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R.RADHA KRISHNA
B.E.,M.Tech,M.B.A,(Ph.D),AMIETE.
N - TYPE SEMICONDUCTOR:
P - TYPE SEMICONDUCTOR:
DRIFT CURRENT
When an electric field is applied across
the semiconductor material, the charge
carriers attain a certain drift velocity V d.
Which is equal to the product of the
mobility of the charge carriers and the
applied electric field intensity E.
(or)
Drift current arises due to potential
gradient (due to applied voltage)
DIFFUSION CURRENT
Diffusion current arises due to concentration
gradient.
Total Current :
The total current in a semiconductor is the sum of drift current
and diffusion current. Therefore, for a P-type semiconductor, the
total current per unit area, i.e. the total current density is given by
CONTINUITY EQUATION:
The continuity equation gives the dependence of
the current components on time as well as space.
This equation is very useful in formulation the
current equation of any device, in particular the
p-n junction diode.
Assume a differential volume of n type material of
thickness x and cross section of 'A'.
Let the current due to electron entering the
volume is In and current leaving is In + dIn after
flowing across the volume for a length of x.
Let n be the concentration of the electron in the
material.
LAW OF JUNCTIONS
FERMI-DIRAC FUNCTIONS
The Fermi-Dirac probability function f(E)
specifies the fraction of all states at energy E (in
eV) occupied under conditions of thermal
equilibrium. From quantum physics,
Fermi Level
An expression for EF may be obtained on the basis of the
completely degenerate function. The total number of
free electrons is given by
HALL EFFECT
If a metal or semiconductor carrying a
current I is placed in a perpendicular
magnetic field B, an electric field E is
induced in the direction perpendicular to
both I & B. This phenomenon is known as
the Hall effect.
It is used to determine whether a SC is p type or n - type. By measuring conductivity
, the mobility , carrier concentration can be
calculated using Hall effect.
UNIT-III
P-N JUNCTION DIODE
Enhancement MOSFET
= RB1/(RB1+RB2)
The typical value of ranges from 0.56 to 0.75
SELF BIAS
Tunnel Diode
Applications
1.Tunnel diode used as ultra-high speed
switch with
Switching speed of the order in ns or ps.
Photodiode