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ANDHRA PRADESH
Name : P.Kumar Babu.
Designation : Lecturer in E.C.E.
Branch : Electronics & commu.
Engg.
Institute : G.P.W, Suryapet.
Semester/Year : III Sem
subject : Electronics-I.
Subject code : EE-305.
Topic : Semiconductor Devices.
Duration : 50 min.
Sub.Topic : working of PN-junction diode with no
bias, forward bias and reverse bias
Teaching Aids : PPT, Figures, Animations.
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RECAP
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• If temperature increases minority carriers increases or
not?
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OBJECTIVES:
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A PN-Junction when just formed
Figure 4.1
P-TYPE N-TYPE
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Formation of depletion Region
Figure 4.2
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Transition region
−− ++
−− ++
P −−
−−
++
++
N
−− ++
Vn
V0
Vp
Figure 4.3
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FORMATION OF PN-JUNCTION DIODE
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UN-Bias Example
P-N Junction
(Depletion Region / Offset voltage = 0.7V or 0.3V)
-
+
--
“p” ++ “n”
-
+
--
(positive charges +++ (negative charges
-
Dominate) ++ dominate)
--
+++
Figure 4.4
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PN-Junction with no Bias
• Diffusion of holes (from p region to N region ) and
electrons (from N region to P region) takes place.
V1 V2
P1 P2
DIODE SYMBOL
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• Arrow indicates direction of current and line indicates the
junction
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Summary
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QUIZ
2. In an unbiased pn-junction the junction current at
equilibrium is
(b) Due to diffusion minority carriers only
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In a semiconductor diode, the barrier potential offer
opposition to only.
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3.The potential barrier at a PN-junction is due to the
charges on either side of the junction.These charges are
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Frequently asked Questions
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