Bipolar Junction Transistor

Joan del Espiritu

Instructor
 TRANSISTOR
• A semiconductive device used for amplification and switching applications.
• William Shockley, John Bardeen and Walter Brattain were the co-inventors of transistor at Bell
Laboratories in 1947.

BIPOLAR JUNCTION TRANSISTOR (BJT)

The term Bipolar is because two type of charges (electrons and holes) are involved in the flow of
electricity
• The term Junction is because there are two pn junctions
• There are two configurations for this device

NPN and PNP Transistors

NPN Transistor
Transistor Currents
IE = I B + I C
PNP Transistor
 Parts and Proper Bias
Parts :
1) Collector- moderately doped (collector carrier)
-the doping is between that of the emitter and the base
- largest of the three regions
2) Base - Lightly doped (control)
- controls the flow of carriers from emitter and collector
-smallest
3) Emitter - Heavily doped
- 2nd largest
- emits carrier
PROPER BIAS OF TRANSISTOR
For proper operation of the circuit
1) Emitter base junction should be forward bias
2) Collector-base junction should be reversed bias
Transistor Operation
 BJT CONFIGURATIONS
Common Base Common Collector

Input Input

IC Forward
 Current Gain
IE
IE
Typical values: 0.001 to 0.9999  1  Forward Current
IB Gain
 Relationship of β and α
IE = I B + I C
Multiply with 1/ Ic
[IE = IB + IC] 1/ Ic α = β / (β +
IE I B IC
IC I C IC
1)
1 / α = 1 + 1/ β

Example No 1. Determine βDC, IE, and αDC for a transistor

where IB = 50μA and IC = 3.65mA.
Current and Voltage Analysis

VCE = Voltage drop from collector to emitter

VCB = Voltage drop from collector to base
VBE = Voltage drop from base to emitter
IC = Current into the collector
IB = Current into the base
IE = Current out of the emitter.
. Example 2) Determine IB, IC, IE, VBE, VCE, and VCB in the
circuit. The transistor has a βDC = 150
Example 3) Sketch an ideal family of collector curves for
the circuit for IB = 10μA to 50μA in 10μA increments. βDC
= 100 and that VCE does not exceed breakdown.

VCC

. βDC = 100
Collector Characteristic Curves
Cutoff, Saturation, and The DC load line
Maximum Transistor Ratings

Ic = PD(max)/VCE

VCE = PD(max)/IC
Example 5) The transistor has the following maximum
ratings: PD(max) =800mW, VCE(max) = 15V, and IC(max) =
100mA. Determine the maximum value to whichh VCC
can be adjusted without exceeding a rating.

. βDC = 100 VCC

VBB
Derating PDmax)
Example 6) A certain transistor has PD(max) of 1W at 25°C.
The derating factor is 5mw/C° . What is the PD(max) at a
temperature of 70°C ?
 The Transistor as a switch

+VCC +VCC +VCC +VCC

RC IC = 0 RC RC IC(sat) RC

RB RB
C C
0V +VBB
IB = 0 E
E IB

a) Cutoff B) Saturation
Example 7)
a) For the transistor, what is VCE when VIN = 0V?
b) What minimum value of IB is required to saturate this transistor if βDC is
200? Neglect VCE(sat).
c) Calculate the maximum value of RB when VIN = 5V.
VCC
+ 10V

RC

RB
VIN
DC Operating point
DC Load Line
Linear Operation
Waveform Distortion
Example 1) Determine the Q-point, and find the maximum
peak value of base current for linear operation. Assume
βDC = 200.
RC

330Ω

RB
VCC
47kΩ 20V
VBB
10V
BASE BIAS
+VCC

RC RC

RB RB
VCC
+VCC – IBRB - VBE = 0
Example 2) The Base bias circuit is subjected to increase in
temperature from 25°C to 75°C. If βDC = 100 at 25°C and
150 at 75°C, determine the percent in Q-point values (I C
and VCE) over the temperature range. Neglect any change
in VBE and the effects of leakage current.
+VCC
12V

RC
560Ω

RB
100kΩ
VOLTAGE DIVIDER BIAS
+VCC

I2 + I B R1 RC IC

IB

I2 R2 RE IE
Simplified Voltage-Divider Input Resistance at the Base
+VCC +VCC +VCC

RC
R1 R1
IIN
A A +
+ VBE -
VIN
R2 R2 RIN(base) IE RE
-

a)Unloaded b) Loaded
RIN(base) = βDCRE
Analysis of Voltage-Divider Circuit

+VCC +VCC

R1
R1 RC

R2 R2 RIN(base)
RE
Example 3) Determine VCEand IC. Assume βDC = 100

+VCC

10kΩ R1 RC 1kΩ

5.6kΩ R2 RE 560Ω
 The End
Those who are enamored of practice without science are like
a pilot who goes into a ship without rudder or compass and
never has any certainty where he is going.
Practice should always be based upon a sound knowledge
of theory.

Leonardo da Vinci (1452 - 1519)

Italian artist, engineer, and inventor.
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