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Detectors
By:
Mr. Gaurav Verma
Asst. Prof.
ECE dept.
NIEC
Detector Technologies
Layer Structure
Features
MSM
Semiinsulating GaAs
Simple, Planar,
Low Capacitance
Low Quantum Efficiency
PIN
Contact
Absorption
Contact
Trade-off Between
Quantum efficiency
and Speed
InGaAsP p 5x1018
InGaAs n- 5x1014
InP
n 1x1019
Contact
Multiplication
Transition
Absorption
Contact
Substrate
APD
Waveguide
InP
InP
InGaAsP
InGaAs
InP
InP
Gain-Bandwidth:
p 1x1018
16
120GHz
n 5x10
Low Noise
n 1x1016
Difficult to make
n 5x1014
18
Complex
n 1x10
Semi insulating
Absorption Layer
Guide Layers
Key:
Absorption Layer
Contact layers
High efficiency
High speed
Difficult to couple into
Band Diagram
showing carrier
movement in E-field
Light intensity as a
function of distance below
the surface
Characteristics of Photodetectors
External
Quantum efficiency
i /q
Number of Collected electrons
ph
1 Rp 1 e W
Number of Photons *Incident* on detector Po / h
Responsivity
i
Photo Current (Amps)
q
ph
1 Rp 1 eW
Incident Optical Power (Watts) Po h
Internal
Quantum Efficiency
Fraction Transmitted
into Detector
Photocurrent
i ph
Po
W
1 Rp 1 e
h
RPo
Fraction absorbed in
detection region
Responsivity
Output current per unit incident light
power; typically 0.5 A/W
e
R
M
h
Photodiode Responsivity
PIN photodiodes
Energy-band diagram
p-n junction
Electrical Circuit
Diffused Type
(Makiuchi et al. 1990)
Diffused Type
(Dupis et al 1986)
Diffused structures tend to have lower dark current than mesa etched structures although they are
more difficult to integrate with electronic devices because an additional high temperature processing
step is required.
APD Detectors
q
P
h
Signal Current i s M
APDs Continued
Id
Cd
PIN
Rd
Iph
Id
Cd
In
APD
MSM Detectors
Light
Schottky barrier
gate metal
Simple to fabricate
Quantum efficiency: Medium
Problem: Shadowing of absorption
region by contacts
Capacitance: Low
Bandwidth: High
Can be increased by thinning absorption layer and
backing with a non absorbing material. Electrodes
must be moved closer to reduce transit time.
Compatible with standard electronic processes
GaAs FETS and HEMTs
InGaAs/InAlAs/InP HEMTs
To increase speed
decrease electrode spacing
and absorption depth
Absorption
layer
E Field
penetrates for
~ electrode spacing
into material
Waveguide Photodetectors
Detector Capacitance
xp
xn
A
W
p-n junction
w xp xn
C
Nd
2 Vo Vbi
2(Vo Vbi )
W
qNd
1/ 2
Where:
=permitivityq=electroncharge
Nd=Activedopantdensity
Vo=AppliedvoltageVbi=Builtinpotential
A=Junctionarea
Bandwidth limit
C=0K A/w
where K is dielectric constant, A is area, w
is depletion width, and 0 is the
permittivity of free space (8.85 pF/m)
B = 1/2RC
Diffusion
=4 ns/m (slow)
Dark Current
Surface Leakage
Bulk Leakage
Surface Leakage
Bulk Leakage
Ohmic Conduction
Diffusion
Generation-recombination
via surface states
Generation-Recombination
Tunneling
Usually not a significant noise source at high bandwidths for PIN Structures
High dark current can indicate poor potential reliability
In APDs its multiplication can be significant
2
N 2q I p I D M F M B 2qI L B 4k BTB / RL
ip= average signal photocurrent level
based on modulation index m where
2
p
2 2
p
m I
2
Optimum value of M
x2
opt
2qI L 4k BT / RL
xq I p I D
h
NEP
e
4kT
2eI D M 2
M RL
x
Comparisons
PIN gives higher bandwidth and bit rate
APD gives higher sensitivity
Si works only up to 1100 nm; InGaAs up
to 1700, Ge up to 1800
InGaAs has higher for PIN, but Ge
has higher M for APD
InGaAs has lower dark current