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Bipolar Junction Transistors

Bipolar Junction Transistors

1. Understand bipolar junction transistor operation


in amplifier circuits.
2. Analyze simple amplifiers using the load-line
technique and understand the causes of
nonlinear distortion.
Tubes
Triode Tube
Bardeen, Brittain and Shockley

Discovery of the transistor in 1947


Initial Demonstration of Solid State
Amplification
First Integrated Circuit

Jack Kilby at Texas Instruments (1958)


Early Integrated Circuit
Chip Evolution
NPN and PNP Bipolar Junction
Transistors
NPN Bipolar Junction Transistor
Bias Conditions for PN Junctions
The base emitter p-n
junction of an npn
transistor is normally
forward biased

The base collector p-n


junction of an npn
transistor is normally
reverse biased
Bias Conditions for NPN Junctions
Bias Conditions for NPN Junctions
Bias Conditions for NPN Junctions
Bias Conditions for NPN Junctions
Equations of Operation

v BE
iE I ES exp 1
VT

From Kirchoffs current law:

iE iC iB
Equations of Operation
Define as the ratio of collector current to emitter
current:
iC

iE
Values for range from 0.9 to 0.999 with 0.99 being
typical. Since:

i E iC i B 0.99i E i B i B 0.01i E
Most of the emitter current comes from the collector
and very little (1%) from the base.
Equations of Operation

v BE
iE I ES exp 1
VT
iC

iE

v BE
iC I ES exp 1
VT
Equations of Operation

i E iC i B
iC
i B i E iC i E 1 i E (1 )
iE

v BE
i B (1 ) I ES exp 1
VT
Equations of Operation
Define as the ratio of collector current to base
current:
iC

iB 1

Values for range from about 10 to 1,000 with a


common value being 100.

iC i B
The collector current is an amplified version of the
base current.
Equations of Operation
v BE
iE I ES exp 1
VT

v BE iC
iC I ES exp 1 0.99
VT iE

v BE
i B (1 ) I ES exp 1
VT

iC
iC i B 100
iB 1
The base region is very thin

Only a small fraction of the emitter current flows into the base
provided that the collector-base junction is reverse biased and the
base-emitter junction is forward biased.
Exercise 13.1
A certain transistor has = 50, IES = 10-14A, vCE = 5 V, and iE = 10
mA. Assume VT = 0.026 V. Find vBE, vBC, iB, iC and .
v BE v BE
i E I ES exp 1 For operation with iE I ES iE I ES exp
VT VT
iE 10 2
v BE VT ln 26 mV ln 718.4 mV
10
14
I ES
v BC v BE vCE 0.718V 5V 4.282V
50
0.980
1 51
iC i E 9.80mA
i 9.80mA
iB C 196 A
50
Exercise 13.2
Compute the corresponding values of if = 0.9, 0.99 and 0.999



1
0.9
9
1 0.9 0.9

0.99
99
1 0.99 0.99

0.999
999
1 0.999 0.999
Exercise 13.3
A certain transistor operated with forward bias of the base-emitter
junction and reverse bias of the base-collector junction has iC = 9.5
mA and iE = 10 mA. Find the value of iB, and .

i B i E iC 0.5 mA
iC 9.5mA
0.95
i E 10mA
iC
19
iB
Common-Emitter Characteristics

vBC

vCE

v BC v BE vCE
if vCE v BE v BC 0 reverse bias
Common-Emitter Input
Characteristics

v
i B (1 ) I ES exp BE 1
VT
Common-Emitter Output
Characteristics

iC i B for 100
Amplification by the BJT

A small change in vBE results in a large change in iB if the


base emitter is forward biased. Provided vCE is more than a
few tenths of a volt, this change in iB results in a larger
change in iC since iC=iB.
Common-Emitter Amplifier
Load-Line Analysis of a Common
Emitter Amplifier (Input Circuit)

VBB vin t RB iB t v BE t
Load-Line Analysis of a Common
Emitter Amplifier (Output Circuit)

VCC RC iC vCE
Inverting Amplifier

As vin(t) goes positive, the load line moves upward and to the
right, and the value of iB increases. This causes the operating
point on the output to move upwards, decreasing vCE An
increase in vin(t) results in a much larger decrease in vCE so that
Load-Line Analysis of BJT
Assume VCC = 10V iBQ = 25 A
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
VBB vin t RB i B t v BE t
1.6 vin 40kiB v BE
i B 0 and vin 0 v BE 1.6
1.6V
v BE 0 and vin 0 iB 40 A
40k
Load-Line Analysis of BJT
Assume VCC = 10V iBmax= 35 A
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
VBB vin t RB i B t v BE t
1.6 vin 40ki B v BE
i B 0 and vin 0.4 v BE 2
2V
v BE 0 and vin 0.4 i B 50 A
40k
Load-Line Analysis of BJT
Assume VCC = 10V iBmin= 15 A
VBB = 1.6V
RB = 40 k
RC = 2 k
Vin = 0.4sin(t)
VBB vin t RB i B t v BE t
1.6 vin 40kiB v BE
i B 0 and vin 0.4 v BE 1.2
1.2V
v BE 0 and vin 0.4 i B 30 A
40k
Load-Line Analysis of BJT
iBQ = 25 A
iBmin= 15 A
iBmax= 35 A

VCEQ = 5V VCEQ = 5V
iCEQ = 2.5 mA VCEmin = 3V
VCEmax = 7V

10 2k iC vCE
Load-Line Analysis of BJT

Voltage waveforms for the common emitter amplifier.


