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For PMOS
VSG > |VTP|
VSD sat = VSG + VTP
Electronics
ID versus VDS (NMOS) or ID versus VSD
(PMOS)
Electronics
NMOS PMOS
o VTN is POSITIVE o VTP is NEGATIVE
o VGS > VTN to o VSG > |VTP| to turn
turn on on
o Triode/non- o Triode/non-
saturation region saturation region
Electronics
DC analysis of FET
Electronics
MOSFET DC Circuit Analysis
- NMOS
The source terminal is
at ground and common
to both input and output
portions of the circuit.
The CC acts as an open
circuit to dc but it allows
the signal voltage to the
gate of the MOSFET.
In the DC equivalent circuit, the gate current into the transistor is
zero, the voltage at the gate is given by a voltage divider principle:
VG = VTH = R2 VDD
R1 + R2
Use KVL at GS loop:
VGS VTH + 0 = 0
Electronics VGS = VTH
MOSFET DC Circuit Analysis
- NMOS
1. Calculate the value of V GS
VDSsat = VGS VTN = 2 1 = 1V, so, VDS > VDSsat, our assumption
that the transistor is in saturation region is correct
Electronics
EXAMPLE
VDD =
10V
The transistor has
parameters VTN = 2V and
R1 = RD =
Kn = 0.25mA/V2. 10k
280k
Find ID and VDS
R2 =
160k
Electronics
Solution
1. VTH = 160 10 =
3.636 V 160 + 280
KVL at GS loop: VGS VTH + 0 = 0 VGS =
V
2. TH
Assume in saturation mode:
ID = Kn(VGS - VTN)2
So, ID = 0.669 mA
VG = VTH = R2 VDD
R1 + R2
Electronics
MOSFET DC Circuit Analysis
- PMOS
Assume the transistor is biased in the saturation
region, the drain current:
ID = Kp (VSG + VTP)2
Calculate VSD:
Use KVL at DS loop:
VSD + IDRD - VDD = 0
VSD = VDD - IDRD
If VSD > VSD(sat) = VSG + VTP, then the transistor is biased in the
saturation region.
If VSD < VSD(sat), then the transistor is biased in the non-saturation
region.
Electronics
Calculate the drain current and source to drain voltage of a common
source circuit with an p-channel enhancement mode MOSFET.
Also find the power dissipation.
Assume that, VTP = -1.1V and Kp = 0.3 mA/V2
5V
Use KVL at SG loop:
VSG + 0 +2.5 5 = 0
VSG = 5 2.5 = 2.5 V
50 k
VSG > |VTP |
Calculate VSD
ID = 0.365
Electronics mA
56.25 I 2
50.67 I + 11 = 0
ID = 0.536 mA ID = 0.365
mA
Electronics
LOAD LINE
Common source configuration i.e
source is grounded.
It is the linear equation of ID versus VDS
Use KVL
VDS = VDD IDRD
ID = -VDS + VDD
RD RD
Electronics
ID (mA)
y-
intercept
Q-
ID POINTS VGS
VDS (V)
VDS x-
intercept
Electronics
DC Analysis where source is NOT GROUNDED
For the NMOS transistor in the circuit below, the parameters are V TN =
1V and Kn=0.5mA/V2.
Electronics
1. Get an expression for VGS in terms of ID
use KVL:
0 + VGS+ 1(ID) -5 +1
=0
VGS = 4 - ID
2. Assume in saturation
Electronics