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IMPATT diode
V and I characteristics
Construction
TRAPATT DIODE
TRApped-Plasma Avalanche Trigged Transit Diode .
Gunn Diode
Such type of semiconductor device which have only N type
doped (semiconductor) material, is called Gunn Diode.
Symbols and Circuit Diagram:
Gunn Effect:
Above some critical voltage (Corresponding to Electric
field of 2k-4k V/cm) the current passing through n-type
GaAs becomes a periodic fluctuating function of time.
Frequency of oscillation is determined mainly by the
specimen, not by the external circuit.
Period of oscillation is inversely proportional to the
specimen length and is equal to the transit time of
electrons between the electrodes
Applications
Anti-lock brakes
Sensors for monitoring the flow of traffic
Pedestrian safety systems
Distance traveled" recorders
Traffic signal controllers
Automatic traffic gates