The gain is -5 (inverting).
Clipping
When iC becomes
zero, we say that the
transistor is
cutoff.

When vCE 0.2 V, we



say that the transistor
is in saturation.
Amplification occurs in the active region. Clipping
occurs in the saturation or cutoff regions.
Clipping
Exercise 13.5
vin (t ) 0.8 sin(t )
Find VCE max , VCEQ i BQ 25A
and VCE min

VBB vin t RB i B t v BE t
1.6 vin 40ki B v BE
i B 0 and vin 0 v BE 1.6
1.6V
v BE 0 and vin 0 i B 40 A
40k
Exercise 13.5

vin (t ) 0.8 sin(t )


Find VCE max , VCEQ i Bmax 45A
and VCE min

VBB vin t RB i B t v BE t
1.6 vin 40ki B v BE
i B 0 and vin 0.8 v BE 2.4
2.4V
v BE 0 and vin 0.8 i B 60 A
40k
Exercise 13.5
vin (t ) 0.8 sin(t )
Find VCE max , VCEQ i Bmin 5A
and VCE min

VBB vin t RB i B t v BE t
1.6 vin 40ki B v BE
i B 0 and vin 0.8 v BE 0.8
0.8V
v BE 0 and vin 0.8 i B 20 A
40k
Exercise 13.5
i BQ 25A VCEQ 5V iCQ 2.5mA
i Bmin 5A VCEmax 9V iCmin 0.5mA
i Bmax 45A VCEmin 1V iCmax 4.5mA
Exercise 13.6
vin (t ) 0.8 sin(t ) i BQ 15A
VBB 1.2V

VBB vin t RB i B t v BE t
1.2 vin 40ki B v BE
i B 0 and vin 0 v BE 1.2
1.2V
v BE 0 and vin 0 i B 30 A
40k
Exercise 13.6
vin (t ) 0.8 sin(t ) i Bmax 35A
VBB 1.2V

VBB vin t RB i B t v BE t
1.2 vin 40ki B v BE
i B 0 and vin 0.8 v BE 2
2V
v BE 0 and vin 0.8 i B 50 A
40k
Exercise 13.6
vin (t ) 0.8 sin(t ) i Bmin 1A
VBB 1.2V

VBB vin t RB i B t v BE t
1.2 vin 40ki B v BE
i B 0 and vin 0.8 v BE 0.4
0.4V
v BE 0 and vin 0.8 i B 10 A
40k
Exercise 13.6

i BQ 15A VCEQ 7V iCQ 1.5mA


i Bmin 1A VCEmax 9.8V iCmin 1.0mA
i Bmax 35A VCEmin 3V iCmax 3.5mA
PNP Bipolar Junction Transistor

Except for reversal of current directions and


voltage polarities, the pnp BJT is almost
identical to the npn BJT.
PNP Bipolar Junction Transistor
iC i E
i B (1 )i E
iC i B
i E iC i B
Common-Emitter Characteristics for a
PNP BJT

v BE
i E I ES exp 1

VT
v BE
i B (1 ) I ES exp 1

VT
Exercise 13.7

Find :
For VCE 6V, i C 2.5mA i B 50A
iC 2.5mA
50
iB 50A
Exercise 13.8

Common emitter amplifier

0.8 vin 8000i B v BE 0


Exercise 13.8
0.8 vin 8000i B v BE 0

vin 0 iB 0 v BE 0.8
0.8
vin 0 v BE 0 i B 100 A
8000
vin 0.2 i B 0 v BE 0.6
0.6
vin 0.2 v BE 0 i B 75A
8000
vin 0.2 i B 0 v BE 1
1
vin 0.2 v BE 0 iB 125A
8000
Exercise 13.8

i BQ 24 A
i Bmax 48A
i Bmin 5A
Exercise 13.8

Common emitter amplifier


9 3000iC vCE 0
vCE 9 3000iC
Exercise 13.8
Load line:

vCE 9 3000iC

iC 0 vCE 9
9
vCE 0 iC 3mA
3000
Exercise 13.8

i Bmax 48A VCEmax 1.8V


i Bin 5A VCEmin 8.3V
i BQ 24 A VCEQ 5.3V

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