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Fiber splice 1 2 3
TRANSMISSION MEDIUM
n-type material
p-type material
Table 6-1: Light-Emitting Semiconductors Material Wavelength Range Bandgap Energy (m) (eV) AlGaInP GaAs AlGaAs InGaAs InGaAsP 1.82 - 1.94 0.61 - Table 6-1: Light-Emitting Semiconductors 0.68 0.9 Material Wavelength 1.4 Range Bandgap Energy (m) - 1.55 (eV) 1.4 0.8 - 0.9 0.95 1.0 - 1.3 AlGaInP 1.82 - 1.94 0.61 - 0.68 1.24 0.73 1.4 0.9 - 1.7 0.9 - 1.35 GaAs AlGaAs InGaAs InGaAsP 0.8 - 0.9 1.0 - 1.3 0.9 - 1.7 1.4 - 1.55 0.95 - 1.24 0.73 - 1.35
Forward Biased Diodes: holes and electrons recombine in some group III - V compounds, a few II - VI compounds, the electrons and holes recombine and produce radiation.
a s
a s
N
carriers are not confined light is not confined inefficient. Heterojunctions: the carriers are confined the light is also confined Historically, single hets, then double hets.
Heterojunctions:
Double-heterostructure configuration
Types of LEDs
Surface Emitting LEDs Edge Emitting LEDs
Coupling lens used to increase efficiency. Short optical Links with Large NA fibers. Data rates less than 20 Mbps.
LED Characteristics
Optical Output Power Output Spectrum Modulation Bandwidth
1. Ideal light output against current characteristics for an LED 2. Light output of SLEDs against current 3. Light output of ELEDs against current
SLED ELED
Temperature
Modulation Bandwidth
Frequency
Advantages of LEDs
Easier Fabrication Lower Cost Simpler Temperature circuit design Lower temperature dependence
Lasers
Basic Steps required to form a laser beam : There are generally 3 processes: Absorption Spontaneous emission Stimulated emission
2)Spontaneous Emission
After the absorption process the electrons at the higher energy level are in an excited state. Now if there is no incident light ,they fall back to the lower energy level during which they give up the energy acquired during absorption in the form of radiation.The spontaneous emission process is as shown in the figure below:
3)Stimulated Emission
Once the external photon strikes to this excited atom,this leaves its position from the higher energy level and & it will emit the photon. Thus 2 photons are available at the output,one which is striking on the atom and other coming out because of excited emission of two photons and the light amplification takes place. These two photons are in same phase and traveling in the same direction.
Types of Lasers
Semiconductor Laser (used in advanced optical fiber communication) Solid State Laser (used in atmospheric and free space links) Gas Lasers(used in atmospheric and free space links)
In solid state lasers the active area is created by so called Laser active atoms. These active atoms are stimulated by injection of powerful light which is called optical pumping. By employing optical pumping electrons located in the ground level are pumped to an upper level with high energy. Laser operation is finally achieved by stimulated emission
Gas Lasers
In Gas lasers gas atoms or gas molecules are employed to produce the active material. Gas Lasers provides the best results as far as spatial and spectral quality of the laser light beam are concerned.
1550
P(nm)
Packaging
Packaging
Packaging
Packaging
Advantages of Laser
High Modulation rates Narrower Spectral Width Less dispersion induced signal distortion Higher fiber coupling efficiency Greater transmission distance
Optical Detectors
Types of Photodiodes
PN Photodiode P-I-N Photodiode Avalanche Photodiode Phototransistor Photo Darlington Pair
PN Photodiode
To induce material to conduct current , one needs to populate the conduction band with electrons. The bandgap of Si is 1.17ev and the bandgap of Ge is .775ev respectively. For excitation of electron at the conduction band Ep=hf=hc/P>Eg
PN Photodiode
Ep p n
Applying external voltage (Reverse bias) enhances the flow of electrons and holes
Disadvantages of PN photodiode
Narrow depletion Region So the need is to increase the width of the depletion region without manipulating unnecessarily the value of the reverse bias voltage.
P-I-N photodiode
A thick, lightly doped intrinsic layer sandwiched between thin p and n regions.
Metal Contacts
Avalanche Photodiode
Drawbacks of P-I-N photodiode need of an amplifier to magnify the photocurrent produced by the photodiode.
P+
N+
APD
The quantum efficiency of the APD is M times larger than that of a P-I-N photo diode. R(APD)=M x R(PIN) M depends upon 1 Accelerating voltage 2 Thickness of the gain region 3 Ratio of electrons to holes participating in the ionization process. M ranges from 10 to 500.
APD
Photo Transistor
BIp
Ip
Ip
Shot Noise: Deviation of the actual number of electrons from the average numbers is known as shot noise. Thermal Noise The deviation of an instantaneous number of electrons from their average value because of temperature change is called Thermal Noise. Thermal Noise is often called Johnson noise .
Dark current Noise The dark current noise arises due to dark current which flows in the circuit when the photodiode is in unilluminated environment under bias condition. The magnitude of this current depends on the Operating temperature. Biased voltage Type of detectors
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