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Digital IC Design

Faculty-in-charge: Dr. Sitangshu Bhattacharya


Department of ECE
Indian Institute of Information Technology-Allahabad
Room No. 2221, CC-I
Telephone: 2131
Email: sitangshu@iiita.ac.in
Digital IC Design

Contents:

o MOS Transistor: Structure, External Bias, o Dynamic Logic Circuits Pass transistors, Voltage
Operation, Current-Voltage Characteristics, Bootstrapping, Synchronous Dynamic Circuit
Capacitances, Small Geometry Scaling Testing, Dynamic CMOS Circuit Techniques, High
performance Dynamic CMOS circuits
o MOS Inverters: Resistive Load Inverter, n-type
MOSFET load inverter, CMOS inverter o Semiconductor Memories DRAM, SRAM, Non-
volatile, Flash Memory, FRAM
o Switching Characteristics and Interconnect
Effects: Delay Time and constraints, Interconnect o Low Power CMOS Logic Circuits Low Power
parasitics, Interconnect delay calculation, Switching Design Switching Activity, Switched Capacitance,
power dissipation of CMOS inverters Adiabatic Logic Circuits

o Combinational MOS Logic Depletion Logic o BiCMOS Logic Circuits BJT, Dynamic behavior,
Circuits with nMOS loads, CMOS logic circuits, BiCMOS static behavior Switching Delay
CMOS transmission gates
o Chip I/O Circuits ESD protection, Output Circuit
o Sequential MOS Logic Bistable elements, SR Noise, On Chip Clock Generation and Distribution,
Latch, Clocked Latch with FF circuits, CMOS D- Latchup and its prevention
latch and Edge Triggered FFs
Reading Materials:
1. CMOS Digital Integrated Circuits Analysis and Design By S-Mo Kang and Y Leblebici
2. Digital Integrated Circuits: Analysis and Design By John E. Ayers
3. Digital Integrated Circuits: A Design Perspective By Anantha P. Chandrakasan,
Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017 Borivoje Nikolic, and Jan M. Rabaey
Digital IC Design

Combinational MOS Logic

Combinational MOS Logic


See Kang and Leblebici Book

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOH : Va and Vb are low

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOH : Va and Vb are low

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

Possible cases for conduction path are:

1. Va = VOH Vb = VOL

2. Va = VOL Vb = VOH

3. Va = VOH Vb = VOH

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

Possible cases for conduction path are:

1. Va = VOH Vb = VOL

2. Va = VOL Vb = VOH

3. Va = VOH Vb = VOH

For driver A ON case (i)

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

Possible cases for conduction path are:

1. Va = VOH Vb = VOL

2. Va = VOL Vb = VOH

3. Va = VOH Vb = VOH

For driver A ON case (i)

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

For each driver:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

For case (iii) when both of the drivers are ON:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

For case (iii) when both of the drivers are ON:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

For case (iii) when both of the drivers are ON:

As VA = VB= VOH you can write :

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate


Calculation of VOL : Threshold voltage of two transistors are identical

Thus,

Note that this VOL is lower that the previous two VOLs.

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

N- input depletion load NOR Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

N- input depletion load NOR Gate (Equivalent ckt.)

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate: Transients

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NOR Gate: Transients

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

Note: Substrate bias effect here


as source is not at 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

When both drivers are high (VOH):

Note: Substrate bias effect here


as source is not at 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

When both drivers are high (VOH):

Note: Substrate bias effect here


as source is not at 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

When both drivers are high (VOH):

Note: Substrate bias effect here


as source is not at 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

When both drivers are high (VOH):

If

Then since
Note: Substrate bias effect here
VOL = VDs, A + VDS,B as source is not at 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

If we assume VT,A = VT,B = VT0

The linear driver currents:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

If we assume VT,A = VT,B = VT0

The linear driver currents:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

If we assume VT,A = VT,B = VT0

The linear driver currents:

Since

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two input depletion load NAND Gate

If we assume VT,A = VT,B = VT0

The linear driver currents:

Since

Two n-MOS in series with same gate


Final drain current: voltage behaves like one nMOS with
keq= 0.5 kdriver
Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017
Digital IC Design

Combinational MOS Logic

N- input depletion load NAND Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two- input depletion load NAND Gate: Transient

When VA = VOH and


VB changes from
VOH to VOL

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

Two- input depletion load NAND Gate: Transient

When VB = VOH and


VA changes from
VOH to VOL

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Series connection

Parallel connection

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Series connection

Parallel connection

Either n-MOS network is ON and pMOS network is OFF, or the pMOS network is ON and nMOS network is OFF

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Series connection

Parallel connection

When either one or both inputs are high nMOS ON VOUT = 0V

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Series connection

Parallel connection

When either one or both inputs are high nMOS ON VOUT = 0V

When both inputs are low nMOS OFF pMOS ON VOUT = VDD

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Series connection

Parallel connection

When either one or both inputs are high nMOS ON VOUT = 0V

When both inputs are low nMOS OFF pMOS ON VOUT = VDD VOL = 0V

VOH = VDD
Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017
Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Let us have

all aspect ratios to be same

Substrate bias of pMOS is negligible.

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

Saturation

saturation

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

Saturation

saturation

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

For nMOS: Saturation

saturation

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

For nMOS: Saturation

Therefore the switching threshold:

saturation

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

For pMOS: Saturation

saturation

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

For pMOS: Saturation

As
saturation
Thus:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

The output voltage = input voltage at the switching threshold


Linear

For pMOS: Saturation

As
saturation
Thus:

Hence:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Difference between switching threshold of CMOS and NOR


inverter Linear

Saturation
For NOR:

saturation
For CMOS:

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate

Difference between switching threshold of CMOS and NOR


inverter Linear

Saturation
For NOR:

saturation
For CMOS:

for

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR Gate: Equivalent Ckt.

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NAND Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NAND Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NAND Gate

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

MOS Layout

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS Layout

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR2 Layout

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NOR2 Layout

CMOS NOR2 Stick Diagram

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017


Digital IC Design

Combinational MOS Logic

CMOS NAND2 Layout

Faculty-in-charge: Dr. Sitangshu Bhattacharya 2017

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