HCMUT FEEE Electronic engineering department

Instructor: H Trung M

Chapter 7

Bipolar Junction Transistors

Refs:
1. Solid State Electronic Devices, Ben G. Streetman and
Sanjay Banerjee, Sixth Edition

1
 Introduction
In recent decades, the higher layout density and
low-power advantage of CMOS technology has
eroded the BJTs dominance in integrated-circuit
products.
(higher circuit density better system
performance)

BJTs are still preferred in some integrated circuit

applications because of their high speed and
superior intrinsic gain.
faster circuit speed
larger power dissipation
limits device density (~104 transistors/chip)
2
 Introduction
Walter Brattain, John Bardeen, and William Shockley
invented the bipolar junction transistor (BJT) in 1949,
while working for Bell Telephone Laboratories.
This revolutionary invention changed the world.
The invention of the BJT followed the invention of the
point-contact transistor by Walter Brattain and John
Bardeen.
The point-contact transistor has several problems that
prevented it from becoming a viable device.
BJT is a three-terminal device.
BJT is used as amplifier and switch.

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Introduction

4
Types of transistors
Emitter Base
Discrete (double-diffused)
p+np transistor
5 m
200 m Collector

Integrated-circuit
n+pn transistor

6 m
200 m

5
BJT Structure - Planar

The Planar Structure developed by

Fairchild in the late 50s shaped the basic
structure of the BJT, even up to the present
day.

In the planar process, all steps are performed

from the surface of the wafer

6
 A schematic of the structure and doping profiles of a BJT along with a
simplified view of the cross-section

epitaxy: process by which

thin layer of single-crystal
material is deposited on
single-crystal substrate;
epitaxial growth occurs in
such way that the
crystallographic structure of
the substrate is reproduced
in the growing material; also
crystalline defects of the
substrate are reproduced in
the growing material.

Semiconductor Devices for Integrated

Slide 8-7 7
Circuits (C. Hu)
 Two types of BJT: NPN v PNP
Notations:
E = Emitter, B = Base, and C = Collector
JE : Emitter-base PN junction
JC : Collector base PN junction

VEB = VE VB VBE = VB VE
VCB = VC VB VBC = VB VC
VEC = VE VC VCE = VC VE
= VEB - VCB = VCB - VEB

IE = I B + I C
VBE + VEC + VCB = 0 8
7.1 Fundamentals of BJT Operation

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PNP Transistor in Active Mode

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7.2 Amplification with BJTs

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Amplification with BJTs

12
Amplification with BJTs

13
Amplification with BJTs

14
Amplification with BJTs

15
Amplification with BJTs

16
Amplification with BJTs

17
Amplification with BJTs

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Controlling of iC by variation of iB

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 Outline
1. Fundamentals of BJT Operation
2. Amplification with BJTs
3. BJT Fabrication
4. Minority Carrier Distributions and Terminal Currents
5. Generalized Biasing
6. Switching
7. Other Important Effects
8. Frequency Limitations of Transistors
9. Heterojunction Bipolar Transistors

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7.4 Minority Carrier Distributions and Terminal
Currents

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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BJT Operation

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Current Gain

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BJT: I-V Characteristics

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BJT: I-V Characteristics

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BJT: Parameters

1

D n W
1 E E0 B
DB pB 0 LE

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7.5 Generalized Biasing

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Ebers-Moll equivalent circuit
for all operating conditions

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Modes of Operation
Common-Emitter Output Characteristics

Mode E-B Junction C-B Junction

Saturation forward bias forward bias
Active/Forward forward bias reverse bias
Inverted reverse bias forward bias
Cutoff reverse bias reverse bias

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Cac ch hoat ng cua BJT NPN
Phn cc cho
Ch hoat ng Cach nh n bit vi BJT NPN
JE JC
VBE = VON v VCE > VCEsat
Tich cc [thun]
Thun Ngc I C = I B
(khuch ai)

