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sjf1e12@soton.ac.uk
Nanocrystalline graphite
deposition
6-inch silicon wafer substrate
Oxford instruments NANOFAB
PECVD
Scalable and reproducible
standard microfabrication
process
Temperature (C)
750
Methane flow
(sccm)
75
Hydrogen flow
(sccm)
60
Pressure (mTorr)
RF Power (W)
1500
100
Material characterisation
100
nm
Resistivity
by electrical
measureme
nts
Film stress
Stress gradient
in the film
20 um
Applied
stress
causes
curvature in
cantilevers
20 um
Device fabrication
Nanographite
KEY:
Anchor
PECVD Silicon
dioxide
SC Silicon substrate
Undercu
t
Simulation
Modelled as classic beams under tension where Natural
frequency f varies with : Length L , Stiffness E, density
,Stress S and Geometry factor I,:
2 EI
SL2
f 2
1
L
EI 2
Nominal
length
Effective
length
2 r
2 r
DC
DC 0
Laser source
Measured 1st
vibration mode
Split beam
Doppler shift used
to calculate
vibration
amplitude
Resonance results
9 MPa tensile
stress
Ambient
Q = 20
30 mTorr
Q=
1300
Conclusions
Any