MOSFET

By :
Mohamed Ahmed EL.maghawry
Mohamed Adel
Yomna Mohammed
Search Content

MOSFET
What is the MOSFET?
Types of MOSFET
D MOSFET
E MOSFET
MOSFET opearation
Advancements and Limitations of the MOSFET
TO-220AB
FEATURES and DESCRIPTION
TYPICAL CHARACTERISTICS
Circuit and Structure
Circuit and Structure (For N-Channel)
 What is the MOSFET?
MOSFET - Metal-Oxide-Semiconductor Field-Effect
Transistor
The most common field effect transistor in both digital and analog circuits.
Uses channel of n or p-type semiconductor, named NMOSFET and PMOSFET, respectively.
Silicon is the main choice of semiconductor used, however SiGe is used by some chip manufact
urers.
Some other more common semiconductors such as GaAs are not useful in MOSFETs because t
hey do not form good gate oxides.
At the gate terminal is composed a of a layer of polysilicon with a thin layer of silicon dioxide
which acts as an insulator between the gate and the conducting channel.
When in operation a potential is applied between the source and gate, generating an electric fi
eld through the oxide layer, creating an inversion channel in the conducting channel, also know
n as a depletion region.
The inversion channel is of the same type as the source and drain, creating a channel in which
current can pass through. In the case of n-type as shown on the right, the charge carriers will
be holes.
By varying the potential between the gate and body, this channel in which current flows can
be altered to allow more or less or current to flow through, depending on its size.
MOSFET

Type of MOSFET

There are two types of MOSFETs:

Depletion mode MOSFET (D-MOSFET)
Operates in Depletion mode the same way as a JFET when
VGS 0
Operates in Enhancement mode like E-MOSFET when
VGS > 0

Enhancement Mode MOSFET (E-MOSFET)

Operates in Enhancement mode
IDSS = 0 until VGS > VT (threshold voltage)
MOSFET
Type of MOSFET
Depletion Mode MOSFET Construction
The Drain (D) and Source (S) leads connect to the to n-doped regions
These N-doped regions are connected via an n-channel
This n-channel is connected to the Gate (G) via a thin insulating layer of SiO 2
The n-doped material lies on a p-doped substrate that may have an additional terminal conn
ection called SS
MOSFET

Type of MOSFET
Enhancement Mode MOSFET Construction
The Drain (D) and Source (S) connect to the to n-doped regions
These n-doped regions are not connected via an n-channel without an external voltage. The
Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2.The n-doped
material lies on a p-doped substrate that may have an additional terminal connection called
SS
MOSFET

Type of MOSFET

E-MOSFET Symbols D-MOSFET Symbols

MOSFET
MOSFET operation
The MOSFET can be categorized into three separate modes when
in operation:

The first is the sub-threshold or cut-off mode:

VGS < Vt, where Vt is the thre shold voltage. In the example
shown Vt = 1V. In this mode the device is essentially off, and
in the ideal case there is no current flowing through the
device.
The second mode of operation is the linear region when
VGS > Vt and VDS < VGS Vt. Essentially, the MOSFET
operates similar to a resistor in this mode with a linear
relation between voltage and current.
Lastly, saturation mode occurs when
VGS > Vt and VDS > VGS Vt. In this mode the switch is on
and conducting, however since drain voltage is higher
than the gate voltage, part of the channel is turned off.
This mode corresponds to the region to the right of the
dotted line, which is called the pinch-off voltage.
Pinch-off occurs when the MOSFET stops operating in the linear
region and saturation occurs.
In digital circuits MOSFETS are only operated in the linear mode,
while the saturation region is reserved for analogue circuits.
MOSFET
Advancements and Limitations of the MOSFET
The explosion of digital technologies has pushed the advancement of MOSFET technologies faster
than any other Si transistor. This has happened due to the MOSFET being the prime building block
of CMOS digital logic circuits.

CMOS circuits are advantageous because they allow virtually no current to pass through and thus
consume very little power. This is done by wiring every PMOSFET with a NMOSFET in a way such
that whenever one is conducting, the other is not. This not only conserves energy but also helps to
reduce heat dissipation which otherwise would cause the circuit to fail. Overheating is very much a
concern when considering today's integrated circuits contain millions of transistors in a relatively
small space.

The MOSFET has become increasingly smaller in the last couple decades, today's MOSFETS used
in ICs have a channel length of about 100 nanometers. MOSFETs which are smaller have two main
advantages. The first is that smaller MOSFETs allow more current to pass since conceptually a
MOSFET acts a variable resistor in the on state and a shorter resistor corresponds to less resistance
and energy dissipated. Secondly, the gates are smaller which means the capacitance is lower,
decreasing the amount of time in which it takes the capacitor to charge, thus increasing switching
time and increasing processing power. Lastly, smaller MOSFETs result in more transistors per chip,
thus either increasing the processing power per chip or reducing the cost per chip.

Recently, the small size of MOSFETs has created operational problems as producing such tiny
transistors is an enormous challenge, often limited by advances in semiconductor device fabrication.
Also due the small size, the amount of voltage that can be applied has to be reduced to keep the
device stable. Due to these reduced threshold voltages, when the transistor is turned off it will still
conduct a small amount of current. This is due to a weak inversion layer which consumes power
when the transistor is off, called the sub threshold leakage. Previously this was a non-issue with
larger transistors, however in the smaller devices of today, the sub threshold leakage can result in
50% of the total power consumption of the transistor.
TO-220AB
FEATURES and DESCRIPTION
FEATURES
Dynamic dV/dt rating
Repetitive avalanche rated
175 C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
DESCRIPTION
Third generation power MOSFETs from V
ishay provide the designer with the best
combination of fast switching, ruggedized
device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally pre
ferred for all commercial-industrial applic
ations at power dissipation levels to appr
oximately 50 W. The low thermal resistan
ce and low package cost of the TO-220A
B contribute to its wide acceptance
throughout the industry.
TO-220AB
TYPICAL CHARACTERISTICS
TO-220AB

TYPICAL CHARACTERISTICS
TO-220AB

TYPICAL CHARACTERISTICS
TO-220AB

Circuit and Structure

TO-220AB

Circuit and Structure (For N-Channel)