You are on page 1of 18

DEPARTMENT OF TECHNICAL EDUCATION

ANDHRA PRADESH
Name : P.Kumar Babu.
Designation : Lecturer in E.C.E.
Branch : Electronics & commu.
Engg.
Institute : G.P.W, Suryapet.
Semester/Year : III Sem
subject : Electronics-I.
Subject code : EE-305.
Topic : Semiconductor Devices.
Duration : 50 min.
Sub.Topic : working of PN-junction diode with no
bias, forward bias and reverse bias
Teaching Aids : PPT, Figures, Animations.
EE305.14 1
RECAP

• What is a P-type material and N-type materials.

• In N-type semiconductor what are majority carriers and


what are minority carriers.

• What is main difference between drift and diffusion


currents.

EE305.14 2
• If temperature increases minority carriers increases or
not?

• What is basic difference between intrinsic and extrinsic


semiconductors.

EE305.14 3
OBJECTIVES:

Upon the completion of this topic the student will be able to


know

How the PN-junction diode is formed.

Working of PN-junction diode with out bias.

EE305.14 4
A PN-Junction when just formed
Figure 4.1

P-TYPE N-TYPE

EE305.14 5
Formation of depletion Region
Figure 4.2

EE305.14 6
Transition region
−− ++
−− ++

P −−
−−
++
++
N
−− ++

Vn
V0
Vp
Figure 4.3
EE305.14 7
FORMATION OF PN-JUNCTION DIODE

• Combining P-type layer and N-type layer forms a pn-


junction.

• Fabrication of PN-junction is done either by epitaxial


growth or alloying techniques.

• Two pieces are joined to form pn-junction at the junction


free electrons to diffuse over the p-side and holes to the
n-side.

• The free electrons move across the junction from n-type


to p-type positive donor ions are uncovered.
EE305.14 8
• A positive charge is built on the n-side of junction.

• The free electrons cross the junction and uncover the


negative acceptor ions by filling holes.

• number of donor and acceptor ions are uncovered


further diffusion is prevented.

• A barrier is setup against further movement of charge


carriers. The barrier potential is 0.3v for Ge and 0.7v for
Si

EE305.14 9
UN-Bias Example

P-N Junction
(Depletion Region / Offset voltage = 0.7V or 0.3V)
-
+
--
“p” ++ “n”
-
+
--
(positive charges +++ (negative charges
-
Dominate) ++ dominate)
--
+++

Figure 4.4

EE305.14 10
PN-Junction with no Bias
• Diffusion of holes (from p region to N region ) and
electrons (from N region to P region) takes place.

• The diffusion occurs for a very short time due to


attraction of opposite charge carriers.

• After a few recombination's of holes and electrons a


restraining force developed called barrier is set up
automatically.

• Under no bias condition there is no sufficient voltage for ions


to cross the junction which is greater than barrier potential.
Diode

V1 V2
P1 P2
DIODE SYMBOL

•V >V , current current


1 2
• P1 > P2,

• V1 < V2 , no current • P1 < P2, no current


Figure 4.5

EE305.14 12
• Arrow indicates direction of current and line indicates the
junction

• V1 is greater than V2 diode allows the current to flow.

• V1 is less than V2 diode does not allow the current.

EE305.14 13
Summary

We have discussed about

• Formation of junction in PN-junction diode.

• What is a barrier potential.

• How the PN-junction diode behaves under unbias.

EE305.14 14
QUIZ
2. In an unbiased pn-junction the junction current at
equilibrium is
(b) Due to diffusion minority carriers only

(b) Due to diffusion of majority carriers only

(a) zero, because equal but opposite carriers are


crossing the junction

(a) zero, because no charges are crossing the junction

EE305.14 15
In a semiconductor diode, the barrier potential offer
opposition to only.

(a) Minority carriers in both regions

(b) Free electrons in N- region

(c) Holes in P-region

(d) Majority carriers in both regions

EE305.14 16
3.The potential barrier at a PN-junction is due to the
charges on either side of the junction.These charges are

(a) Minority carriers

(b) Majority carriers

(c) Both minority and majority


carriers

(d) Fixed donor and acceptor ions

EE305.14 17
Frequently asked Questions

5. What is a PN-junction. explain the formation of potential


barrier.

2. Discuss the behavior of a PN-junction under unbiasing.

3. Explain the formation of PN-junction.

EE305.14 18

You might also like