Professional Documents
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• Micro-mechanics:
Resonant Gate transistor
• Micro-Electronics:
IC fabrication
In OFC
There are four main domains:
• Amplifiers
• Switches or Optical Cross Connectors (OXC)
– 2x2, 4x4, NxN
• Variable Optical Attenuators (VOA)
• Filters
Overview of Silicon on Insulator (SOI)
Technology
• Polycrystalline silicon on top of the buried SiO2
layer (100mm -2μm -75 μm)
• Photolithography: Patterning and depositing
• DRIE: narrow structures of about 2μm to 5μm
can be achieved with very smooth sidewalls.
• The buried SiO2 serves as etch stop for DIRE –
as etching rate is different in different directions
• The resist is removed by oxygen plasma
etching.
• Buried Sio2 is removed by etching with 50%
conc HF acid
• SiO2 pedestals remains – serves as insulators
between different electrodes
• Deposition of Gold for conductivity and proper
reflection of mirror.
2x2 optical switch
• Two input two output fibers in 75 um
high grove
• Their endfaces all meet at one point,
where a movable gold-coated mirror is
located. This way, the light of either one
of the input fibers can be switched to
either one of the output fibers
• Refractive index matching fluid: reduces
two effects: first the Index step between the
fiber endfaces and the ambient and Secondly
the divergence of the freely propagating light;
hermetically sealed