You are on page 1of 24

Diode Equation and Models

 The general equation linking the diode


current I to the applied voltage V is:

  eV  
I  Io exp   1
  nkT  
Diode Equation and Models
• Here:
• Io is the reverse saturation current.
• k is Boltzmann's constant= 1.38 x 10-23 JK-1.
• T is the working temperature in Kelvin.
• e is the magnitude of the electronic charge.
• n is called the ideality factor. (n= 1 from
theory. From experiments on silicon diodes n=
2 at low current and 1 for large currents).
Diode Equation and Models
• As an exercise satisfy yourself that this explains
the facts discussed in the Semiconductor Diodes
section of the module. (The ‘exponential’ term
corresponds to majority carrier flow whilst the ‘–
1’ term relates to the ‘reverse saturation’
component)
• You can now tackle questions 1-4 on Example
Sheet1!
Diode Equation and Models
• By plotting out this equation on a ‘practical
scale’ we see that to a good approximation

  eV 
I  Io exp 
  nkT 
Diode Equation and Models
• Diode eqn
Diode Equation and Models
• An ideal diode would show an abrupt
transition from perfectly conducting (diode
short circuit) to perfectly non-conducting
(diode open circuit) states at 0V
I

V
Diode Equation and Models
• It acts as switch since
• In the ON state it is a short and in the OFF
state it is open circuit

OFF ON
Smith/Dorf symbol
V for ideal diode
Diode Equation and Models
• An silicon diode approximates this ideal
but the transition from conducting to non-
conducting circuit states is at around 0.6V
because of the barrier potential. This
voltage is called the cut-in voltage
I

0.6 V
Diode Equation and Models
• Experiment
Diode Equation and Models
• A closer approximation to the diode I-V
equation (experiment) also includes the
bulk resistance. This gives the diode’s I-V
curve a finite slope above cut-in.
I

0.6 V
Diode Equation and Models
• Diodes formed in other materials have
different cut-in voltages.
• Diodes breakdown for large reverse bias
(Breakdown voltage)
Diode Equation and Models
• We are now in a position to draw some models
that represent diode behaviour.
• We can use these models instead of the diode
equation in circuit analysis
• Later on in the Module we will be developing
similar models (or equivalent circuits) to represent
the behaviour of transistors when they are used as
linear amplifiers.
Diode Equation and Models
• Diode circuit symbol

Anode Cathode
p n
Diode Equation and Models
• BS3939, IEC symbol (For information only,
Smith and Dorf’s symbols will be used in
the module)
Diode Equation and Models
• In forward bias the equivalent circuit is a
forward bias drop (Vc ~ 0.6V) in series
with a small (forward) resistance.
+ - I

0.6 V
VC Rf
Diode Equation and Models
• In many cases Rf can be ignored.

0.6V V
0.6
Diode Equation and Models
• In reverse bias (strictly in the ‘off’ state
below Vc) the diode can be represented by a
very large resistor Rr.
• We shall assume Rr. to be infinitely large so
that the piecewise linear model for the
diode is:
Diode Equation and Models
• Incremental Diode Model

• Another important principle that we will need


for transistor analysis is that of the‘incremental
modelling’ of a non-linear device.
• Basically this assumes the diode I-V curve is
linear for small variations in I and V about some
operating or bias point. (Also known as the ‘Q’
or quiescent point.)
Diode Equation and Models
• We introduce important notation used
throughout the module. As noted, the
(small) a.c. signal sits on top of a d.c. bias
level.
• Lower-case symbols are used for the time
varying signals (i, v).
• Upper-case symbols are used for the d.c.
bias levels (I, V).
Diode Equation and Models
I, i
I, i i
Q
t

V, v
VQ
V, v

v
t
Diode Equation and Models
• The diode is biased to operate about a point
Q on the I-V curve
• The small a.c. signal is superimposed on
this bias.
• The diode can then be modelled by a
resistance equal to the inverse slope of the
tangent to the bias point (Linear
approximation to diode curve)
Diode Equation and Models
Diode Equation and Models
• We will, in the examples class, use the diode
equation to show that, for an ideality factor of 1,
the dynamic (small signal) resistance is:

dV 1 25
rD (Ohms)   
dI slope at Q IQ (mA)
Zener Diode
• This is simply a diode whose breakdown
voltage is controlled to be a specific value.
• It finds wide use in limiting and voltage
regulator circuits (see diode application
section of the module) 

You might also like