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Junctions
• An atom is the smallest particle of an element that retains the characteristics of that
element.
• It is made out of a nucleus and a number negatively charged electrons. Electrons
are orbiting in one or more shells around the nucleus.
• The nucleus consists of positively charged particles, called protons, and
uncharged particles called neutrons.
• Some typical elements are the Hydrogen that has only 1 electron and one proton,
the Helium that has 2 electrons, two protons and two neutrons, and the Silicon that
has 14 electrons and 14 protons.
-
-
- -
-
- - - - +14 - - -
+ + + - -
- -
-
- -
material, they arrange themselves in a
fixed pattern called a crystal. - Si Si Si -
- -
together by covalent bonds, which are
created by the valance electrons of each - Si -
atom.
-
• Covalent bonds the atoms together,
because the valance electrons of adjacent
atoms are attracted equally by the protons
in the nucleus of the atoms.
• A small number of valance electrons can
escape and become free electron, leaving
a positively charged Hole in the atom.
AELE237 Semiconductor Materials 7
AELE237 Semiconductor Materials 8
AELE237 Semiconductor Materials 9
n-Type Semiconductors
• Intrinsic (pure) semiconductor materials have
-
a low conductivity, due to the small number of
free electrons. Free
Electron
- Si - -
-
added in pure silicon, then each antimony
atom forms a covalent bond with the four - Si -
Depletion
Layer
+ + + + + + - - - - - - + + + + + - - + + - - - - -
+ + + + + + - - - - - - + + + + + - - + + - - - - -
+ p-type + - n-type - + p-type - - + + n-type -
+ + + + + + - - - - - - + + + + + - - + + - - - - -
+ + + + + + - - - - - - + + + + + - - + + - - - - -
VD
Depletion
Layer
+ + + + + - - - - -
+ + + + + - - - - -
+ p-type + - n-type -
- + + + + + - - - - - -
+ + + + + - - - - -
- VD
-
V < VD
+ -
- - - - - -
+ + + + - - - - p-type n-type
- - - - + + + + Rp + - Rn
p-type n-type
- - - - - + -
+ + +
-
+ + + + - - - -
-
-
VD
-
-
V >= V D
-
- - - - - + - - - - - - + -
• If the source voltage is greater than the depletion voltage, then the depletion layer is
eliminated, and a large number of electrons gain enough energy to become valance
electrons. Thus a large current flows through the pn-junction.
• In this case the pn-junction behaves like a resistance (Rp + Rn) with a voltage
source (VD).
• The bulk resistance (Rp + Rn) is very low (few ohms), thus to avoid damaging the
pn-junction, a liming resistor is usually connected in series.
• The depletion voltage for silicon pn-junctions is 0.7V and for germanium 0.3V.
-
VD
-
- +
- -
• If the source voltage is connected in such a way so that the negative terminal is connected on
the p-region and the positive on the n-region, then the pn-junction is reversed biased.
• In this case the source voltage widens the depletion layer. Only a very small currents flows the
circuit due to the small number of minority curriers in the pn-junction.
• If the source voltage increases further, then the depletion layer widens more, creating a gap
between the p-region and the n-region, that behaves as a capacitance.
• Further increase in the source voltage will lead to a state known as the avalanche
breakdown, where a large reverse current flows through the circuit.
VD
AELE237 Semiconductor Materials 17
Biasing the Junction Diode:- Forward Bias (V < VD)
• If a voltage source is connected to a pn- Depletion
Layer
junction with the positive terminal + + + + + - - - - -
connected on the p-region and the + + + + + - - - - -
+ p-type + - n-type -
negative on the n-region then the - + + + + + - - - - - -
junction is forward biased. + + + + + - - - - -
-
VD
-
source pushes the holes of the p-region
V < VD
towards the n-region, while the negative - - - + -
- - -
terminal pushes the electrons towards
the p-region.
I (mA)
• This reduces the width of the depletion
layer. If the source voltage is less than
the depletion voltage, then the width of
the depletion layer is only reduced, not
eliminated. Thus, only a very small
current flows through the circuit.
V (V)
+ + + + - - - - p-type n-type
- - - - + + + + Rp + - Rn
p-type n-type
- - - - - + -
+ + +
-
+ + + + - - - -
-
-
VD
-
-
V >= V D
-
- - - - - + - - - - - - + -
• If the source voltage is greater than the depletion voltage, then the depletion layer is
eliminated, and a large number of electrons gain enough energy to become valance
electrons. Thus a large current flows through the pn-junction.
• In this case the pn-junction behaves like a resistance (Rp + Rn) with a voltage
source (VD).
• The bulk resistance (Rp + Rn) is very low (few ohms), thus to avoid damaging the
pn-junction, a liming resistor is usually connected in series.
• The depletion voltage for silicon pn-junctions is 0.7V and for germanium 0.3V.
V (V)
0.7V
V (V)
0.7V
-
VD
-
- +
- -
• If the source voltage is connected in such a way so that the negative terminal is
connected on the p-region and the positive on the n-region, then the pn-junction is
reversed biased.
• In this case the source voltage widens the depletion layer. Only a very small currents
flow in the circuit due to the small number of minority curriers in the pn-junction.
• If the source voltage increases further, then the depletion layer widens more,
creating a gap between the p-region and the n-region, that behaves as a
capacitance.
• Further increase in the source voltage will lead to a state known as the avalanche
breakdown, where a large reverse current flows through the circuit.