)
b) Enhancement type MOSFET (EN MOSFET)

The channel is controlled by the action of the electric
field.

DE MOSFET is similar to JFET.
DE MOSFET- Depletion & Enhancement mode MOSFET
(MOSFET Ragam Susutan & Peningkatan )

Gate voltage can be varied through both negative and positive values.
Voltage is positive value DE MOSFET will operate in depletion mode.
Voltage is negative value DE MOSFET will operate in enhancement
mode.
The channel has connection from drain and source. The current drain can
flow even the voltage gate ,V
GS
=0.



-Has no PN junction at
the gate
- SiO
2
is used to separate the
Gate terminal with the channel.
- Cause the gate current is
smaller than JFET.
EN MOSFET- Enhancement mode MOSFET (MOSFET
Ragam Peningkatan )

Operate if the voltage gate,V
GS
is large.

The channel has no connection from drain and source. The current drain
cant flow if the voltage gate ,V
GS
=0.



Until one level, the depletion area will cover
all the channel and the current ID cannot
flow.

# VGS , depletion area , and the ID

current will

Types FET

BJT
Input Resistance -Big
10
9
-10
11

-Small
10
3
- 10
5

Current flow - unipolar - bipolar
Operate device - Voltage-operated
device
- Current-operated
device
Power gain - Higher than BJT - Lower than FET
Power requirement - FET digital circuit
need much less
power
- BJT circuit need
more power
Insulated Gate Bipolar Transistor
have three terminals. The terminals are
collector(C), gate (G) and emitter (E).

combines features from both the MSOFET
and BJT.
useful in high voltage and high current
switching applications
APPLICATION
electric cars
Trains
variable speed refrigerators
air-conditioners
stereo systems with switching amplifiers
switched-mode power supplies
traction motor control
induction heating