VBE, VBC 0 (thc t VBE, VBC < VON)

Ngc Ngc Tt (OFF) IC = IB = IE = 0

VBE = VBEsat v VCE = VCEsat

Thun Thun Bao hoa (ON) I C < I B

Tng t vi ch tich cc thun

nhng hoan i chc nng E v C:
Ngc Thun Tich cc ngc
IE = RIB (R << ) v IC = IB + IE

Chu y: Vi BJT NPN Si th VON = 0.7V, VBEsat = 0.8V, v VCEsat = 0.2V. 42

BT tai lp

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 Large-signal models
Mode
Forward active Saturation Cut-off
BJT IB > IC >0 IE = IB = IC = 0

IB > 0 v VCE > VCE(sat) Si: VBE(on)= 0.7V v VCE(sat)=0.2V

IB > 0 v VEC > VEC(sat) Si: VEB(on)= 0.7V v VEC(sat)=0.2V

Note:
With forward active mode, we can use constant VON model for JE in calculations
With saturation mode, we use same model but VBE = VBEsat = 0.8V (Si NPN) 44
BJT: Modes of Operation

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BJT: Output Characteristics

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Temperature Effect With characteristic curves (NPN-CE)

a) Input characteristics b) Output characteristics

c) Transfer characteristics
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Amplification and Switching

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 Circuit Configurations

Common-Emitter
IV Characteristics Most popular
configuration
Active Mode
IC
Saturation Mode dc : 100
IC < IB IB
In active mode,
dc is the common emitter
dc current gain
49
BJT in forward active mode

Note:
IS = reverse saturation current
VT = thermal voltage = kT/q (=0.026V at 300K)
= CE current gain
= CB current gain 50
7.6 Switching Characteristics

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Switching Characteristics

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Schottky-Clamped Transistor

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 Outline
1. Fundamentals of BJT Operation
2. Amplification with BJTs
3. BJT Fabrication
4. Minority Carrier Distributions and Terminal Currents
5. Generalized Biasing
6. Switching
7. Other Important Effects
8. Frequency Limitations of Transistors
9. Heterojunction Bipolar Transistors

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 7.7 Other Important Effects
Non-Ideal Effects: Base Narrowing: (Early Effect)

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Injection level effects

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Thermal effects

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Structural effects: Emitter Crowding

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Emitter Bandgap Narrowing

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Breakdown

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Breakdown

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Avalanche Breakdown

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Avalanche breakdown related characteristics of a bipolar transistor in the commonbase
and common-emitter configurations. 63
Transistor (NPN) Voltage Ratings

Rating Description 2N3904

VCBO VCB with emitter circuit open 60 Vdc

VCEO VCE with base circuit open 40 Vdc

VEBO VEB with collector circuit open 6 Vdc

o = with the 3rd terminal open circuit

s = with the 3rd terminal short circuit (usually B and E)
x = with some specified circuit conditions

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 Outline
1. Fundamentals of BJT Operation
2. Amplification with BJTs
3. BJT Fabrication
4. Minority Carrier Distributions and Terminal Currents
5. Generalized Biasing
6. Switching
7. Other Important Effects
8. Frequency Limitations of Transistors
9. Heterojunction Bipolar Transistors

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7.8 Frequency Limitations of Transistors
Frequency Response: Amplification

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Frequency Response: Amplification

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Cut-off frequency: Amplification

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Drift in the Base

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 Small-Signal Model

(a) Small-signal model of pnp transistor, (b) more intuitive view of (a).

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High frequency equivalent circuit of a common
emitter circuit

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 High-Frequency model

(a) Structure of bipolar transistor showing junction capacitances,

(b) small-signal model with junction capacitances,
(c) complete model accounting for base charge. 72
7.9 Heterojunction Bipolar Transistors

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Heterojunction Bipolar Transistors

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Bipolar Junction Transistors: Summary

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